Patent US5506441A successfully refreshed from Google Patents.
US5506441A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having pair of transistors
Assignee: Mitsumi Electric Co Ltd
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Filing: 1995-03-24
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Granted: 1996-04-09
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Expires: 2015-03-24
Abstract
Abstract A semiconductor device includes a plurality of groups of transistor elements which are formed on a single semiconductor chip, each group having a first pair of transistor elements which are arranged so as to be symmetrical about a point and a second pair of transistor elements which are arranged, in a direction perpendicular to a direction in which the first pair of transistor elements are arranged, so as to be symmetrical about the point. The first pair of transistor elements in all the plurality of groups are connected in parallel so that a first transistor is formed of the first pair of transistor elements, and the second pair of transistor elements in all the plurality of groups are connected in parallel so that a second transistor is formed of the second pair of transistor elements, the first transistor and the second transistor being paired.
Inventors
- 👤 Misao Furuya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:29
CPC Classifications
H; H10; H10D; H10D89/00; H03; H03F; H03F3/00; H03F3/45; H03F3/45071; H03F3/45076; H03F3/4508; H03F3/45085; H03F3/45179; H03F3/45183; H03F2203/00; H03F2203/45; H03F2203/45371; H03F2203/45674; Y; Y10; Y10S; Y10S257/00; Y10S257/925
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
186 words
A semiconductor device comprising: a plurality of groups of transistor elements which are formed on a single semiconductor chip in a matrix of rows and columns, each group having a first pair of transistor elements which are arranged so as to be symmetrical about a point and a second pair of transistor elements which are arranged, in a direction perpendicular to a direction in which said first pair of transistor elements are arranged, so as to be symmetrical about the point; means for connecting said first pair of transistor elements in all said plurality of groups in parallel so that a first transistor for said device is formed of said first pairs of transistor elements such that no two parallel connected transistor elements are in juxtaposition; and means for connecting said second pair of transistor elements in all said plurality of groups in parallel so that a second transistor for said device is formed of said second pairs of transistor elements such that no two parallel connected transistor elements are in juxtaposition, said first transistor and said second transistor being connected to form a transistor pair.
Claim 2
Dependent Claim
186 words
A semiconductor device comprising: a plurality of groups of transistor elements which are formed on a single semiconductor chip in a matrix of rows and columns, each group having a first pair of transistor elements which are arranged so as to be symmetrical about a point and a second pair of transistor elements which are arranged, in a direction perpendicular to a direction in which said first pair of transistor elements are arranged, so as to be symmetrical about the point; means for connecting said first pair of transistor elements in all said plurality of groups in parallel so that a first transistor for said device is formed of said first pairs of transistor elements such that no two parallel connected transistor elements are in juxtaposition; and means for connecting said second pair of transistor elements in all said plurality of groups in parallel so that a second transistor for said device is formed of said second pairs of transistor elements such that no two parallel connected transistor elements are in juxtaposition, said first transistor and said second transistor being connected to form a transistor pair.
Claim 3
Dependent Claim
29 words
The semiconductor device as claimed in claim 1, wherein said semiconductor device is a differential amplifier having differential input transistors formed of said first transistor and said second transistor.
Claim 4
Dependent Claim
48 words
The semiconductor device as claimed in claim 1, wherein said semiconductor device is a differential amplifier having differential input transistors and a current mirror circuit formed of said first transistor and said second transistor, said current mirror circuit being connected to said differential transistors as a load thereof.
Claim 5
Dependent Claim
18 words
The semiconductor device as claimed in claim 1, wherein each of said transistor elements is a bipolar transistor.
Claim 6
Dependent Claim
18 words
The semiconductor device as claimed in claim 1, wherein each of said transistor elements is a MOS transistor.
Claim 7
Dependent Claim
59 words
The semiconductor device as claimed in claim 2, wherein said semiconductor device is a differential amplifier having a current mirror circuit connected to said differential input transistors, and wherein said current mirror circuit is formed of second and third transistors formed of a plurality of groups of transistor elements in the same manner as said first and second transistors.
References Cited (Backward Citations)
DE1665493A1
Cited
US5289040A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-04-09 | 1999-10-09 | 2000-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-09 | 2003-10-09 | 2004-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-09 | 2007-10-09 | 2008-04-09 | $7700.00 | Window Closed / Lapsed |