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US5508230A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for making a semiconductor device with diamond heat dissipation layer

Assignee: Apple Inc
•
Filing: 1995-04-04
•
Granted: 1996-04-16
•
Expires: 2015-04-04
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Abstract

Abstract A semiconductor device having improved heat dissipating capability is provided. The preferred device in accordance with the invention includes an electronic device (12) formed in a surface (14) of a semiconductor die (10). The surface (14) is covered with a layer of diamond (20). Openings (24) are provided in the diamond layer (20) for access to the electronic device. A metallized pad (26) is provided on top of the diamond layer (20). Additionally, solder bumps (28) pass through the openings (24) in the diamond layer (20). A die attach substrate (32) is attached to the metallized pad (26) and the bumps (28). Heat is dissipated uniformly across the diamond layer (20) and is drawn off the device through the metallized pad (26). Electrical connections are made to the device via the solder bumps (28).

Inventors

  • 👤 George F. Anderson
  • 👤 Randy L. Pollock

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 22:56
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/254; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/851; H10W72/874; H10W72/877

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 129 words
A method for making a flip-chip semiconductor device with improved heat dissipation, comprising the steps of: forming an active area in a top surface of a semiconductor die; forming a plurality of electric contact points on the top surface of the semiconductor die; depositing a film of diamond over the top surface of the semiconductor die; etching openings in the film of diamond which provide access to the plurality of electric contact points; contacting the film of diamond with a metallized pad; forming a plurality of electrically conductive elements, each of the plurality of electrically conductive elements contacting a corresponding electric contact point; and attaching a die attach substrate to the plurality of electrically conductive elements, wherein the top surface of the semiconductor die faces the die attach substrate.
Claim 2
Independent Claim 129 words
A method for making a flip-chip semiconductor device with improved heat dissipation, comprising the steps of: forming an active area in a top surface of a semiconductor die; forming a plurality of electric contact points on the top surface of the semiconductor die; depositing a film of diamond over the top surface of the semiconductor die; etching openings in the film of diamond which provide access to the plurality of electric contact points; contacting the film of diamond with a metallized pad; forming a plurality of electrically conductive elements, each of the plurality of electrically conductive elements contacting a corresponding electric contact point; and attaching a die attach substrate to the plurality of electrically conductive elements, wherein the top surface of the semiconductor die faces the die attach substrate.
Claim 3
Dependent Claim 21 words
The method of claim 1, wherein the step of depositing the film of diamond comprises forming a film of amorphous diamond.
Claim 4
Dependent Claim 18 words
The method of claim 1, wherein the step of depositing the film of diamond comprises depositing polycrystalline diamond.
Claim 5
Dependent Claim 18 words
The method of claim 1, wherein the step of etching openings comprises etching the openings with oxygen plasma.
Claim 6
Dependent Claim 46 words
The method of claim 1, wherein the step of attaching the die attach substrate further comprises attaching the die attach substrate to the plurality of electrically conductive elements with electrically conductive material and attaching the die attach substrate to the metallized pad with a heat-conducting material.

References Cited (Backward Citations)

US4689583A Cited
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US4764804A Cited
JPH0377355A Cited
US5074947A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-04-16 1999-10-16 2000-04-16 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-04-16 2003-10-16 2004-04-16 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-04-16 2007-10-16 2008-04-16 $7700.00 Window Closed / Lapsed

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