Semiconductor device with two different threshold voltages

Claim 2

A semiconductor MOSFET device including a doped semiconductor substrate with a P-well and an N-well and field oxide structures on the surface of said P-well and said N-well separating the surfaces of said P-well and said N-well into separate regions and a silicon dioxide film on the reminder of the surface of said P-well and said N-well comprising: an additional field oxide structure having two sides formed on the surface of said P-well, a field implant, lightly doped, P- region deeply implanted in said substrate extending across said P-well in; region from one side of said additional field oxide structure to one of said field oxide structures, a field implant lightly doped P- region deeply implanted in said P-well from the other side of said additional field oxide structure extending to another of said field oxide structures with a gap where said lightly doped P- region is absent between said other side of said of said additional field oxide structures and said another field oxide structure, with said lightly doped field implant region deeply implanted below all said field oxide structures in said P-well in said substrate, field ion implanted regions of V t ' ions in said P-well, a blanket ion implanted region of V t1 ions in said entire device.

Claim 3

A device in accordance with claim 1 wherein said V t ' ions are selected from the group consisting of B 11 and BF 2 with a dose between about 5×E11 cm -2 and about 5×E12 cm -2 .

Claim 4

A device in accordance with claim 1 wherein said V t1 ions consist of BF 2 with a dose between about 8×E11 cm -2 and about 5×E12 cm -2 .

Claim 5

A device in accordance with claim 2 wherein said V t1 ions consist of BF 2 with a dose between about 8×E11 cm -2 and about 5×E12 cm -2 .

Claim 6

A device in accordance with claim 1 wherein said V t1 ions are selected from the group consisting of P 31 and As+ and with a dose between about 5×E11 cm -2 and about 5×E12.

Claim 7

A device in accordance with claim 2 wherein said V t1 ions are selected from the group consisting of P 31 and As+ and with a dose between about 5×E11 cm -2 and about 5×E12.

Claim 8

A device in accordance with claim 3 wherein said V t1 ions are selected from the group consisting of P 31 and As+ and with a dose between about 5×E11 cm -2 and about 5×E12.

Claim 9

A device in accordance with claim 4 wherein said V t1 ions are selected from the group consisting of P 31 and As+ and, with a dose between about 5×E11 cm -2 and about 5×E12.

Claim 10

A device in accordance with claim 1 wherein said field implant comprises B 11 dopant.

Claim 11

A device in accordance with claim 2 wherein said field implant comprises B 11 dopant.

Claim 12

A device in accordance with claim 3 wherein said field implant comprises B 11 dopant.

Claim 13

A device in accordance with claim 4 wherein said field implant comprises B 11 dopant.

Claim 14

A device in accordance with claim 5 wherein said field implant comprises B 11 dopant.

Claim 15

A device in accordance with claim 6 wherein said field implant comprises B 11 dopant.

Claim 16

A device in accordance with claim 7 wherein said field implant comprises B 11 dopant.

Claim 17

A semiconductor MOSFET device formed on a doped semiconductor substrate with a P-well and an N-well and field oxide structures on the surface of the P-well and the N-well separating the surfaces of the P-well and the N-well into separate regions and a silicon dioxide film on the remainder of the surface of the P-well and the N-well, an additional field oxide structure having two sides formed on the surface of said P-well, a field implant, lightly doped P- region deeply implanted in said substrate extending across said P-well in a region from one side of said additional field oxide structure to one of said field oxide structures, a field implant lightly doped P- region deeply implanted in said substrate across said P-well on the other side of said additional field oxide structure extending to another of said field oxide structures with a gap where said lightly doped P- region is absent between said other side of said additional field oxide structure and said another field oxide structure, with said lightly doped field implant region deeply implanted below all said field oxide structures in said P-well in said substrate, a field ion implanted region of V t ' ions in said P-well implanted through a mask over the N-well and having been implanted through an under sized mask over one of the separate regions of the P-well, and a blanket ion implanted region of V t1 ions in said entire device.

Claim 18

A semiconductor MOSFET device formed on a doped semiconductor substrate with a P-well and an N-well and field oxide structures on the surface of the P-well and the N-well separating the surfaces of the P-well and the N-well into separate regions and a silicon dioxide film on the remainder of the surface of the P-well and the N-well, an additional field oxide structure having two sides formed on the surface of said P-well, a field implant, lightly doped P- region deeply implanted in said substrate extending across said P-well in a region from one side of said additional field oxide structure to one of said field oxide structures, a field implant lightly doped P- region deeply implanted in said substrate across said P-well on the other side of said additional field oxide structure extending to another of said field oxide structures with a gap where said lightly doped P- region is absent between said other side of said additional field oxide structure and said another field oxide structure, with said lightly doped field implant region deeply implanted below all said field oxide structures in said P-well in said substrate, a field ion implanted region of V t ' ions in said P-well implanted through a mask over the N-well and having been implanted through an under sized mask over one of the separate regions of the P-well, and a blanket ion implanted region of V t1 ions in said entire device.

Claim 19

A device in accordance with claim 16 wherein said V t ' ions are selected from the group consisting of B 11 and BF 2 with a dose between about 5×E11 cm -2 and about 5×E12 cm -2 .

Claim 20

A device in accordance with claim 17 wherein said V t1 ions consist of BF 2 with a dose between about 8×E11 cm -2 and about 5×E12 cm -2 .

Claim 21

A device in accordance with claim 18 wherein said field implant comprises B 11 dopant.

Claim 22

A device in accordance with claim 16 wherein said V t1 ions are selected from the group consisting of P 31 and As+ and with a dose between about 5×E11 cm -2 and about 5×E12.