Abstract In order to obtain a pressure-connection type semiconductor device while preventing misregistration of a semiconductor base substrate and a thermal compensator with no penetration of an insulating/holding material and a method suitable for fabricating this device, concentric first and second steps (31c, 31a) are provided on an upper major surface of a first thermal compensator (31) from its outer periphery toward the center. A corner groove (3b) is provided along the overall periphery of an inner comer of the first step (31c), in the form of a ring. Since no insulating/holding material is provided in a contact surface between the semiconductor the substrate and the thermal compensator, the semiconductor base substrate and the thermal compensator are maintained in excellent electrical contact while no local stress is applied to the semiconductor substrate when the same is brought into pressure contact with the thermal compensator.
A pressure-connection type semiconductor device comprising: a semiconductor base substrate having at least P-N junction; a thermal compensator which contacts said semiconductor base substrate, said thermal compensator having a larger diameter than said semiconductor base substrate in an alloy-free state, a first step portion separated from said semiconductor base substrate along a periphery of said thermal compensator, and a corner groove formed in an inner corner of said first step portion along said periphery of said thermal compensator; an insulating/holding material which covers an outer peripheral portion of said semiconductor base substrate, said insulating/holding material being formed exterior to areas where said semiconductor base substrate contacts said thermal compensator; and a bonding layer formed on said first step portion of said thermal compensator, for bonding said insulating/holding material to said thermal compensator, said corner groove storing any overflowing portion of said bonding layer.
Claim 2
Dependent Claim
143 words
A pressure-connection type semiconductor device comprising: a semiconductor base substrate having at least P-N junction; a thermal compensator which contacts said semiconductor base substrate, said thermal compensator having a larger diameter than said semiconductor base substrate in an alloy-free state, a first step portion separated from said semiconductor base substrate along a periphery of said thermal compensator, and a corner groove formed in an inner corner of said first step portion along said periphery of said thermal compensator; an insulating/holding material which covers an outer peripheral portion of said semiconductor base substrate, said insulating/holding material being formed exterior to areas where said semiconductor base substrate contacts said thermal compensator; and a bonding layer formed on said first step portion of said thermal compensator, for bonding said insulating/holding material to said thermal compensator, said corner groove storing any overflowing portion of said bonding layer.
Claim 3
Dependent Claim
34 words
A pressure-connection type semiconductor device in accordance with claim 1, wherein a second step portion defining an outer periphery of said contact surface is formed inside said first step portion of said thermal compensator.