US5506173A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process of fabricating a dielectric film for a semiconductor device
Assignee: Micron Memory Japan Ltd
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Filing: 1992-10-07
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Granted: 1996-04-09
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Expires: 2012-10-07
Abstract
Abstract A method of processing an insulating film containing voids associated with the increased semiconductor device density is performed. An insulating film containing voids is coated with another insulating film by spin-on technique to substantially close up the voids, followed by photolithography process. By the processing without adverse affects from the presence of voids, for example, an undamaged cover film can formed, which can contribute to greater reliability of semiconductor devices.
Inventors
- 👤 Shozo Nishimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:51
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; G; G03; G03F; G03F7/00; G03F7/0035; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H10P14/68; H10P14/683
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
224 words
A process of fabricating a semiconductor device comprising the steps of: covering a semiconductor substrate with a dielectric layer, said dielectric layer having a first portion, a second portion and a third portion between said first and second portions; forming first and second conductive lead layers on said first and second portions of said dielectric layer, respectively; covering said first and second conductive lead layers and said dielectric layer with an insulating film such that said insulating film has a substantially even surface over said first and second conductive layers and said third portion of said dielectric layer, said third portion of said dielectric layer has such a width that a void is formed in a part of said insulting film covering said third portion of said dielectric layer; coating a first photoresist film on said insulating film while filling said void with a portion of said first photoresist film; exposing said first photoresist film, said insulting film surrounding said void preventing exposure of said portion of said first photoresist film; removing said first photoresist film to expose said insulating film while leaving said void filled with said portion said first photoresist film; coating a second photoresist film on said insulting film in contact with said portion of said first photoresist film filling said void; and selectively subjecting said second photoresist film to exposure.
Claim 2
Dependent Claim
224 words
A process of fabricating a semiconductor device comprising the steps of: covering a semiconductor substrate with a dielectric layer, said dielectric layer having a first portion, a second portion and a third portion between said first and second portions; forming first and second conductive lead layers on said first and second portions of said dielectric layer, respectively; covering said first and second conductive lead layers and said dielectric layer with an insulating film such that said insulating film has a substantially even surface over said first and second conductive layers and said third portion of said dielectric layer, said third portion of said dielectric layer has such a width that a void is formed in a part of said insulting film covering said third portion of said dielectric layer; coating a first photoresist film on said insulating film while filling said void with a portion of said first photoresist film; exposing said first photoresist film, said insulting film surrounding said void preventing exposure of said portion of said first photoresist film; removing said first photoresist film to expose said insulating film while leaving said void filled with said portion said first photoresist film; coating a second photoresist film on said insulting film in contact with said portion of said first photoresist film filling said void; and selectively subjecting said second photoresist film to exposure.
Claim 3
Dependent Claim
36 words
The process as claimed in claim 1, wherein said step of removing said first photoresist film includes the step of developing a remaining portion of said first photoresist except said portion of said first photoresist film.
Claim 4
Dependent Claim
17 words
The process as claimed in claim 2, wherein said first photoresist film is of a positive type.
Claim 5
Dependent Claim
138 words
A process for fabricating a semiconductor device comprising the steps of: forming an insulating film over a semiconductor substrate, said insulating film including a void therein; coating a first photoresist film on said insulating film while filling said void with a portion said first photoresist film; exposing said first photoresist film while said portion of said first photoresist film is protected from exposure by said insulating film surrounding said void; developing said first photoresist film to remove said first photoresist film so that said insulating film is exposed with laving said void filled with said first portion of said first photoresist film; coating a second photoresist film on said insulating film in contact with said portion of said first photoresist film; and forming a hole in said second photoresist film to expose a part of said insulating film.
Claim 6
Dependent Claim
138 words
A process for fabricating a semiconductor device comprising the steps of: forming an insulating film over a semiconductor substrate, said insulating film including a void therein; coating a first photoresist film on said insulating film while filling said void with a portion said first photoresist film; exposing said first photoresist film while said portion of said first photoresist film is protected from exposure by said insulating film surrounding said void; developing said first photoresist film to remove said first photoresist film so that said insulating film is exposed with laving said void filled with said first portion of said first photoresist film; coating a second photoresist film on said insulating film in contact with said portion of said first photoresist film; and forming a hole in said second photoresist film to expose a part of said insulating film.
References Cited (Backward Citations)
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