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US5527626A
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Magneto-resistance device, and magnetic head comprising such a device
Assignee: OnStream Inc
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Filing: 1996-11-22
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Granted: 1996-06-18
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Expires: 2016-11-22
Abstract
Abstract A magneto-resistance device comprises a stacked structure, which stacked structure has a non-conducting substrate having a surface on which a multilayer structure is provided. The surface is furnished with a plurality of grooves which are substantially mutually parallel, each groove comprising a first and a second face. All first faces are substantially planar and mutually parallel. The constituent layers of the multilayer structure are provided in a stack upon each first face in such a manner as to be parallel thereto, the thickness of the stacks being such that each stack makes physical contact with each immediately neighbouring stack.
Inventors
- 👤 Martinus A. M. Gijs
- 👤 Jacobus B. Giesbers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:20
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11B5/3906; G11B5/3916; G11B5/3919; G11B5/3922; G11B5/3925; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; B; B82; B82Y; B82Y10/00; B82Y25/00; H; H10; H10N; H10N50/00; H10N50/10; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/928; Y10T; Y10T428/00; Y10T428/12; Y10T428/12465; Y10T428/12472; Y10T428/12493; Y10T428/12535; Y10T428/12993
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
119 words
A magneto-resistance device comprising a stacked structure, said stacked structure comprising a substrate having a surface on which multilayer structures are provided, characterized in that the surface is furnished with a plurality of grooves which are substantially mutually parallel, each groove comprising a first face and a second face, all first faces being substantially planar and mutually parallel, the constituent layers of each multilayer structure being provided in a stack upon each said first face in such a manner as to be parallel thereto, the thickness of the stacks in a direction perpendicular to the first faces being such that adjacent faces, parallel to the first faces, of immediately neighboring stacks make physical contact with, and overlap each other.
Claim 2
Dependent Claim
119 words
A magneto-resistance device comprising a stacked structure, said stacked structure comprising a substrate having a surface on which multilayer structures are provided, characterized in that the surface is furnished with a plurality of grooves which are substantially mutually parallel, each groove comprising a first face and a second face, all first faces being substantially planar and mutually parallel, the constituent layers of each multilayer structure being provided in a stack upon each said first face in such a manner as to be parallel thereto, the thickness of the stacks in a direction perpendicular to the first faces being such that adjacent faces, parallel to the first faces, of immediately neighboring stacks make physical contact with, and overlap each other.
Claim 3
Dependent Claim
43 words
A magneto-resistance device according to claim 1, characterised in that the grooves are substantially V-shaped and immediately adjacent, whereby perpendicular separation d 1 of consecutive first faces and perpendicular separation d 2 of consecutive second faces both lie in the range 0.01-10 μm.
Claim 4
Dependent Claim
35 words
A magneto-resistance device according to claim 1, characterised in that the substrate comprises a monocrystalline material selected from the group consisting of Si, Ge, the II-VI semiconducting compounds, the III-V semiconducting compounds, and mixtures thereof.
Claim 5
Dependent Claim
45 words
A magneto-resistance device according to claim 3, characterised in that the substrate is an InP or Si single crystal in which the grooves are etched into a (100) or (211) crystal plane in such a manner that each first face is a (111) crystal plane.
Claim 6
Dependent Claim
15 words
A magneto-resistance device according to claim 2, characterised in that d 1 >d 2 .
Claim 7
Dependent Claim
55 words
A magneto-resistance device according to claim 2, characterised in that every stack consecutively comprises a first highly conductive metallic layer of thickness d C <d 1 , followed by a multilayer of total thickness d 1 -d C , followed in turn by a second highly conductive metallic layer of approximate thickness d C .
Claim 8
Dependent Claim
107 words
A magneto-resistance device according to claim 1, characterised in that every stack comprises at least one multiplet of metallic layers selected from the group consisting of Fe/Cr/Fe, Co/Ag/Co, Co/Cu/Co, MnFe/NiFe/Cu/NiFe, Ni X Fe Y Co Z /Cu/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Ag/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Cu/Co/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Ag/Co/Ni X' Fe Y' Co Z' , and combinations thereof, whereby the individual values of X, Y, Z, X', Y' and Z' all lie in the range 0 to 1, and X+Y+Z=1=X'+Y'+Z'.
