Shield configuration for vacuum chamber

Claim 2

A vacuum chamber apparatus comprising: a shield lining said vacuum processing chamber in which substrate processing is to be performed at a particular location in said chamber, said shield being configured to act as a barrier between a wall of said chamber and said particular location, said shield having an inner surface and an outer surface, wherein said shield is configured so that said inner surface generally faces away from said particular location in said processing chamber where processing is performed and said outer surface generally faces toward said particular location in said processing chamber where processing is performed, wherein said inner surface has a first surface emissivity and said outer surface has a second surface emissivity, wherein said first emissivity is higher than said second emissivity.

Claim 3

An apparatus as in claim 1, wherein said shield configuration includes an arch shaped cross section such that said inner surface is located on a concave surface of said arch and said outer surface is located on a convex surface of said arch.

Claim 4

An apparatus as in claim 2, wherein said arch shaped cross section forms a lower portion of an "h" shaped cross section for said shield and said inner surface is located inside the concave surfaces of said arch of said "h" shaped cross section and said outer surface includes the surfaces of said shield other than said inner surface including those surfaces on the convex surface of said arch.

Claim 5

The apparatus as in claim 3, wherein a heater assembly is located in said chamber close to and facing a portion of said inner surface of said shield.

Claim 6

An apparatus as in claim 4, wherein said heater assembly includes several heater units spaced along a perimeter of said shield, wherein said inner surface includes a first center region surface area directly opposite from a center of a first of said several heater units, said center region surface area having a third surface emissivity, wherein said inner surface includes an end or corner region surface area beginning at the edge of said center region surface area and extending beyond the end of a first of said several heater units to an edge of a second center region surface area opposite a second of said several heater units, said end region surface area having a fourth surface emissivity, wherein said surface areas of third surface emissivity and fourth surface emissivity collectively effectively provide said first emissivity.

Claim 7

The vacuum chamber as in claim 5, wherein said first emissivity differs from said second emissivity by a coefficient of emissivity of at least 0.1; wherein said shield temperature is controlled at generally the same temperature as the temperature of the sputter deposited material deposited during the sputtering process; wherein said shield is floatingly supported in said chamber by a set of knife edge support assemblies each having a knife edge ridge line aligned toward a center of said shield; wherein one of said set of knife edge support assemblies includes a knife edge support cylinder having a ridge on a top surface thereof and a counterbore in said chamber to engage and receive a bottom and sides of said cylinder, such that when said knife edge support cylinder is disposed in said counterbore and a knife edge groove, configured to be aligned with said knife edge ridge line and to receive said ridge of said cylinder, in said shield is brought into contact with said ridge, said cylinder turns so that said knife edge ridge line of said knife edge support cylinder is aligned with said knife edge groove; a generally rectangular pedestal within said chamber for supporting a rectangular substrate; wherein said shield is disposed between said pedestal and walls of said vacuum chamber comprising four substantially straight sections joined by four curved sections, each said straight section including an arc-shaped portion facing toward a rear of said pedestal; and four substantially straight radiant heater elements disposed adjacent to and at least partially within and extending along said arc-shaped portions of said straight section; wherein said rearward facing surfaces of said central portions are polished to 40 Ra or more; further comprising a "Z" type shaped shadow frame circumferentially surround said substrate support pedestal, said "Z" shaped frame having one leg extending over an edge of a substrate to be processed on said substrate support pedestal, said "Z" shaped frame acting as an apron for a perimeter of said substrate support pedestal, said "Z" shaped frame having a second leg extending as a flange towards a wall of the chamber; wherein said shield supports a first set of knife edge protrusions; and wherein said shadow frame is configured to include a first set of knife edge grooves to mate with said first set of knife edge protrusions, such that said shadow frame is supported on said first set of knife edge protrusions of said shield which are generally in contact with said first set of knife edge grooves.

Claim 8

The apparatus as in claim 2, wherein a heater assembly is located in said chamber close to and facing a portion of said inner surface of said shield.

Claim 9

The apparatus as in claim 1, wherein a heater assembly is located in said chamber close to and facing a portion of said inner surface of said shield.

Claim 10

The apparatus as in claim 1, wherein said first emissivity differs from said second emissivity by a coefficient of emissivity of approximately 0.1 or more.

Claim 11

A processing chamber for processing a substrate, comprising: a vacuum chamber in which said substrate is adapted to be supported, said chamber having an inner wall facing a processing region located over a surface of said substrate; and a shield lining said inner wall, disposed inside said inner wall, and having an outer surface facing toward said processing region and an inner surface facing away from said processing region, wherein said outer surface and selected portions of said inner surface are polished to have a surface finish of approximately 30 Ra or more.

