Abstract Chalcopyrite compound semiconductor thin films represented by I-III-VI2-xVx or I-III-VI2-xVIIx, and semiconductor devices having a I-III-VI2/I-III-VI2-xVx or I-III-VI2/I-III-VI2-xVIIx chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI2 chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto.
A semiconductor device having a chalcopyrite homojunction between a first chalcopyrite thin film represented by I-III-VI 2 wherein some atoms of the VI group are replaced with group V atoms and a second chalcopyrite thin film represented by I-III-VI 2 wherein some atoms of the VI group are replaced with group VII atoms.
Claim 2
Dependent Claim
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A semiconductor device having a chalcopyrite homojunction between a first chalcopyrite thin film represented by I-III-VI 2 wherein some atoms of the VI group are replaced with group V atoms and a second chalcopyrite thin film represented by I-III-VI 2 wherein some atoms of the VI group are replaced with group VII atoms.
Claim 3
Dependent Claim
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The semiconductor device according to claim 1, wherein the first chalcopyrite thin film has a thickness of about 10 -6 m, and the second chalcopyrite thin film has a thickness of about 5×10 -7 m.