Ceramic semiconductor package having varying conductive bonds

Claim 2

A package for housing a semiconductor chip, comprised of: a heatsink comprised of copper; a first epoxy which is thermally conductive and electrically nonconductive chemically bonded to a portion of the heatsink; an insulative layer chemically bonded to the first epoxy; a second epoxy which is thermally conductive and electrically conductive chemically bonded to a first portion of the insulative layer; a third epoxy which is thermally conductive and electrically nonconductive chemically bonded to a second portion of the insulative layer; and a leadframe comprised of copper physically separated into at least a first and a second portion, wherein the first portion of the leadframe is chemically bonded to the second epoxy and the second portion of the leadframe is chemically bonded to the third epoxy.

Claim 3

The package of claim 1 further comprising: a fourth epoxy which is thermally conductive and electrically conductive chemically bonded to a third portion of the insulative layer; and a semiconductor chip chemically bonded to the fourth epoxy.

Claim 4

The package of claim 1 wherein the first epoxy and the third epoxy are comprised of a silica filled epoxy.

Claim 5

The package of claim 1 wherein the second epoxy is comprised of a silver filled epoxy.

Claim 6

The package of claim 2 wherein the fourth epoxy is comprised of a silver filled epoxy.

Claim 7

The package of claim 3 wherein the first epoxy and the third epoxy are comprised of a silica filled epoxy which is approximately greater than or equal to 75% silica.

Claim 8

The package of claim 4 wherein the second epoxy is comprised of a silver filled epoxy which is approximately 70-80% silver.

Claim 9

The package of claim 5 wherein the fourth epoxy is comprised of a silver filled epoxy which is approximately 70-80% silver.

Claim 10

The package of claim 1 wherein the insulative layer is comprised of aluminum nitride.

Claim 11

The package of claim 1 wherein the first, second, and third epoxy are approximately 10-125 microns thick.

Claim 12

The package of claim 2 wherein the fourth epoxy is approximately 10-125 microns thick.

Claim 13

A package for housing a semiconductor chip, comprised of: a heatsink comprised of copper; a first silica filled epoxy which is thermally conductive and electrically nonconductive chemically bonded to a portion of the heatsink; an insulative layer chemically bonded to the first epoxy; a first silver filled epoxy which is thermally conductive and electrically conductive chemically bonded to a first portion of the insulative layer; a second silica filled epoxy which is thermally conductive and electrically nonconductive chemically bonded to a second portion of the insulative layer; and a leadframe comprised of copper physically separated into at least a first and a second portion, wherein the first portion of the leadframe is chemically bonded to the first silver filled epoxy and the second portion of the leadframe is chemically bonded to the second silica filled epoxy.

Claim 14

A package for housing a semiconductor chip, comprised of: a heatsink comprised of copper; a first silica filled epoxy which is thermally conductive and electrically nonconductive chemically bonded to a portion of the heatsink; an insulative layer chemically bonded to the first epoxy; a first silver filled epoxy which is thermally conductive and electrically conductive chemically bonded to a first portion of the insulative layer; a second silica filled epoxy which is thermally conductive and electrically nonconductive chemically bonded to a second portion of the insulative layer; and a leadframe comprised of copper physically separated into at least a first and a second portion, wherein the first portion of the leadframe is chemically bonded to the first silver filled epoxy and the second portion of the leadframe is chemically bonded to the second silica filled epoxy.

Claim 15

The package of claim 12 further comprising: a second silver filled epoxy which is thermally conductive and electrically conductive chemically bonded to a third portion of the insulative layer; and a semiconductor chip chemically bonded to the second silver filled epoxy.

Claim 16

The package of claim 12 wherein the first silica filled epoxy and the second silica filled epoxy are comprised of a silica filled epoxy which is approximately greater than or equal to 75% silica.

Claim 17

The package of claim 12 wherein the first silver filled epoxy is comprised of a silver filled epoxy which is approximately 70-80% silver.

Claim 18

The package of claim 13 wherein the second silver filled epoxy is comprised of a silver filled epoxy which is approximately 70-80% silver.

Claim 19

The package of claim 12 wherein the insulative layer is comprised of aluminum nitride.

Claim 20

The package of claim 12 wherein the first and the second silica filled epoxy and the first silver filled epoxy are approximately 10-125 microns thick.

Claim 21

The package of claim 13 wherein the second silver filled epoxy is approximately 10-125 microns thick.

Claim 22

A package for housing a semiconductor chip, comprised of: a heatsink comprised of copper; a first epoxy which is thermally conductive and electrically nonconductive chemically bonded to a portion of the heatsink through a first oxide bond; an insulative layer comprised of aluminum-nitride chemically bonded to the first epoxy through a second oxide bond; a second epoxy which is thermally conductive and electrically conductive chemically bonded to a first portion of the insulative layer through a third oxide bond; a third epoxy which is thermally conductive and electrically nonconductive chemically bonded to a second portion of the insulative layer through a fourth oxide bond; and a leadframe comprised of copper physically separated into at least a first and a second portion, wherein the first portion of the leadframe is chemically bonded to the second epoxy through a fifth oxide bond and the second portion of the leadframe is chemically bonded to the third epoxy through a sixth oxide bond.

Claim 23

A package for housing a semiconductor chip, comprised of: a heatsink comprised of copper; a first epoxy which is thermally conductive and electrically nonconductive chemically bonded to a portion of the heatsink through a first oxide bond; an insulative layer comprised of aluminum-nitride chemically bonded to the first epoxy through a second oxide bond; a second epoxy which is thermally conductive and electrically conductive chemically bonded to a first portion of the insulative layer through a third oxide bond; a third epoxy which is thermally conductive and electrically nonconductive chemically bonded to a second portion of the insulative layer through a fourth oxide bond; and a leadframe comprised of copper physically separated into at least a first and a second portion, wherein the first portion of the leadframe is chemically bonded to the second epoxy through a fifth oxide bond and the second portion of the leadframe is chemically bonded to the third epoxy through a sixth oxide bond.

Claim 24

The package of claim 20 further comprising: a fourth epoxy which is thermally conductive and electrically conductive chemically bonded to a third portion of the insulative layer through a seventh oxide bond; and a semiconductor chip chemically bonded to the fourth epoxy through an eight oxide bond.

Claim 25

The package of claim 20 wherein the first epoxy and the third epoxy are comprised of a silica filled epoxy and the first and the sixth oxide bonds are comprised of CH 2 CHCH 2 NHR.OCu and the second and the fourth oxide bonds are comprised of CH 2 CHCH 2 NHR.O 3 Al 2 .

Claim 26

The package of claim 20 wherein the second epoxy is comprised of a silver filled epoxy and the third oxide bond is comprised of CH 2 CHCH 2 NHR.O 3 Al 2 and the fifth oxide bond is comprised of CH 2 CHCH 2 NHR.OCu.

Claim 27

The package of claim 21 wherein the fourth epoxy is comprised of a silver filled epoxy and the seventh oxide bond is comprised of CH 2 CHCH 2 NHR.O 3 Al 2 .

Claim 28

The package of claim 21 wherein the semiconductor chip is comprised of silicon and the eighth oxide bond is comprised of CH 2 CHCH 2 NHR.OSi.