Patent US5528209A successfully refreshed from Google Patents.
US5528209A
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Monolithic microwave integrated circuit and method
Assignee: The AT&T MVPD Group LLC
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Filing: 1995-04-27
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Granted: 1996-06-18
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Expires: 2015-04-27
Abstract
Abstract A monolithic microwave integrated circuit is formed by positioning a distributed, transmission-line network over a microwave-device structure. The ground plane of the transmission-line network adjoins an interconnect system of the microwave-device structure and signal lines of the transmission-line network are adapted to communicate with the microwave-device structure through orifices of the ground plane. The invention facilitates the use of low-cost silicon-based transistors in monolithic microwave integrated circuits.
Inventors
- 👤 Perry A. Macdonald
- 👤 Lawrence E. Larson
- 👤 Michael G. Case
- 👤 Mehran Matloubian
- 👤 Mary Y. Chen
- 👤 David B. Rensch
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:48
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10W; H10W44/00; H10W44/20; H10W44/203; H10W44/216; H10W44/226; H10W44/251
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
184 words
A monolithic microwave integrated circuit, comprising: a microwave-device structure which has; a) a semiconductor substrate, b) a plurality of microwave devices that are positioned on said substrate, and c) an interconnect system which is positioned on said substrate and configured to electrically interconnect said microwave devices; and a distributed, transmission-line network configured to conduct microwave signals, said transmission-line network having: a) a ground plane; b) a plurality of microwave signal lines spaced above said ground plane; and c) a transmission-line dielectric between said signal lines and said ground plane; wherein: said transmission-line network is positioned on said interconnect system and communicates through said ground plane with predetermined devices of said microwave-device structure; the spacing between a portion of said signal lines and said ground plane is locally reduced to form a microwave capacitor; said ground plane defines an aperture and one of said signal lines communicates with said microwave-device structure through said aperture; and said transmission-line dielectric includes a first layer of benzocyclobutene and a second layer of silicon nitride with said second layer positioned between said signal line portion and said ground plane.
Claim 2
Dependent Claim
184 words
A monolithic microwave integrated circuit, comprising: a microwave-device structure which has; a) a semiconductor substrate, b) a plurality of microwave devices that are positioned on said substrate, and c) an interconnect system which is positioned on said substrate and configured to electrically interconnect said microwave devices; and a distributed, transmission-line network configured to conduct microwave signals, said transmission-line network having: a) a ground plane; b) a plurality of microwave signal lines spaced above said ground plane; and c) a transmission-line dielectric between said signal lines and said ground plane; wherein: said transmission-line network is positioned on said interconnect system and communicates through said ground plane with predetermined devices of said microwave-device structure; the spacing between a portion of said signal lines and said ground plane is locally reduced to form a microwave capacitor; said ground plane defines an aperture and one of said signal lines communicates with said microwave-device structure through said aperture; and said transmission-line dielectric includes a first layer of benzocyclobutene and a second layer of silicon nitride with said second layer positioned between said signal line portion and said ground plane.
Claim 3
Dependent Claim
29 words
The monolithic microwave integrated circuit of claim 1, wherein the spacing between one of said signal lines and said ground plane is locally eliminated to form a microwave short.
Claim 4
Dependent Claim
30 words
The monolithic microwave integrated circuit of claim 1, wherein said interconnect system includes: at least one layer of conductive members; and an interconnect dielectric arranged to insulate said conductive members.
Claim 5
Dependent Claim
33 words
The monolithic microwave integrated circuit of claim 1, wherein: said semiconductor substrate is comprised of silicon; and said microwave devices include at least one microwave transistor configured in a silicon germanium/silicon semiconductor system.
Claim 6
Dependent Claim
116 words
A monolithic microwave integrated circuit, comprising: a silicon semiconductor substrate; a plurality of microwave devices carried on said substrate with said devices including a microwave transistor configured in a silicon germanium/silicon semiconductor system; an interconnect system which is carried on said substrate and configured to electrically interconnect said microwave devices; and a distributed, transmission-line network configured to distribute microwave signals, said network having: a) a ground plane positioned over said interconnect system with said ground plane defining an aperture; b) a transmission-line dielectric positioned over said ground plane; and c) at least one signal line which is positioned over said transmission-line dielectric and communicates through said dielectric and said aperture with one of said microwave devices.
