Patent CA496047A successfully refreshed from Google Patents.
US5512331A
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Etching method for indium series compound semiconductors
Assignee: Mitsubishi Electric Corp
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Filing: 1994-08-01
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Granted: 1996-04-30
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Expires: 2014-08-01
Abstract
Abstract An etching method for an In series compound semiconductor includes etching in a plasma etching of a flowing mixture of a halogen and nitrogen, the flow ratio of halogen to nitrogen being lower than 1, and at a gas pressure below 0.5 mTorr. An etching method for an In series compound semiconductor includes etching in a plasma etching apparatus and a mixture of halogen/inactive gas/nitrogen gas, the flow rate ratio of halogen/(halogen+inactive gas+nitrogen gas) being lower than 0.1, the flow rate ratio of nitrogen/(halogen+inactive gas+nitrogen gas) being above 0.1, and the gas pressure being below 0.5 mTorr. Etching at low ion energy produces good surface morphology, a vertical side surface configuration having an etched concave portion, and low damage.
Inventors
- 👤 Shinichi Miyakuni
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:39
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/126; H10P50/00; H10P50/20; H10P50/24; H10P50/246
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
46 words
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in a plasma in a flowing mixture of a halogen and nitrogen in which the halogen flows at a lower rate than the nitrogen and gas pressure is below 0.5 mTorr.
Claim 2
Independent Claim
46 words
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in a plasma in a flowing mixture of a halogen and nitrogen in which the halogen flows at a lower rate than the nitrogen and gas pressure is below 0.5 mTorr.
Claim 3
Dependent Claim
13 words
The etching method of claim 1 wherein the halogen is Cl 2 .
Claim 4
Independent Claim
60 words
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in a plasma in a flowing mixture of a halogen, an inactive .gas, and nitrogen in which halogen flow to (halogen+inactive gas+nitrogen gas) flow is lower than 0.1, nitrogen flow to (halogen+inactive gas+nitrogen gas) flow is above 0.1, and gas pressure is below 0.5 mTorr.
Claim 5
Independent Claim
60 words
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in a plasma in a flowing mixture of a halogen, an inactive .gas, and nitrogen in which halogen flow to (halogen+inactive gas+nitrogen gas) flow is lower than 0.1, nitrogen flow to (halogen+inactive gas+nitrogen gas) flow is above 0.1, and gas pressure is below 0.5 mTorr.
Claim 6
Dependent Claim
12 words
The etching method of claim 3 wherein the inactive gas is He.
Claim 7
Dependent Claim
13 words
The etching method of claim 3 wherein the halogen is Cl 2 .
Claim 8
Dependent Claim
13 words
The etching method of claim 4 wherein the halogen is Cl 2 .
Claim 9
Independent Claim
61 words
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in an electron cyclotron resonance plasma in a flowing mixture of chlorine and nitrogen in which chlorine flow to nitrogen flow is below 1, total gas flow is about 10 SCCM, gas pressure is below 0.5 mTorr, and the compound semiconductor substrate temperature is 100°-200° C.
Claim 10
Independent Claim
61 words
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in an electron cyclotron resonance plasma in a flowing mixture of chlorine and nitrogen in which chlorine flow to nitrogen flow is below 1, total gas flow is about 10 SCCM, gas pressure is below 0.5 mTorr, and the compound semiconductor substrate temperature is 100°-200° C.
Claim 11
Independent Claim
79 words
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in an electron cyclotron resonance plasma in a flowing mixture of a halogen, an inactive gas, and nitrogen in which halogen flow to (halogen+inactive gas+nitrogen gas) flow is lower than 0.1, nitrogen flow to (halogen+inactive gas+nitrogen gas) flow is above 0.1, gas pressure is below 0.5 mTorr, total gas flow rate is about 10 SCCM, and the compound semiconductor substrate temperature is 100°-200° C.
Claim 12
Independent Claim
79 words
A method for etching an In compound semiconductor comprising etching a compound semiconductor including In in an electron cyclotron resonance plasma in a flowing mixture of a halogen, an inactive gas, and nitrogen in which halogen flow to (halogen+inactive gas+nitrogen gas) flow is lower than 0.1, nitrogen flow to (halogen+inactive gas+nitrogen gas) flow is above 0.1, gas pressure is below 0.5 mTorr, total gas flow rate is about 10 SCCM, and the compound semiconductor substrate temperature is 100°-200° C.
References Cited (Backward Citations)
US5304514A
Cited
US5068007A
Cited
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