Method for low temperature growth of epitaxial silicon and devices produced thereby

Abstract

Abstract In accordance with the invention, a thin layer of epitaxial silicon is grown at low temperatures at or below 300° C. by the steps of providing a substrate, forming an oriented dielectric buffer layer on the substrate and growing epitaxial silicon on the buffer layer. Preferably the substrate has a glass surface and the oriented buffer layer is cubic ZrO 2 . The buffer layer is preferably oriented by bombarding it with a directed ion beam while the buffer layer is being deposited on the substrate. For example, a buffer layer of (100) cubic ZrO 2 can be grown at a temperature as low as 300° C. The oriented cubic ZrO 2 is an excellent buffer for epitaxial silicon on glass due to a good match of lattice parameters with silicon and a good match of thermal expansion coefficients with glass. An oriented (100) silicon epitaxial film can then be grown on the epitaxial template provided by the buffer layer at a temperature as low as 250° C. This low temperature process for producing epitaxial films offers multiple advantages: (1) reduced silicon interfacial defect densities and enlarged grain size permitting improved thin film transistor performance due to a lowered "off" current; (2) higher electron mobility permitting the fabrication of integrated displays; (3) lower temperature processing permitting the use of inexpensive glass substrates such as borosilicates; (4) sufficiently low temperature processing to permit the use of new lightweight substrates such as glass-coated polymeric materials (glass-coated plastics) which can substantially reduce the weight of displays and thus enhance the portability of portable computers, video telephones, and personal communicators; and (5) the use of new buffer layers such as ZrO 2 which can block the diffusion of Na ions from the substrate.

Inventors

• 👤 Jueinai R. Kwo

Bibliographic Details