Method of fabricating ion implanted znse p-n junction devices

Claim 1

A method of fabricating a P-N junction device in an aluminum doped n-type ZnSe single crystal having a first (110) plane surface and a second (110) plane surface comprising the steps of: a. heat treating the said crystal in molten zinc for approximately 24 hours at approximately 900°C; b. implanting a p-type layer on the said first surface by directing a phosphorus ion beam having an energy within the range from 70 to 500 keV on the said first surface providing a dosage from 10 16 to 10 14 per square centimeter; c. annealing the said crystal at a temperature within the range from approximately 400° centigrade to approximately 650° centigrade for approximately five to ten minutes; d. depositing a gold electrical contact on the said implanted p-type layer; and e. ultrasonic soldering an indium electrical contact to the said second surface.

Claim 2

A method of fabricating a P-N junction device in an aluminum doped n-type ZnSe single crystal having a first (110) plane surface and a second (110) plane surface comprising the steps of: a. heat treating the said crystal in molten zinc for approximately 24 hours at approximately 900°C; b. implanting a p-type layer on the said first surface by directing a phosphorus ion beam having an energy within the range from 70 to 500 keV on the said first surface providing a dosage from 10 16 to 10 14 per square centimeter; c. annealing the said crystal at a temperature within the range from approximately 400° centigrade to approximately 650° centigrade for approximately five to ten minutes; d. depositing a gold electrical contact on the said implanted p-type layer; and e. ultrasonic soldering an indium electrical contact to the said second surface.

Claim 3

A method of fabricating a P-N junction semiconductor device in an aluminum doped n-type ZnSe single crystal having a first (110) plane surface and a second (110) plane surface comprising the steps of: a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900°C; b. mechanically polishing the said first surface; c. etching both the said first and second surfaces in two parts H 2 SO 4 and three parts K 2 Cr 2 O 7 for approximately one minute at a temperature within the range of 70°C to 90°C; d. rinsing the said crystal in approximately 25 percent by weight solution of boiling NaOH for approximately twenty seconds; e. rinsing the said crystal in boiling trichloroethylene; f. rinsing the said crystal in acetone; g. rinsing the said crystal in boiling methanol; h. rinsing the said crystal in deionized water; i. implanting a p-type layer on the said first surface at room temperature by directing a phosphorus ion beam having an energy level within the range of 70 keV to 500 keV with dosages within the range from 10 16 to 10 14 per square centimeter; j. annealing the said crystal at a temperature within the range of 400° centigrade to 650° centigrade for a time within the range of five to ten minutes; k. depositing a gold electrical contract on the said implanted p-type layer on the first surface by sputtering or evaporation; and l. ultrasonic soldering an indium electrical contact to the said second surface.

Claim 4

A method of fabricating a P-N junction semiconductor device in an aluminum doped n-type ZnSe single crystal having a first (110) plane surface and a second (110) plane surface comprising the steps of: a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900°C; b. mechanically polishing the said first surface; c. etching both the said first and second surfaces in two parts H 2 SO 4 and three parts K 2 Cr 2 O 7 for approximately one minute at a temperature within the range of 70°C to 90°C; d. rinsing the said crystal in approximately 25 percent by weight solution of boiling NaOH for approximately twenty seconds; e. rinsing the said crystal in boiling trichloroethylene; f. rinsing the said crystal in acetone; g. rinsing the said crystal in boiling methanol; h. rinsing the said crystal in deionized water; i. implanting a p-type layer on the said first surface at room temperature by directing a phosphorus ion beam having an energy level within the range of 70 keV to 500 keV with dosages within the range from 10 16 to 10 14 per square centimeter; j. annealing the said crystal at a temperature within the range of 400° centigrade to 650° centigrade for a time within the range of five to ten minutes; k. depositing a gold electrical contract on the said implanted p-type layer on the first surface by sputtering or evaporation; and l. ultrasonic soldering an indium electrical contact to the said second surface.

Claim 5

A method of fabricating an electroluminescent semiconductor P-N junction diode in a ZnSe single crystal doped with aluminum providing an n-type crystal having an aluminum concentration of approximately 10 parts per million, the said aluminum doped crystal having a first (110) plane surface and a second (110) plane surface, the said method comprising the steps of: a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900°C providing a carrier concentration per cubic centimeter of approximately 10 17 , and an ohm-cm resistivity of approximately 0.10; b. implanting at room temperature a p-type layer on the said first surface by directing a phosphorus ion beam having an energy of approximately 400 keV on the said first surface providing a dosage of approximately 10 14 per square centimeter; c. annealing the said crystal at a temperature of approximately 450°C to 500°C in argon gas at atmospheric pressure for approximately 5 minutes; d. depositing a gold electrical contact on the said implanted p-type layer; and e. ultrasonic soldering an indium electrical contact to the said second surface.

