Patent US5505322A successfully refreshed from Google Patents.
US5505322A
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Process for etching copper containing metallic film and forming copper containing metallic wiring
Assignee: Sony Corp
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Filing: 1995-02-15
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Granted: 1996-04-09
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Expires: 2015-02-15
Abstract
Abstract A process for dry etching a copper containing film formed on a substrate is performed by using an etching gas while heating at a temperature below 200 DEG C. The etching gas is selectable from the group consisting of a mixed gas of a N containing gas, an O containing gas, a N and O containing gas, or a mixed gas of a N containing gas, an O containing gas and a F containing gas, or a mixed gas of a N and O containing gas and a F containing gas. By this etching gas, Cu(NO3)2 is formed to be sublimed.
Inventors
- 👤 Keiji Shinohara
- 👤 Junichi Sato
- 👤 Yukihiro Kamide
- 👤 Toshiharu Yanagida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:03
CPC Classifications
C; C23; C23F; C23F4/00; H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
65 words
A process for anistropic etching of a copper film formed on a substrate, comprising the steps of: providing a patterned mask on the copper film; and etching exposed portions of the copper film by using a gas while producing Cu(NO 3 ) 2 between active species formed by the gas and copper in the copper film, and subliming the produced Cu(NO 3 ) 2 .
Claim 2
Dependent Claim
65 words
A process for anistropic etching of a copper film formed on a substrate, comprising the steps of: providing a patterned mask on the copper film; and etching exposed portions of the copper film by using a gas while producing Cu(NO 3 ) 2 between active species formed by the gas and copper in the copper film, and subliming the produced Cu(NO 3 ) 2 .
Claim 3
Dependent Claim
19 words
A process as claimed in claim 1 wherein said etching is carried out at a temperature below 200° C.
Claim 4
Dependent Claim
63 words
A process as claimed in claim 1 wherein said gas is selected from the group consisting of: a mixed gas of nitrogen containing gas and oxygen containing gas; a nitrogen and oxygen containing gas; a mixed gas of nitrogen containing gas, oxygen containing gas, and fluorine containing gas; and a mixed gas of a nitrogen and oxygen gas and a fluorine containing gas.
Claim 5
Dependent Claim
14 words
A process as claimed in claim 1, wherein said gas comprises NO 3 .
References Cited (Backward Citations)
US4466859A
Cited
US4468284A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-09 | 1999-10-09 | 2000-04-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-09 | 2003-10-09 | 2004-04-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-09 | 2007-10-09 | 2008-04-09 | $7700.00 | Window Closed / Lapsed |