Abstract On a silicon substrate, a silicon oxide layer, a first platinum layer, a dielectric film and a second platinum layer are formed, and then the second platinum layer and the dielectric film are dry etched, via a resist layer, in a 1-5 Pa low pressure region with a mixed gas of HBr and O 2 as the etching gas. As soon as the first platinum layer is exposed, the unetched portion of dielectric film is etched off in a 5-50 Pa high pressure region, and then the first platinum layer is dry etched again in the low pressure region to form a capacitor consisting of a top electrode, a capacitance insulation layer and a bottom electrode in a semiconductor integrated circuit chip. Using this manufacturing method prevents the deterioration in definition caused by the use of a thick resist and the operation failure of circuit elements such as transistors due to over etching on the insulation layer.
Inventors
👤 Shoji Matsumoto
👤 Yoshihisa Nagano
👤 Yasuhiro Shimada
👤 Yasufumi Izutsu
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-10 01:35
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
95 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulation layer, a first metal layer, a dielectric film, and a second metal layer on a substrate having circuit elements formed thereon; dry etching said second metal layer and said dielectric film to form a top electrode and a capacitance insulation film, wherein at least this dry etching step is performed using mixed gas containing hydrogen halide and oxygen; and dry etching said first metal layer to form a bottom electrode after dry etching said second metal layer and said dielectric film.
Claim 2
Independent Claim
95 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulation layer, a first metal layer, a dielectric film, and a second metal layer on a substrate having circuit elements formed thereon; dry etching said second metal layer and said dielectric film to form a top electrode and a capacitance insulation film, wherein at least this dry etching step is performed using mixed gas containing hydrogen halide and oxygen; and dry etching said first metal layer to form a bottom electrode after dry etching said second metal layer and said dielectric film.
Claim 3
Dependent Claim
37 words
A method of manufacturing a semiconductor device according to claim 1, wherein the percentage of oxygen in the etching gas of hydrogen halide and oxygen is about 10% to about 35% of the total etching gas flow.
Claim 4
Dependent Claim
20 words
A method of manufacturing a semiconductor device according to claim 1 or claim 2, wherein the hydrogen halide is HBr.