High-breakdown-voltage MOS transistor

Claim 2

A high-breakdown-voltage MOS transistor comprising: a semiconductor layer of another conductivity type formed on a semiconductor substrate of one conductivity type and serving as a drain region; a drain electrode formed on said semiconductor layer of the other conductivity type; a diffusion layer of said one conductivity type selectively formed on said semiconductor layer of the other conductivity type to surround said drain electrode, said diffusion layer having an outer side; a base region of said one conductivity type formed on said semiconductor layer of the other conductivity type so that said base region is adjacent to said outer side of said diffusion layer of said one conductivity type; a source region formed on said base region of said one conductivity type; a gate insulating film; a gate electrode formed through said gate insulating film on a junction portion of said semiconductor layer of the other conductivity type, serving as said drain region and said base region of said one conductivity type between said source region and said diffusion layer of said one conductivity type; a source electrode formed on said semiconductor substrate of said one conductivity type so that said source electrode is connected to said source region; and a heavily doped layer formed on said semiconductor layer of the other conductivity type serving as said drain region immediately below said gate electrode, said gate electrode being formed on said heavily doped layer so that said gate electrode is in contact with said base region of one conductivity type.

Claim 3

A transistor according to claim 1, wherein said semiconductor layer of the other conductivity type serving as said drain region is formed by epitaxially growing said semiconductor substrate of said one conductivity type.

Claim 4

A transistor according to claim 1, wherein said semiconductor layer of the other conductivity type serving as said drain region is formed such that said semiconductor layer of the other conductivity type adheres on said semiconductor substrate of said one conductivity type.

Claim 5

A transistor according to claim 1, wherein said source electrode is connected to said semiconductor substrate of said one conductivity type, said diffusion layer of one conductivity type and said base region at the same potential.

Claim 6

A high-breakdown-voltage MOS transistor comprising: a semiconductor layer of another conductivity type formed on a semiconductor substrate of one conductivity type and serving as a drain region; a drain electrode formed on said semiconductor layer of the other conductivity type; a diffusion layer of said one conductivity type selectively formed on said semiconductor layer of the other conductivity type to surround said drain electrode, said diffusion layer having an outer side; a base region of said one conductivity type formed on said semiconductor layer of the other conductivity type so that said base region is adjacent to said outer side of said diffusion layer of said one conductivity type; a source region formed on said base region of said one conductivity type; a gate insulating film; a gate electrode formed through said gate insulating film on a junction portion of said semiconductor layer of the other conductivity type, serving as said drain region and said base region of said one conductivity type between said source region and said diffusion layer of said one conductivity type; a source electrode formed on said semiconductor substrate of said one conductivity type so that said source electrode is connected to said source region; and a heavily doped layer formed on said semiconductor layer of the other conductivity type serving as said drain region immediately below said gate electrode, said heavily doped layer being formed on said semiconductor layer of the other conductivity type and extending to a depth equal to a depth of said diffusion layer of said one conductivity type.

Claim 7

A high-breakdown-voltage MOS transistor comprising: a semiconductor layer of another conductivity type formed on a semiconductor substrate of one conductivity type and serving as a drain region; a drain electrode formed on said semiconductor layer of the other conductivity type; a diffusion layer of said one conductivity type selectively formed on said semiconductor layer of the other conductivity type to surround said drain electrode, said diffusion layer having an outer side; a base region of said one conductivity type formed on said semiconductor layer of the other conductivity type so that said base region is adjacent to said outer side of said diffusion layer of said one conductivity type; a source region formed on said base region of said one conductivity type; a gate insulating film; a gate electrode formed through said gate insulating film on a junction portion of said semiconductor layer of the other conductivity type, serving as said drain region and said base region of said one conductivity type between said source region and said diffusion layer of said one conductivity type; a source electrode formed on said semiconductor substrate of said one conductivity type so that said source electrode is connected to said source region; and a heavily doped layer formed on said semiconductor layer of the other conductivity type serving as said drain region immediately below said gate electrode, said heavily doped layer being formed on said semiconductor layer of the other conductivity type and extending to a depth equal to a depth of said diffusion layer of said one conductivity type.