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Patent US5508532A successfully refreshed from Google Patents.
US5508532A
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Semiconductor device with braded silicon nitride
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1994-06-16
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Granted: 1996-04-16
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Expires: 2014-06-16
Abstract
Abstract A gate insulating film covering active layers of a insulated gate field effect semiconductor device utilizing a thin film silicon semiconductor comprises a thin film having the chemical formula SiO x N y . By making the concentration of N (nitrogen) high at the interface between the gate insulating film and the gate electrodes, it is possible to prevent the material composing the gate electrodes from being diffused in the gate insulating film. By making the concentration of N (nitrogen) high at the interface between the gate insulating film and the active layers, it is possible to prevent hydrogen ions and other ions from diffusing into the gate insulating film from the active layer.
Inventors
- 👤 Satoshi Teramoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 10:06
CPC Classifications
H; H10; H10D; H10D86/00; H10D86/40; H10B; H10B20/00; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6729; H10D30/6737; H10D30/6739; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D64/693; H10D86/60; H10D86/01; H10D86/021; H10D86/0221; H10D86/0223; H10D86/0225; Y; Y10; Y10S; Y10S148/00; Y10S148/114
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
70 words
An insulated gate field effect semiconductor device wherein a gate insulating film comprises a material represented as SiO x N y , and a distribution of N is varied in a thickness direction thereof so that a composition ratio of N at an interface between the gate insulating film and a gate electrode is higher than a composition ratio of N in a bulk portion of said gate insulating film.
Claim 2
Dependent Claim
70 words
An insulated gate field effect semiconductor device wherein a gate insulating film comprises a material represented as SiO x N y , and a distribution of N is varied in a thickness direction thereof so that a composition ratio of N at an interface between the gate insulating film and a gate electrode is higher than a composition ratio of N in a bulk portion of said gate insulating film.
Claim 3
Dependent Claim
20 words
The semiconductor device of claim 1 wherein the insulated gate field effect semiconductor device is formed on an insulating substrate.
Claim 4
Dependent Claim
40 words
The semiconductor device of claim 1 wherein an energy band gap of the material represented as SiO x N y is 5.3 to 7.0 eV, a dielectric constant is 4 to 6, and x and y satisfy 0<x<2, 0<y<4/3 respectively.
Claim 5
Dependent Claim
25 words
The semiconductor device of claim 1 wherein an active layer of the insulated gate field effect semiconductor device is formed on said gate insulating film.
Claim 6
Dependent Claim
36 words
An insulated gate field effect semiconductor device wherein a gate insulating film comprises a material represented as SiO x N y added with chlorine, and a distribution of N is varied in a thickness direction thereof.
Claim 7
Dependent Claim
36 words
An insulated gate field effect semiconductor device wherein a gate insulating film comprises a material represented as SiO x N y added with chlorine, and a distribution of N is varied in a thickness direction thereof.
Claim 8
Dependent Claim
40 words
The semiconductor device of claim 5 wherein an energy band gap of the material represented as SiO x N y is 5.3 to 7.0 eV, a dielectric constant is 4 to 6, and x and y satisfy 0<x<2, 0<y<4/3 respectively.
Claim 9
Dependent Claim
65 words
A semiconductor device wherein a gate insulating film is constituted by a thin film represented as SiO x N y , and a composition ratio of N varies in a thickness direction of said gate insulating film and is higher at an interface between said gate insulating layer and a gate electrode and at an interface between said gate insulating film and an active layer.
Claim 10
Dependent Claim
65 words
A semiconductor device wherein a gate insulating film is constituted by a thin film represented as SiO x N y , and a composition ratio of N varies in a thickness direction of said gate insulating film and is higher at an interface between said gate insulating layer and a gate electrode and at an interface between said gate insulating film and an active layer.
Claim 11
Dependent Claim
21 words
The semiconductor device of claim 7 wherein a metal element for promoting crystallization of silicon is included in the active layer.
Claim 12
Dependent Claim
18 words
The semiconductor device of claim 8 wherein the metal element is an element of penetration type to silicon.
Claim 13
Dependent Claim
35 words
The semiconductor device of claim 8 wherein one or more elements selected from the group consisting of Ni, Fe, Co, Ru, Pd, Os, Ir, Pt, Cu, Ag, and Au are utilized as the metal element.
Claim 14
Dependent Claim
19 words
The semiconductor device of claim 1 wherein an active layer of said semiconductor device comprises silicon and contains hydrogen.
Claim 15
Dependent Claim
19 words
The semiconductor device of claim 5 wherein an active layer of said semiconductor device comprises silicon and contains hydrogen.
Claim 16
Dependent Claim
19 words
The semiconductor device of claim 7 wherein said active layer of said semiconductor device comprises silicon and contains hydrogen.
Claim 17
Dependent Claim
73 words
An insulated gate field effect semiconductor device wherein a gate insulating film comprises a material represented as SiO x N y , and a distribution of N is varied in a thickness direction thereof, wherein a metal element for promoting crystallization of silicon is included in an active layer of said device, said metal element selected from the group consisting of Ni, Fe, Co, Ru, Pd, Os, Ir, Pt, Cu, Ag, and Au.
Claim 18
Dependent Claim
73 words
An insulated gate field effect semiconductor device wherein a gate insulating film comprises a material represented as SiO x N y , and a distribution of N is varied in a thickness direction thereof, wherein a metal element for promoting crystallization of silicon is included in an active layer of said device, said metal element selected from the group consisting of Ni, Fe, Co, Ru, Pd, Os, Ir, Pt, Cu, Ag, and Au.
Claim 19
Dependent Claim
20 words
The semiconductor device of claim 14 wherein the insulated gate field effect semiconductor device is formed on an insulating substrate.
Claim 20
Dependent Claim
40 words
The semiconductor device of claim 14 wherein an energy band gap of the material represented as SiO x N y is 5.3 to 7.0 eV, a dielectric constant is 4 to 6, and x and y satisfy 0<x<2, 0<y<4/3 respectively.
Claim 21
Dependent Claim
25 words
The semiconductor device of claim 14 wherein an active layer of the insulated gate field effect semiconductor device is formed on said gate insulating film.
Claim 22
Dependent Claim
19 words
The semiconductor device of claim 14 wherein an active layer of said semiconductor device comprises silicon and contains hydrogen.
References Cited (Backward Citations)
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