Abstract A semiconductor device has an alignment mark formed as a diffraction grating which comprises a plurality of unit markers arranged so that the period P of the diffraction grating is 8 μm. The length d 1 of each unit marker in the scanning direction of a laser beam is 4 μm while the length L thereof in a direction perpendicular to the scanning direction is 4 μm. Each unit marker comprises nine unit segments each of 0.8 μm×0.8 μm in size and arranged in an array of 3×3. Submicron openings constituting an unit segment has a small size for sufficiently filling the openings with deposited metal. An accurate alignment can be obtained by the alignment mark in an optical stepper for manufacturing semiconductor devices.
A semiconductor device, comprising: a substrate; a layer formed overlying said substrate; and at least one alignment mark having a plurality of unit markers aligned in a first direction in a uniform pitch, each of said unit markers including a plurality of segments formed in said layer; wherein each of said segments is implemented by a unit segment arrayed in at least one of said first direction and a second direction perpendicular to said first direction with a uniform space disposed therebetween; and wherein each of said unit segments has a square surface having sides parallel to said first direction or said second direction, and each of said sides is not longer than 1 μm.
Claim 2
Dependent Claim
115 words
A semiconductor device, comprising: a substrate; a layer formed overlying said substrate; and at least one alignment mark having a plurality of unit markers aligned in a first direction in a uniform pitch, each of said unit markers including a plurality of segments formed in said layer; wherein each of said segments is implemented by a unit segment arrayed in at least one of said first direction and a second direction perpendicular to said first direction with a uniform space disposed therebetween; and wherein each of said unit segments has a square surface having sides parallel to said first direction or said second direction, and each of said sides is not longer than 1 μm.
Claim 3
Dependent Claim
144 words
A semiconductor device comprising: a substrate; a layer formed overlying said substrate; and at least one alignment mark having a plurality of unit markers, said unit markers being aligned in a first direction in a uniform pitch corresponding to a wavelength of a laser beam used for aligning said semiconductor device, each of said unit markers including a plurality of segments formed in said overlying layer; wherein each of said segments is implemented by a unit segment arrayed in at least one of said first direction and a second direction perpendicular to said first direction with a uniform space disposed therebetween; wherein each of said unit markers has a square area having sides parallel to said first direction or said second direction; and wherein each of said unit segments has a square surface having sides parallel to said first direction or said second direction.
Claim 4
Dependent Claim
144 words
A semiconductor device comprising: a substrate; a layer formed overlying said substrate; and at least one alignment mark having a plurality of unit markers, said unit markers being aligned in a first direction in a uniform pitch corresponding to a wavelength of a laser beam used for aligning said semiconductor device, each of said unit markers including a plurality of segments formed in said overlying layer; wherein each of said segments is implemented by a unit segment arrayed in at least one of said first direction and a second direction perpendicular to said first direction with a uniform space disposed therebetween; wherein each of said unit markers has a square area having sides parallel to said first direction or said second direction; and wherein each of said unit segments has a square surface having sides parallel to said first direction or said second direction.