Spincup with a wafer backside deposition reduction apparatus

Claim 2

A spincup for use with a chuck for supporting a wafer, comprising: a base having an opening for accommodating the chuck; a wall circumscribing the base and enclosing an ambient region; a particle guard, the particle guard contacting the base of the spincup and circumscribing the opening, wherein when the wafer and chuck are present, the particle guard, a backside of the wafer, and the chuck define a wafer backside region, and wherein the particle guard includes an exterior surface; a first exhaust channel isolated from the ambient region and coupled to the wafer backside region to exhaust the wafer backside region; and a shroud having a first surface for contacting the base of the spincup and a second surface for contacting the exterior surface of the particle guard; wherein the shroud, the particle guard and the spincup base define a shrouded region, and the first exhaust channel includes the shrouded region.

Claim 3

The spincup in claim 1, wherein the particle guard further includes an orifice extending from the exterior surface into the wafer backside region, and wherein the first exhaust channel further includes the orifice and an exhaust port for connecting a vacuum generator to the exhaust channel.

Claim 4

A spincup as in claim 2, wherein the shroud is polyvinyl chloride.

Claim 5

A spincup as in claim 2, wherein the shroud is an integral part of the spincup.

Claim 6

A spincup as in claim 2, wherein the shroud includes a sidewall and an extension.

Claim 7

A spincup as in claim 1, wherein the particle guard includes an exterior surface and an orifice extending from the exterior surface into the wafer backside region, the spincup further comprising: an exhaust port for connecting a vacuum generator to the first exhaust channel; and an exhaust tube having a first end coupled to the exhaust port and a second end coupled to the orifice; wherein the first exhaust channel includes the exhaust tube, the exhaust port, and the orifice.

Claim 8

A spincup as in claim 6 wherein the exhaust tube is made of poly-etrafluoroethylene.

Claim 9

The spincup in claim 1 further comprising a second exhaust channel disposed through the spincup and coupled to the ambient region.

Claim 10

The spincup in claim 1 wherein the first exhaust channel includes an exhaust port extending from a backside of the base into the wafer backside region, and the exhaust port is coupled to a vacuum generator.

Claim 11

The spincup in claim 1 further comprising a plurality of exhaust channels coupled to the wafer backside region wherein each of the exhaust channels independently exhaust the wafer backside region.

Claim 12

A spincup assembly comprising: a spincup including a base and a wall circumscribing the base and enclosing an ambient region; a rotatable chuck for supporting a wafer in the spincup; a particle guard, the particle guard contacting the base of the spincup and circumscribing the chuck, wherein the particle guard, the base of the spincup between the particle guard and the chuck, and the chuck define a wafer backside region, and a top portion of the particle guard and an adjacent portion of the chuck define a particle inlet to the wafer backside region; an exhaust channel coupled to the wafer backside region to exhaust the wafer backside region; and an exhaust manifold shroud having a first surface attached to the base of the spincup and a second surface attached to the particle guard; wherein the exhaust manifold shroud, the particle guard and the base of the spincup define a shrouded region and the exhaust manifold shroud separates the ambient region from the shrouded region to prevent particles in the ambient region from directly entering the shrouded region, and the exhaust channel includes the shrouded region.

Claim 13

A spincup assembly comprising: a spincup including a base and a wall circumscribing the base and enclosing an ambient region; a rotatable chuck for supporting a wafer in the spincup; a particle guard, the particle guard contacting the base of the spincup and circumscribing the chuck, wherein the particle guard, the base of the spincup between the particle guard and the chuck, and the chuck define a wafer backside region, and a top portion of the particle guard and an adjacent portion of the chuck define a particle inlet to the wafer backside region; an exhaust channel coupled to the wafer backside region to exhaust the wafer backside region; and an exhaust manifold shroud having a first surface attached to the base of the spincup and a second surface attached to the particle guard; wherein the exhaust manifold shroud, the particle guard and the base of the spincup define a shrouded region and the exhaust manifold shroud separates the ambient region from the shrouded region to prevent particles in the ambient region from directly entering the shrouded region, and the exhaust channel includes the shrouded region.

Claim 14

A spincup assembly as in claim 11, wherein the particle guard includes a first surface, a second surface, and a drain hole extending into the wafer backside region, the spincup assembly further comprising: an exhaust port for connecting a vacuum generator to the exhaust channel for creating a negative pressure differential between the exhaust port and the wafer backside region;

Claim 15

A spincup assembly as in claim 12, wherein the exhaust manifold shroud is polyvinyl chloride.

Claim 16

A spincup assembly as in claim 11, wherein the particle guard includes a first surface, a second surface, and a drain hole extending into the wafer backside region, the spincup assembly further comprising: an exhaust port for connecting a vacuum generator to the exhaust channel; and an exhaust tube having a first end coupled to the exhaust port and a second end coupled to the drain hole; wherein the exhaust channel includes the exhaust tube, the exhaust port, and the drain hole.

Claim 17

A spincup assembly as in claim 14 wherein the exhaust tube is made of polytetrafluoroethylene.

Claim 18

A developer machine having a spincup, the spincup including a wafer backside deposition reduction apparatus for reducing particle deposition on the backside of a wafer during developer deposition, the developer machine comprising: a first heating process station for heating the wafer; a cooling process station for cooling the wafer; a spincup processing station for applying developer to the wafer, the spincup processing station having a chuck for supporting a wafer in the spincup, and a spincup having a base, a wall circumscribing the base and enclosing an ambient region, a particle guard, the particle guard contacting the base of the spincup and circumscribing the chuck, wherein the particle guard, the base of the spincup between the particle guard and the chuck, and the chuck define a wafer backside region, an exhaust channel isolated from the ambient region and coupled to the wafer backside region to exhaust the wafer backside region, and an exhaust manifold shroud having a first surface attached to the base of the spincup and a second surface attached to the particle guard; wherein the exhaust manifold shroud, the particle guard and the base of the spincup define a shrouded region, and the exhaust manifold shroud separates the ambient region from the shrouded region to prevent particles in the ambient region from directly entering the shrouded region, and wherein the exhaust channel further includes the shrouded region; a second heating process station for heating the wafer; and a transport means for transporting the wafer between all of the process and processing stations.

Claim 19

A developer machine having a spincup, the spincup including a wafer backside deposition reduction apparatus for reducing particle deposition on the backside of a wafer during developer deposition, the developer machine comprising: a first heating process station for heating the wafer; a cooling process station for cooling the wafer; a spincup processing station for applying developer to the wafer, the spincup processing station having a chuck for supporting a wafer in the spincup, and a spincup having a base, a wall circumscribing the base and enclosing an ambient region, a particle guard, the particle guard contacting the base of the spincup and circumscribing the chuck, wherein the particle guard, the base of the spincup between the particle guard and the chuck, and the chuck define a wafer backside region, an exhaust channel isolated from the ambient region and coupled to the wafer backside region to exhaust the wafer backside region, and an exhaust manifold shroud having a first surface attached to the base of the spincup and a second surface attached to the particle guard; wherein the exhaust manifold shroud, the particle guard and the base of the spincup define a shrouded region, and the exhaust manifold shroud separates the ambient region from the shrouded region to prevent particles in the ambient region from directly entering the shrouded region, and wherein the exhaust channel further includes the shrouded region; a second heating process station for heating the wafer; and a transport means for transporting the wafer between all of the process and processing stations.