Claim 12

A processing chamber for processing a substrate, comprising: a vacuum chamber in which said substrate is adapted to be supported, said chamber having an inner wall facing a processing region located over a surface of said substrate; and a shield lining said inner wall, disposed inside said inner wall, and having an outer surface facing toward said processing region and an inner surface facing away from said processing region, wherein said outer surface and selected portions of said inner surface are polished to have a surface finish of approximately 30 Ra or more.

Claim 13

A vacuum chamber as in claim 10, wherein said inner surface has a first surface emissivity and said outer surface having a second surface emissivity, wherein said first emissivity is higher than said second emissivity.

Claim 14

The vacuum chamber as in claim 11, wherein said inner surface is oxidized to provide said first emissivity.

Claim 15

A vacuum chamber as in claim 11, wherein said first emissivity differs from said second emissivity by a coefficient of emissivity of approximately 0.1 or more.

Claim 16

A process for sputter deposition onto a substrate positioned in a processing region of a vacuum chamber having and a shield covering wall portions of said vacuum chamber between said target and said substrate, said process comprising the steps of: sputtering material from said target onto said substrate to form sputter deposited material thereupon, and during the sputtering step, controlling the temperature of said shield to a temperature substantially equal to the temperature of said sputter deposited material, wherein said controlling step radiantly heats a surface of said shield facing away from said processing region by at least one heater disposed adjacent to a concave side of an arch shaped portion of said shield.

Claim 17

A process for sputter deposition onto a substrate positioned in a processing region of a vacuum chamber having and a shield covering wall portions of said vacuum chamber between said target and said substrate, said process comprising the steps of: sputtering material from said target onto said substrate to form sputter deposited material thereupon, and during the sputtering step, controlling the temperature of said shield to a temperature substantially equal to the temperature of said sputter deposited material, wherein said controlling step radiantly heats a surface of said shield facing away from said processing region by at least one heater disposed adjacent to a concave side of an arch shaped portion of said shield.

Claim 18

A sputtering process as recited in claim 14, wherein said shield has an "h" type cross section and wherein a portion of said surface of said shield facing away from said processing region is located inside the lower arch of said "h" cross section and an outer surface of said shield includes the surfaces of said shield other than said portion of surface located inside the lower arch.

Claim 19

A sputtering process as recited in claim 15, wherein said surface inside said arched shaped portion has a first surface emissivity and the surfaces of said shield other than said portion of surface located inside the arched shaped portion have a second surface emissivity, wherein said first emissivity is higher than said second emissivity.

Claim 20

A sputtering process as recited in claim 16, wherein said first emissivity differs from said second emissivity by a coefficient of emissivity of approximately 0.1 or more.

Claim 21

A sputtering process as recited in claim 15, wherein said surface inside said lower arch has a first surface emissivity and the surfaces of said shield other than said portion of surface located inside the lower arch have a second surface emissivity, wherein said first emissivity is higher than said second emissivity.

Claim 22

A sputtering process as recited in claim 18, wherein said first emissivity differs from said second emissivity by a coefficient of emissivity of approximately 0.1 or more.

Claim 23

A processing chamber for processing a substrate, comprising: a vacuum chamber in which a said substrate is adapted to be supported, said chamber having an inner wall facing a processing region located over a surface of said substrate; and a shield lining said wall, disposed inside said inner wall, facing said processing region, and floatingly supported in said chamber by a plurality of knife edge support assemblies each having a knife edge alignment line aligned toward a center of said shield.

Claim 24

A processing chamber for processing a substrate, comprising: a vacuum chamber in which a said substrate is adapted to be supported, said chamber having an inner wall facing a processing region located over a surface of said substrate; and a shield lining said wall, disposed inside said inner wall, facing said processing region, and floatingly supported in said chamber by a plurality of knife edge support assemblies each having a knife edge alignment line aligned toward a center of said shield.

Claim 25

A processing chamber for processing a substrate as in claim 20, wherein one of said set of knife edge support assemblies includes a knife edge support cylinder having a ridge on a top surface thereof and a counterbore in said chamber to engage and receive a bottom and sides of said cylinder, such that when said knife edge support cylinder is disposed in said counterbore and a knife edge groove, configured to be aligned with said knife edge ridge line and to receive said ridge of said cylinder, in said shield is brought into contact with said ridge, said cylinder turns so that said knife edge ridge line of said knife edge support cylinder is aligned with said knife edge groove.

Claim 26

A chamber for processing a rectangular substrate, comprising: a vacuum chamber; a generally rectangular pedestal within said chamber for supporting a rectangular substrate; a shield member disposed between said pedestal and walls of said vacuum chamber, comprising four substantially straight sections joined by four curved sections, each said straight section including an arc-shaped portion facing toward the rear of said pedestal; and four substantially straight radiant heater elements disposed adjacent to and at least partially within and extending along said arc-shaped portions of said straight section.

