US5128006A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Deposition of diamond films on semicondutor substrates
Assignee: Nokia Bell Labs
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Filing: 1991-01-23
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Granted: 1992-07-07
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Expires: 2011-01-23
Abstract
Abstract Process for coating articles with thin film of diamond, and related diamond-like materials, using an electrophoretic technique. Diamond particles are suspended in a liquid electrolyte and subjected to a directional field which causes migration and deposition on a selected substrate electrode.
Inventors
- 👤 James W. Mitchell
- 👤 Jorge L. Valdes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 06:29
CPC Classifications
C; C25; C25D; C25D13/00; C25D13/02
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
84 words
Process for depositing a patterned diamond layer on a silicon substrate comprising the steps of: forming an oxide layer on the silicon substrate, photolithographically patterning the oxide layer to form regions of exposed silicon, immersing the patterned silicon substrate in a suspension consisting essentially of diamond particulates in pure water, subjecting the patterned silicon substrate to an externally applied electric field for a period of time and with a voltage sufficient to electrophoretically deposit diamond particulates on the exposed regions of the silicon substrate.
Claim 2
Dependent Claim
84 words
Process for depositing a patterned diamond layer on a silicon substrate comprising the steps of: forming an oxide layer on the silicon substrate, photolithographically patterning the oxide layer to form regions of exposed silicon, immersing the patterned silicon substrate in a suspension consisting essentially of diamond particulates in pure water, subjecting the patterned silicon substrate to an externally applied electric field for a period of time and with a voltage sufficient to electrophoretically deposit diamond particulates on the exposed regions of the silicon substrate.
Claim 3
Dependent Claim
11 words
Process of claim 1 in which the silicon substrate is p-type.
References Cited (Backward Citations)
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Cited
US3766125A
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US3929590A
Cited
US4504519A
Cited
US4767517A
Cited
US4490229A
Cited
US4822466A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-07 | 1996-01-06 | 1996-07-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-07 | 2000-01-06 | 2000-07-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-07 | 2004-01-06 | 2004-07-07 | $7700.00 | Window Closed / Lapsed |