Claim 9
Dependent Claim
35 words
A magneto-resistance device according to claim 2, characterised in that the substrate comprises a monocrystalline material selected from the group consisting of Si, Ge, the II-VI semiconducting compounds, the III-V semiconducting compounds, and mixtures thereof.
Claim 10
Dependent Claim
55 words
A magneto-resistance device according to claim 5, characterised in that every stack consecutively comprises a first highly conductive metallic layer of thickness d C <d 1 , followed by a multilayer of total thickness d 1 -d C , followed in turn by a second highly conductive metallic layer of approximate thickness d C .
Claim 11
Dependent Claim
107 words
A magneto-resistance device according to claim 2, characterised in that every stack comprises at least one multiplet of metallic layers selected from the group consisting of Fe/Cr/Fe, Co/Ag/Co, Co/Cu/Co, MnFe/NiFe/Cu/NiFe, Ni X Fe Y Co Z /Cu/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Ag/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Cu/Co/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Ag/Co/Ni X' Fe Y' Co Z' , and combinations thereof, whereby the individual values of X, Y, Z, X', Y' and Z' all lie in the range 0 to 1, and X+Y+Z=1=X'+Y'+Z'.
Claim 12
Dependent Claim
107 words
A magneto-resistance device according to claim 3, cnaracterised in that every stack comprises at least one multiplet of metallic layers selected from the group consisting of Fe/Cr/Fe, Co/Ag/Co, Co/Cu/Co, MnFe/NiFe/Cu/NiFe, Ni X Fe Y Co Z /Cu/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Ag/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Cu/Co/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Ag/Co/Ni X' Fe Y' Co Z' , and combinations thereof, whereby the individual values of X, Y, Z, X', Y' and Z' all lie in the range 0 to 1, and X+Y+Z=1=X'+Y'+Z'.
Claim 13
Dependent Claim
107 words
A magneto-resistance device according to claim 4, characterised in that every stack comprises at least one multiplet of metallic layers selected from the group consisting of Fe/Cr/Fe, Co/Ag/Co, Co/Cu/Co, MnFe/NiFe/Cu/NiFe, Ni X Fe Y Co Z /Cu/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Ag/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Cu/Co/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Ag/Co/Ni X' Fe Y' Co Z' , and combinations thereof, whereby the individual values of X, Y, Z, X', Y' and Z' all lie in the range 0 to 1, and X+Y+Z=1=X'+Y'+Z'.
Claim 14
Dependent Claim
107 words
A magneto-resistance device according to claim 5, characterised in that every stack comprises at least one multiplet of metallic layers selected from the group consisting of Fe/Cr/Fe, Co/Ag/Co, Co/Cu/Co, MnFe/NiFe/Cu/NiFe, Ni X Fe Y Co Z /Cu/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Ag/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Cu/Co/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Ag/Co/Ni X' Fe Y' Co Z' , and combinations thereof, whereby the individual values of X, Y, Z, X', Y' and Z' all lie in the range 0 to 1, and X+Y+Z=1=X'+Y'+Z'.
Claim 15
Dependent Claim
107 words
A magneto-resistance device according to claim 6, characterised in that every stack comprises at least one multiplet of metallic layers selected from the group consisting of Fe/Cr/Fe, Co/Ag/Co, Co/Cu/Co, MnFe/NiFe/Cu/NiFe, Ni X Fe Y Co Z /Cu/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Ag/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Cu/Co/Ni X' Fe Y' Co Z' , Ni X Fe Y Co Z /Co/Ag/Co/Ni X' Fe Y' Co Z' , and combinations thereof, whereby the individual values of X, Y, Z, X', Y' and Z' all lie in the range 0 to 1, and X+Y+Z=1=X'+Y'+Z'.
Claim 16
Dependent Claim
47 words
A magnetic head comprising a magneto-resistance device of claim 1, a magnetic substrate, flux guides so positioned relative to the magneto-resistive device and the substrate so as to form a magnetic circuit and a magnetic gap provided between end faces of the substrate and a flux guide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-06-18 | 1999-12-18 | 2000-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-06-18 | 2003-12-18 | 2004-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-06-18 | 2007-12-18 | 2008-06-18 | $7700.00 | Window Closed / Lapsed |