Semiconductor device having laminated tight and coarse insulating layers

Claim 2

A semiconductor device comprising: a semiconductor substrate; an element formed above said semiconductor substrate; and a passivation layer formed on said element, said passivation layer including a laminated configuration formed by a plurality of tight insulating layers and a plurality of coarse insulating layers alternating with said tight insulating layers, said insulating layers being made of silicon nitride.

Claim 3

A device as set forth in claim 1, wherein a density of said tight insulating layers is about 2.60 g/cm 3 , and a density of said coarse insulating layers being about 2.55 g/cm 3 .

Claim 4

A device as set forth in claim 1, wherein said tight insulating layers and said coarse insulating layers are manufactured by using the same CVD apparatus.

Claim 5

A semiconductor device comprising: a semiconductor substrate; an element formed above said semiconductor substrate; and a passivation layer formed on said element, said passivation layer including a laminated configuration formed by a plurality of first insulating layers and a plurality of second insulating layers alternating with said first insulating layers, said first and second insulating layers being made of the silicon nitrite, a density of said first insulating layers being larger than density of said second insulating layers.

Claim 6

A semiconductor device comprising: a semiconductor substrate; an element formed above said semiconductor substrate; and a passivation layer formed on said element, said passivation layer including a laminated configuration formed by a plurality of first insulating layers and a plurality of second insulating layers alternating with said first insulating layers, said first and second insulating layers being made of the silicon nitrite, a density of said first insulating layers being larger than density of said second insulating layers.

Claim 7

A device as set forth in claim 4, wherein a density of said first insulating layers is about 2.60 g/cm 3 , and a density of said second insulating layers being about 2.55 g/cm 3 .

Claim 8

A device as set forth in claim 4, wherein said first insulating layers and said second insulating layers are manufactured by using the same CVD apparatus.