US4004342A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fabrication of ion implanted P-N junction devices
Assignee: United States Department of the Air Force
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Filing: 1976-02-23
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Granted: 1977-01-25
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Expires: 1996-02-23
Abstract
Abstract Light emitters and photovoltaic detectors are fabricated by ion implantation of cadmium, zinc, bromine or chlorine ions into a p-type CuInSe 2 substrate so as to form a p-n semiconductor junction.
Inventors
- 👤 Yoon Soo Park
- 👤 Phil Won Yu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 18:26
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10F; H10F10/00; H10F10/10; H10F10/14; H10F77/00; H10F77/10; H10F77/12; H10F77/126; H10F77/1265; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/21; H10P30/28; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541; Y02E10/547
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
127 words
A method of fabricating a p-n or p-i-n junction device in a p-type CuInSe 2 single crystal having a first (112) plane surface and a second (112) plane surface which comprises the steps of: a. bombarding the first plane surface with cadmium, zinc, bromine or chlorine ions at an energy of 135 keV to a dose level ranging from about 10 14 to 10 16 per square centimeter, thereby forming an n-type layer in the crystal adjacent the first plane surfacae; b. annealing the crystal under a vacuum at a temperature ranging from 300° to 500° C for a period of 10 to 30 minutes; c. depositing an indium-tin alloy electrical contact on the first surface; and d. depositing a gold electrical contact on the second surface.
Claim 2
Independent Claim
127 words
A method of fabricating a p-n or p-i-n junction device in a p-type CuInSe 2 single crystal having a first (112) plane surface and a second (112) plane surface which comprises the steps of: a. bombarding the first plane surface with cadmium, zinc, bromine or chlorine ions at an energy of 135 keV to a dose level ranging from about 10 14 to 10 16 per square centimeter, thereby forming an n-type layer in the crystal adjacent the first plane surfacae; b. annealing the crystal under a vacuum at a temperature ranging from 300° to 500° C for a period of 10 to 30 minutes; c. depositing an indium-tin alloy electrical contact on the first surface; and d. depositing a gold electrical contact on the second surface.
Claim 3
Dependent Claim
38 words
The method according to claim 1 in which the crystal is annealed under a vacuum at a temperature ranging from 350° to 500° C for a period of 10 to 30 minutes, thereby forming a p-n junction device.
Claim 4
Dependent Claim
30 words
The method according to claim 1 in which the crystal is annealed under a vacuum at a temperature ranging from 300° to 350° C, thereby forming a p-i-n junction device.
Claim 5
Dependent Claim
16 words
The method according to claim 1 in which the device is an electroluminescent p-n junction diode.
Claim 6
Dependent Claim
27 words
The method according to claim 1 in which the device is a photvoltaic effect p-n or p-i-n junction diode and in which the bombarding material is cadmium.
References Cited (Backward Citations)
US3767471A
Cited
US3940847A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-25 | 1980-07-26 | 1981-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-25 | 1984-07-26 | 1985-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-25 | 1988-07-26 | 1989-01-25 | $7700.00 | Window Closed / Lapsed |