Abstract An ESD protection device is disclosed having a first region of a first conductivity type. A second region, which is heavily doped, of a second conductivity type is disposed in the first region. The second region extends from the surface of the first region a first depth. A third region, which is heavily doped, of the second conductivity type, is also disposed in the first region such that the third region is separated from the second region by a portion of the surface of the first region. The third region extends from the surface of the first region a second depth less than the first depth of the second region. An insulating region is grown on a portion of the surface of the first region between the second and third regions. Furthermore, a resistive conducting region is disposed on the second region and the insulating region. A portion of the resistive conducting region extends beyond the second region for receiving an input signal.
A method for manufacturing an ESD protective device comprising the steps of: forming a first region of a first conductivity type within a substrate, forming a layer of insulating material over a surface of said first region, etching said insulating material to form at least one insulating region, forming a resistive conducting region over said at least one insulating region, deep diffusing a second region of a heavily doped second conductivity type to a first depth within said first region below at least part of said resistive conducting region, and diffusing within said first region, a third region of the heavily doped second conductivity type, to a second depth less than said first depth, said third region being separated from said second region by at least part of a surface of said first region below at least one of said at least one insulating region.
Claim 2
Independent Claim
145 words
A method for manufacturing an ESD protective device comprising the steps of: forming a first region of a first conductivity type within a substrate, forming a layer of insulating material over a surface of said first region, etching said insulating material to form at least one insulating region, forming a resistive conducting region over said at least one insulating region, deep diffusing a second region of a heavily doped second conductivity type to a first depth within said first region below at least part of said resistive conducting region, and diffusing within said first region, a third region of the heavily doped second conductivity type, to a second depth less than said first depth, said third region being separated from said second region by at least part of a surface of said first region below at least one of said at least one insulating region.
Claim 3
Dependent Claim
29 words
The method of claim 1 further comprising the step of forming said second region by thermal diffusion of an impurity from said resistive conducting region into said first region.
Claim 4
Dependent Claim
13 words
The method of claim 1 wherein said first region is connected to ground.