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US5510281A
Expired / Lapsed
US
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Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
Assignee: General Electric Co
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Filing: 1995-03-20
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Granted: 1996-04-23
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Expires: 2015-03-20
Abstract
Abstract A method for fabricating a semiconductor device includes patterning a refractory dielectric layer over a semiconductor layer of a first conductivity type; conformally depositing a first spacer layer over the patterned refractory dielectric layer and the semiconductor layer; patterning the first spacer layer to leave a first spacer adjacent to an edge of the patterned refractory dielectric layer; implanting ions of a second conductivity type to form a base region in the semiconductor layer; conformally depositing a second spacer layer over the patterned refractory dielectric layer and the semiconductor layer; patterning the second spacer layer to leave a second spacer adjacent to an edge of the first spacer; implanting ions of the first conductivity type to form a source region in the base region; removing the first and second spacers; applying a gate insulator layer over at least a portion of the semiconductor layer; conformally depositing a gate electrode layer over the gate insulator layer and the semiconductor layer; and patterning the gate electrode layer to form a gate electrode portion adjacent to an edge of the patterned refractory dielectric layer. Preferably the step of conformally depositing the gate electrode layer includes depositing an electrically conductive layer having the same thickness as a combined width of the first and second spacers. In one embodiment the semiconductor layer includes silicon carbide, the patterned refractory dielectric layer includes silicon dioxide, the spacers include silicon nitride, and the gate electrode layer includes polysilicon.
Inventors
- 👤 Mario Ghezzo
- 👤 Tat-Sing P. Chow
- 👤 James W. Kretchmer
- 👤 Richard J. Saia
- 👤 William A. Hennessy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:56
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D12/00; H10D12/01; H10D12/031; H10D30/01; H10D30/021; H10D30/028; H10D30/0291; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/518; H10D64/519; H10D64/60; H10D64/62; H10D12/032
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
214 words
A method for fabricating a semiconductor device comprising: patterning a refractory dielectric layer over a semiconductor layer, the semiconductor layer comprising material of a first conductivity type; conformally depositing a first spacer layer over the patterned refractory dielectric layer and the semiconductor layer; patterning the first spacers layer to leave a first spacer layer portion adjacent to an edge of the patterned refractory dielectric layer, the first spacer portion comprising a first spacer; implanting ions to form a base region of a second conductivity type in the semiconductor layer; conformally depositing a second spacer layer over the patterned refractory dielectric layer, the first spacer, and the semiconductor layer; patterning the second spacer layer to leave a second spacer layer portion adjacent to an edge of the first spacer, the second spacer portion comprising a second spacer; implanting ions to form a source region of the first conductivity type in the base region; removing the first and second spacers; applying a gate insulator layer over at least a portion of the semiconductor layer; conformally depositing a gate electrode layer over the patterned refractory dielectric layer, the gate insulator layer and the semiconductor layer; and patterning the gate electrode layer to leave a gate electrode portion adjacent to an edge of the patterned refractory dielectric layer.
Claim 2
Independent Claim
214 words
A method for fabricating a semiconductor device comprising: patterning a refractory dielectric layer over a semiconductor layer, the semiconductor layer comprising material of a first conductivity type; conformally depositing a first spacer layer over the patterned refractory dielectric layer and the semiconductor layer; patterning the first spacers layer to leave a first spacer layer portion adjacent to an edge of the patterned refractory dielectric layer, the first spacer portion comprising a first spacer; implanting ions to form a base region of a second conductivity type in the semiconductor layer; conformally depositing a second spacer layer over the patterned refractory dielectric layer, the first spacer, and the semiconductor layer; patterning the second spacer layer to leave a second spacer layer portion adjacent to an edge of the first spacer, the second spacer portion comprising a second spacer; implanting ions to form a source region of the first conductivity type in the base region; removing the first and second spacers; applying a gate insulator layer over at least a portion of the semiconductor layer; conformally depositing a gate electrode layer over the patterned refractory dielectric layer, the gate insulator layer and the semiconductor layer; and patterning the gate electrode layer to leave a gate electrode portion adjacent to an edge of the patterned refractory dielectric layer.
Claim 3
Dependent Claim
35 words
The method of claim 1, wherein the step of conformally depositing the gate electrode layer comprises depositing a gate electrode layer having the same thickness as a combined width of the first and second spacers.
Claim 4
Dependent Claim
26 words
The method of claim 1, wherein the step of patterning the refractory dielectric layer over the semiconductor layer comprises applying and etching a silicon dioxide layer.
Claim 5
Dependent Claim
46 words
The method of claim 3, further including: prior to conformally depositing the first spacer layer, growing a first thermal oxide layer over the semiconductor layer; and after removing the first and second spacers and before applying the gate insulator layer, removing the first thermal oxide layer.
Claim 6
Dependent Claim
47 words
The method of claim 4, wherein the semiconductor layer comprises silicon carbide and wherein the steps of conformally depositing the first spacer layer and conformally depositing the second spacer layer comprise conformally depositing a first silicon nitride layer and conformally depositing a second silicon nitride layer, respectively.
Claim 7
Dependent Claim
19 words
The method of claim 5, wherein the step of conformally depositing the gate; electrode layer comprises conformally depositing polysilicon.
Claim 8
Dependent Claim
55 words
The method of claim 6, wherein the step of patterning the first spacer layer includes reactive ion etching the first spacer layer; the step of patterning the second spacer layer includes reactive ion etching the second spacer layer; and the step of patterning the gate electrode layer includes reactive ion etching the gate electrode layer.
Claim 9
Dependent Claim
31 words
The method of claim 7, wherein the step of conformally depositing polysilicon comprises depositing a polysilicon having the same thickness as a combined width of the first and second nitride layers.
Claim 10
Dependent Claim
31 words
The method of claim 7, further including, after implanting ions to form the source region, implanting ions of the second conductivity type to form a contact region in the base region.
Claim 11
Dependent Claim
59 words
The method of claim 7, wherein the gate electrode portion left after patterning the gate electrode layer comprises a first gate electrode portion and wherein the step of patterning the gate electrode layer further includes leaving a second gate electrode portion over a part of the patterned refractory dielectric layer, the first and second gate electrode portions being coupled.
Claim 12
Dependent Claim
167 words
The method of claim 10, wherein the semiconductor layer overlies a semiconductor substrate and further including: applying a second oxide layer over the semiconductor layer, the patterned refractory dielectric layer, and the gate electrode; forming a via aligned with a selected portion of the source region in the second oxide layer; applying an electrically conductive source contact over the source region; forming a via aligned with a selected portion of the base region in the second oxide layer; applying an electrically conductive base contact over the base region; forming a via aligned with a selected portion of the second gate electrode portion; applying an external layer of electrically conductive material over the second oxide layer and into the vias; and patterning the external layer to form two pads, a first pad coupling the source and base contacts and a second pad extending through the via aligned with the selected portion of the second gate electrode portion; and applying an electrically conductive drain layer adjacent to the substrate.
Claim 13
Dependent Claim
42 words
The method of claim 1, further including the step of implanting ions over at least a portion of the source and base regions to adjust the threshold voltage of the semiconductor device after the step of removing the first and second spacers.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-23 | 1999-10-23 | 2000-04-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-23 | 2003-10-23 | 2004-04-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-23 | 2007-10-23 | 2008-04-23 | $7700.00 | Window Closed / Lapsed |