Claim 6

A method of fabricating an electroluminescent semiconductor P-N junction diode in a ZnSe single crystal doped with aluminum providing an n-type crystal having an aluminum concentration of approximately 10 parts per million, the said aluminum doped crystal having a first (110) plane surface and a second (110) plane surface, the said method comprising the steps of: a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900°C providing a carrier concentration per cubic centimeter of approximately 10 17 , and an ohm-cm resistivity of approximately 0.10; b. implanting at room temperature a p-type layer on the said first surface by directing a phosphorus ion beam having an energy of approximately 400 keV on the said first surface providing a dosage of approximately 10 14 per square centimeter; c. annealing the said crystal at a temperature of approximately 450°C to 500°C in argon gas at atmospheric pressure for approximately 5 minutes; d. depositing a gold electrical contact on the said implanted p-type layer; and e. ultrasonic soldering an indium electrical contact to the said second surface.

Claim 7

A method of fabricating a switching with memory P-N junction diode in a ZnSe single crystal doped with aluminum providing an n-type crystal having an aluminum concentration of approximately 10 parts per million, the said aluminum doped crystal having a first (110) plane surface and a second (110) plane surface, the said method comprising the steps of: a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900°C providing a carrier concentration per cubic centimeter of approximately 10 18 , and an ohm-cm resistivity of approximately 0.01; b. implanting at room temperature a p-type layer on the said first surface by directing a phosphorus ion beam having an energy of approximately 90 keV on the said first surface providing a dosage of approximately 10 16 per square centimeter; c. annealing the said crystal at a temperature of approximately 500°C for 5 minutes in air; d. depositing a gold electrical contact on the said implanted p-type layer; and e. ultrasonic soldering an indium electrical contact to the said second surface.

Claim 8

A method of fabricating a switching with memory P-N junction diode in a ZnSe single crystal doped with aluminum providing an n-type crystal having an aluminum concentration of approximately 10 parts per million, the said aluminum doped crystal having a first (110) plane surface and a second (110) plane surface, the said method comprising the steps of: a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900°C providing a carrier concentration per cubic centimeter of approximately 10 18 , and an ohm-cm resistivity of approximately 0.01; b. implanting at room temperature a p-type layer on the said first surface by directing a phosphorus ion beam having an energy of approximately 90 keV on the said first surface providing a dosage of approximately 10 16 per square centimeter; c. annealing the said crystal at a temperature of approximately 500°C for 5 minutes in air; d. depositing a gold electrical contact on the said implanted p-type layer; and e. ultrasonic soldering an indium electrical contact to the said second surface.

Claim 9

A method of fabricating a P-N junction backward diode in a ZnSe single crystal doped with aluminum providing an n-type crystal having an aluminum concentration of approximately 1000 parts per million, the said aluminum doped crystal having a first (110) plane surface and a second (110) plane surface, the said method comprising the steps of: a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900°C providing a carrier concentration per cubic centimeter of approximately 10 19 , and an ohm-cm resistivity of approximately 0.001; b. implanting at room temperature a p-type layer on the said first surface by directing a phosphorus ion beam having an energy of approximately 90 keV on the said first surface providing a dosage of approximately 10 16 per square centimeter; c. annealing the said crystal at a temperature of approximately 600°C in argon gas at atmospheric pressure for approximately 10 minutes; d. depositing a gold electrical contact on the said implanted p-type layer; and e. ultrasonic soldering an indium electrical contact to the said second surface.

Claim 10

A method of fabricating a P-N junction backward diode in a ZnSe single crystal doped with aluminum providing an n-type crystal having an aluminum concentration of approximately 1000 parts per million, the said aluminum doped crystal having a first (110) plane surface and a second (110) plane surface, the said method comprising the steps of: a. heat treating the said crystal in molten zinc for approximately 24 hours at a temperature of approximately 900°C providing a carrier concentration per cubic centimeter of approximately 10 19 , and an ohm-cm resistivity of approximately 0.001; b. implanting at room temperature a p-type layer on the said first surface by directing a phosphorus ion beam having an energy of approximately 90 keV on the said first surface providing a dosage of approximately 10 16 per square centimeter; c. annealing the said crystal at a temperature of approximately 600°C in argon gas at atmospheric pressure for approximately 10 minutes; d. depositing a gold electrical contact on the said implanted p-type layer; and e. ultrasonic soldering an indium electrical contact to the said second surface.