Claim 7
Dependent Claim
116 words
A monolithic microwave integrated circuit, comprising: a silicon semiconductor substrate; a plurality of microwave devices carried on said substrate with said devices including a microwave transistor configured in a silicon germanium/silicon semiconductor system; an interconnect system which is carried on said substrate and configured to electrically interconnect said microwave devices; and a distributed, transmission-line network configured to distribute microwave signals, said network having: a) a ground plane positioned over said interconnect system with said ground plane defining an aperture; b) a transmission-line dielectric positioned over said ground plane; and c) at least one signal line which is positioned over said transmission-line dielectric and communicates through said dielectric and said aperture with one of said microwave devices.
Claim 8
Dependent Claim
14 words
The monolithic microwave integrated circuit of claim 5, wherein said transmission-line dielectric comprises benzocyclobutene.
Claim 9
Dependent Claim
30 words
The monolithic microwave integrated circuit of claim 5, wherein said interconnect system includes: at least one layer of conductive members; and an interconnect dielectric arranged to insulate said conductive members.
Claim 10
Dependent Claim
61 words
The monolithic microwave integrated circuit of claim 5, wherein: the spacing between a portion of said signal lines and said ground plane is locally reduced to form a microwave capacitor; and said transmission-line dielectric includes a first layer of benzocyclobutene and a second layer of silicon nitride with said second layer positioned between said signal line portion and said ground plane.
Claim 11
Dependent Claim
61 words
The monolithic microwave integrated circuit of claim 5, wherein: the spacing between a portion of said signal lines and said ground plane is locally reduced to form a microwave capacitor; and said transmission-line dielectric includes a first layer of benzocyclobutene and a second layer of silicon dioxide with said second layer positioned between said signal line portion and said ground plane.
Claim 12
Dependent Claim
171 words
A monolithic microwave integrated circuit, comprising: a silicon semiconductor substrate; a plurality of microwave devices carried on said substrate with said devices including a microwave transistor configured in a silicon semiconductor system; an interconnect system which is carried on said substrate and configured to electrically interconnect said microwave devices; and a distributed, transmission-line network having: a) a ground plane positioned over said interconnect system with said ground plane defining an aperture; b) a transmission-line dielectric positioned over said ground plane; c) at least one signal line which is positioned over said transmission-line dielectric and communicates through said dielectric and said aperture with one of said microwave devices; and; a capacitor which is formed between a portion of said signal lines and said ground plane; wherein said transmission-line dielectric includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant which is greater than said first dielectric constant with said second dielectric layer positioned between said signal line portion and said ground plane.
Claim 13
Dependent Claim
171 words
A monolithic microwave integrated circuit, comprising: a silicon semiconductor substrate; a plurality of microwave devices carried on said substrate with said devices including a microwave transistor configured in a silicon semiconductor system; an interconnect system which is carried on said substrate and configured to electrically interconnect said microwave devices; and a distributed, transmission-line network having: a) a ground plane positioned over said interconnect system with said ground plane defining an aperture; b) a transmission-line dielectric positioned over said ground plane; c) at least one signal line which is positioned over said transmission-line dielectric and communicates through said dielectric and said aperture with one of said microwave devices; and; a capacitor which is formed between a portion of said signal lines and said ground plane; wherein said transmission-line dielectric includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant which is greater than said first dielectric constant with said second dielectric layer positioned between said signal line portion and said ground plane.
Claim 14
Dependent Claim
15 words
The monolithic microwave integrated circuit of claim 10, wherein said first dielectric layer comprises benzocyclobutene.
Claim 15
Dependent Claim
16 words
The monolithic microwave integrated circuit of claim 10, wherein said second dielectric layer comprises silicon nitride.
Claim 16
Dependent Claim
16 words
The monolithic microwave integrated circuit of claim 10, wherein said second dielectric layer comprises silicon dioxide.
References Cited (Backward Citations)
US5202752A
Cited
US5352998A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-18 | 1999-12-18 | 2000-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-18 | 2003-12-18 | 2004-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-18 | 2007-12-18 | 2008-06-18 | $7700.00 | Window Closed / Lapsed |