US5512836A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid-state micro proximity sensor
Assignee: Individual
•
Filing: 1994-07-26
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Granted: 1996-04-30
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Expires: 2014-07-26
Abstract
Abstract A solid-state fringe effect capacitive proximity sensor is described which lends itself to use for surface mounting and other space constrained applications. The sensor comprises an insulating substrate having a plurality of sensing electrodes formed thereon and without any screen elements therebetween. The electrodes are adapted to measure the proximity distance of a target object (conductive or non-conductive) by means of the fringe capacitance effect created between the electrodes. Capacitance measurement processing circuitry is electrically connected to the plurality of sensory electrodes.
Inventors
- 👤 Zhenhai Chen
- 👤 Ren C. Luo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 11:08
CPC Classifications
G; G01; G01V; G01V3/00; G01V3/08; G01V3/088; G01B; G01B7/00; G01B7/02; G01B7/023; G01D; G01D5/00; G01D5/12; G01D5/14; G01D5/24; G01D5/2405; H; H03; H03K; H03K17/00; H03K17/94; H03K17/945; H03K17/955; H03K17/96; H03K2017/9602
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
85 words
A solid-state fringe effect micro capacitive proximity sensor, said proximity sensor comprising: an insulating substrate; a plurality of sensing electrodes formed on said insulating substrate in closely spaced relationship and without any screen element therebetween, said electrodes adapted to measure the proximity distance of a target object by means of the fringe capacitance effects created between said electrodes and wherein the distance range between said electrodes is 1 micrometer to electrode width; and capacitance measurement processing circuitry electrically connected to said plurality of sensing electrodes.
Claim 2
Dependent Claim
85 words
A solid-state fringe effect micro capacitive proximity sensor, said proximity sensor comprising: an insulating substrate; a plurality of sensing electrodes formed on said insulating substrate in closely spaced relationship and without any screen element therebetween, said electrodes adapted to measure the proximity distance of a target object by means of the fringe capacitance effects created between said electrodes and wherein the distance range between said electrodes is 1 micrometer to electrode width; and capacitance measurement processing circuitry electrically connected to said plurality of sensing electrodes.
Claim 3
Dependent Claim
22 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said insulating substrate comprises silica (SiO 2 ) wafer.
Claim 4
Dependent Claim
24 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said insulating substrate comprises sapphire (Al 2 O 3 ) wafer.
Claim 5
Dependent Claim
20 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said insulating substrate comprises flexible polyimide film.
Claim 6
Dependent Claim
25 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said plurality of sensing electrodes comprises an etch of a chrome layer.
Claim 7
Dependent Claim
26 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said plurality of sensing electrodes comprises an etch of gold and chrome layers.
Claim 8
Dependent Claim
24 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said plurality of electrodes defines a plurality of concentric circles pattern.
Claim 9
Dependent Claim
24 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said plurality of electrodes defines a plurality of concentric squares pattern.
Claim 10
Dependent Claim
21 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said plurality of electrodes defines a comb pattern.
Claim 11
Dependent Claim
35 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein said capacitance measurement processing circuitry is electrically connected to but spaced-apart from said insulating substrate and is fabricated on a non-insulating substrate.
Claim 12
Dependent Claim
27 words
A solid-state fringe effect capacitive proximity sensor according to claim 1 wherein said capacitance measurement processing circuitry is formed as an integral part of said proximity sensor.
Claim 13
Dependent Claim
22 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 1 wherein a protective layer is provided over said sensing electrodes.
Claim 14
Dependent Claim
111 words
A solid-state fringe effect micro capacitive proximity sensor, said proximity sensor comprising: a substrate; capacitance measurement processing circuitry formed on said substrate so as to become an integral part of said proximity sensor; an insulating layer deposited on the combination of processing circuitry and substrate; and a plurality of sensing electrodes formed on said insulating layer in closely spaced relationship and without any screen element therebetween, said electrodes being electrically connected to said processing circuitry and adapted to measure the proximity distance of a target object by means of the fringe capacitance effects created between said electrodes and wherein the distance range between said electrodes is 1 micrometer to electrode width.
Claim 15
Dependent Claim
111 words
A solid-state fringe effect micro capacitive proximity sensor, said proximity sensor comprising: a substrate; capacitance measurement processing circuitry formed on said substrate so as to become an integral part of said proximity sensor; an insulating layer deposited on the combination of processing circuitry and substrate; and a plurality of sensing electrodes formed on said insulating layer in closely spaced relationship and without any screen element therebetween, said electrodes being electrically connected to said processing circuitry and adapted to measure the proximity distance of a target object by means of the fringe capacitance effects created between said electrodes and wherein the distance range between said electrodes is 1 micrometer to electrode width.
Claim 16
Dependent Claim
19 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said substrate comprises silicon (Si) wafer.
Claim 17
Dependent Claim
20 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said substrate comprises gallium arsenic (GaAs) wafer.
Claim 18
Dependent Claim
25 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said plurality of sensing electrodes comprises an etch of a chrome layer.
Claim 19
Dependent Claim
25 words
A solid-state fringe effect capacitive proximity sensor according to claim 13 wherein said plurality of sensing electrodes comprises an etch of gold and chrome layers.
Claim 20
Dependent Claim
24 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said plurality of electrodes defines a plurality of concentric circles pattern.
Claim 21
Dependent Claim
24 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said plurality of electrodes defines a plurality of concentric squares pattern.
Claim 22
Dependent Claim
21 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said plurality of electrodes defines a comb pattern.
Claim 23
Dependent Claim
19 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein said insulating layer comprises polyimide film.
Claim 24
Dependent Claim
22 words
A solid-state fringe effect micro capacitive proximity sensor according to claim 13 wherein a protective layer is provided over said sensing electrodes.
Claim 25
Dependent Claim
26 words
A state fringe effect micro capacitive proximity sensor according to claim 10 wherein the non-insulating substrate is selected from the group consisting of silicon and gallium-arsenic.
References Cited (Backward Citations)
US2219497A
Cited
AT175076B
Cited
US3278843A
Cited
US3400331A
Cited
US3328653A
Cited
US3515987A
Cited
US3706919A
Cited
US4183060A
Cited
US4090092A
Cited
JPS5333652A
Cited
US4230967A
Cited
US4380040A
Cited
US4711128A
Cited
US4731694A
Cited
US4766368A
Cited
US4937694A
Cited
US5101669A
Cited
US4982333A
Cited
US5055838A
Cited
US5072190A
Cited
US5208544A
Cited
US5293131A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-30 | 1999-10-30 | 2000-04-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-30 | 2003-10-30 | 2004-04-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-30 | 2007-10-30 | 2008-04-30 | $7700.00 | Window Closed / Lapsed |