Claim 27

A chamber for processing a rectangular substrate, comprising: a vacuum chamber; a generally rectangular pedestal within said chamber for supporting a rectangular substrate; a shield member disposed between said pedestal and walls of said vacuum chamber, comprising four substantially straight sections joined by four curved sections, each said straight section including an arc-shaped portion facing toward the rear of said pedestal; and four substantially straight radiant heater elements disposed adjacent to and at least partially within and extending along said arc-shaped portions of said straight section.

Claim 28

A chamber for processing a rectangular substrate, as recited in claim 22, wherein said four curved sections do not have radiant heating elements extending therealong.

Claim 29

A chamber for processing a rectangular substrate, as recited in claim 23, wherein said curved portions also include arc-shaped portions facing toward the rear of said pedestal, and wherein rearward facing surfaces of said arc-shaped potions of said curved portions and first rearward facing surfaces of end portions of said arc-shaped portions of said straight sections have substantially higher emissivity than second rearward facing surfaces of central portions of said arc-shaped portions of said straight sections.

Claim 30

A chamber for processing a rectangular substrate, as recited in claim 24, wherein said rearward facing surfaces of said central portions are polished to 40 Ra or more.

Claim 31

A chamber for processing a rectangular substrate, as recited in claim 22, further comprising a sputtering target disposed facing said pedestal add wherein said shield includes a portion extending vertically from said arc-shaped portions of said straight and curved sections into an annular groove formed around a periphery of said sputtering target, said vertically extending portion being separated from said sputtering target.

Claim 32

A chamber comprising: an "h" shaped shield lining a portion of a wall of said chamber spanning an area between a sputter target and a support for a substrate on which target material is to be sputter deposited.

Claim 33

A chamber comprising: an "h" shaped shield lining a portion of a wall of said chamber spanning an area between a sputter target and a support for a substrate on which target material is to be sputter deposited.

Claim 34

A chamber as in claim 27, wherein a heater assembly is positioned under the arch of the lower portion of said "h" shape.

Claim 35

A chamber as in claim 28, wherein said shield is generally rectangularly shaped to match a rectangular shape of said chamber.

Claim 36

The vacuum chamber as in claim 29, wherein a portion of the surface of said shield lining facing said heater assembly is oxidized to provide an increased coefficient of surface emissivity at said portion.

Claim 37

A chamber comprising: a "Z" type shaped shadow frame circumferentially surrounding a substrate support pedestal, said "Z" shaped frame having one leg extending over an edge of a substrate to be processed on said substrate support pedestal thereby preventing said edge from being sputter deposited, said "Z" shaped frame acting as an apron for a perimeter of said substrate support pedestal, said "Z" shaped frame having a second leg extending as a flange towards a wall of the chamber.

Claim 38

A chamber comprising: a "Z" type shaped shadow frame circumferentially surrounding a substrate support pedestal, said "Z" shaped frame having one leg extending over an edge of a substrate to be processed on said substrate support pedestal thereby preventing said edge from being sputter deposited, said "Z" shaped frame acting as an apron for a perimeter of said substrate support pedestal, said "Z" shaped frame having a second leg extending as a flange towards a wall of the chamber.

Claim 39

A chamber comprising: a shield supporting a first element of a first set of knife edge protrusions and grooves, wherein an element of said first set of knife edge protrusions and grooves is either a knife edge protrusion or a knife edge groove of said first set configured to mate with one another; a shadow frame configured to include a second element of said first set of knife edge protrusions and grooves to mate with said first element of said first set of knife edge protrusions and grooves, such that said shadow frame is supported on said first element of said first set of knife edge protrusions and grooves of said shield which are generally in contact with said second element of said first set of knife edge protrusions and grooves of said frame.

Claim 40

A chamber comprising: a shield supporting a first element of a first set of knife edge protrusions and grooves, wherein an element of said first set of knife edge protrusions and grooves is either a knife edge protrusion or a knife edge groove of said first set configured to mate with one another; a shadow frame configured to include a second element of said first set of knife edge protrusions and grooves to mate with said first element of said first set of knife edge protrusions and grooves, such that said shadow frame is supported on said first element of said first set of knife edge protrusions and grooves of said shield which are generally in contact with said second element of said first set of knife edge protrusions and grooves of said frame.

Claim 41

A chamber as in claim 32, further comprising: a second set of knife edge protrusions supported in a wall of said chamber; wherein said shield includes a second set of knife edge grooves to mate said second set of knife edge protrusions, such that said shield is supported on said second set of knife edge protrusions of said chamber wall which are generally in contact with said second set of knife edge grooves.