Patent US5510011A successfully refreshed from Google Patents.
US5510011A
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Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature
Assignee: Canon Inc
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Filing: 1994-12-22
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Granted: 1996-04-23
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Expires: 2014-12-22
Abstract
Abstract In a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation thereon in a vacuum vessel with the use of a high frequency energy from a high frequency power source and sputtering said target with said plasma while applying a direct current voltage from a direct current power source to at least one of said target electrode or said substrate electrode thereby causing the formation of a film on said substrate, the improvement which comprises alternately repeating a deposition step and a non-deposition step, said deposition step comprising sputtering said target with said plasma while irradiating said substrate with ions of said plasma while depositing a film on said substrate, and said non-deposition step comprising irradiating said substrate with ions of said plasma without sputtering said target, thereby forming a high quality functional deposited film on said substrate.
Inventors
- 👤 Nobuyuki Okamura
- 👤 Atsushi Yamagami
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:39
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/3435; C23C14/345; H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32697; H01J37/32706; H01J37/34; H01J37/3402; H01J37/3405; H01J37/3464; H01J37/3473; H10; H10D; H10D10/00; H10D10/01; H10D10/051; H10D10/054; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
176 words
A process for forming a functional epitaxial film on a substrate by a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation thereon in a vacuum vessel with the use of a high frequency energy with a frequency of 50 MHz to 300 MHz from a high frequency power source and sputtering said target with said plasma while applying a direct current voltage from a direct current power source to at least one of said target electrode and said substrate electrode thereby causing the formation of a film on said substrate, wherein a deposition step and a non-deposition step are alternately repeated, said deposition step comprising sputtering said target with said plasma while irradiating said substrate with ions of said plasma while depositing a film on said substrate, and said non-deposition step comprising irradiating said substrate with ions of said plasma without sputtering said target, thereby forming a high quality functional epitaxial film on said substrate.
Claim 2
Dependent Claim
176 words
A process for forming a functional epitaxial film on a substrate by a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation thereon in a vacuum vessel with the use of a high frequency energy with a frequency of 50 MHz to 300 MHz from a high frequency power source and sputtering said target with said plasma while applying a direct current voltage from a direct current power source to at least one of said target electrode and said substrate electrode thereby causing the formation of a film on said substrate, wherein a deposition step and a non-deposition step are alternately repeated, said deposition step comprising sputtering said target with said plasma while irradiating said substrate with ions of said plasma while depositing a film on said substrate, and said non-deposition step comprising irradiating said substrate with ions of said plasma without sputtering said target, thereby forming a high quality functional epitaxial film on said substrate.
Claim 3
Dependent Claim
45 words
The process for forming a functional epitaxial film according to claim 1, wherein the direct current power source is electrically connected to the target electrode, and the deposition step and the non-deposition step are switched between each other by controlling the direct current power source.
Claim 4
Dependent Claim
23 words
The process for forming a functional epitaxial film according to claim 2, wherein the controlling comprises on-off controlling the direct current power source.
Claim 5
Dependent Claim
34 words
The process for forming a functional epitaxial film according to claim 2, wherein the controlling comprises generating a pulse signal using a microcomputer and inputting said pulse signal to the direct current power source.
Claim 6
Dependent Claim
29 words
The process for forming a functional epitaxial film according to claim 1, wherein a direct current voltage of -100 V to -500 V is applied to the target electrode.
Claim 7
Dependent Claim
30 words
The process for forming a functional epitaxial film according to claim 1, wherein the inside of the vacuum vessel is maintained at a pressure of 1 mTorr to 50 mTorr.
Claim 8
Dependent Claim
26 words
The process for forming a functional epitaxial film according to claim 1, wherein the substrate is maintained at a temperature of 250° C. to 500° C.
Claim 9
Dependent Claim
26 words
The process for forming a functional epitaxial film according to claim 7, wherein the substrate is maintained at a temperature of 250° C. to 380° C.
Claim 10
Dependent Claim
26 words
The process for forming a functional epitaxial film according to claim 1, wherein the functional epitaxial film formed on the substrate is an epitaxial silicon film.
Claim 11
Dependent Claim
93 words
The process for forming a functional epitaxial film according to claim 9, wherein the alternate repetition of the deposition step and the non-deposition step is conducted so as to satisfy the following two equations: Td≦5.43/N and Td≦Ta, with N being the deposition rate of the film deposited on the substrate in each deposition step, Td being the film formation period during which the film is deposited on the substrate in each deposition step, and Ta being the period during which the substrate is irradiated with ions of the plasma during each non-deposition step.
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