Patent US5504347A successfully refreshed from Google Patents.
US5504347A
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Lateral resonant tunneling device having gate electrode aligned with tunneling barriers
Assignee: Raytheon Co
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Filing: 1994-10-17
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Granted: 1996-04-02
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Expires: 2014-10-17
Abstract
Abstract A resonant tunneling transistor (400) with lateral carrier transport through tunneling barriers (404, 408) grown as a refilling of trenches etched partially into a transverse quantum well (410) and defining a quantum wire or quantum dot (406). The fabrication methods include use of angled deposition to create overhangs at the top of openings which define sublithographic separations for tunneling barrier locations.
Inventors
- 👤 Dejan Jovanovic
- 👤 John N. Randall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:23
CPC Classifications
H; H10; H10D; H10D30/00; B; B82; B82Y; B82Y10/00; H10D48/00; H10D48/01; H10D48/031; H10D48/032; H10D30/40; H10D62/00; H10D62/80; H10D62/85; H10D62/852
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
72 words
A lateral resonant tunneling structure, comprising: (a) a heterojunction with a semiconductor layer having a band edge offset from the corresponding band edge of an overlying material layer; (b) an electrode on said material layer and at least two tunneling barriers aligned to edges of said electrode and extending from said material layer into but not through said semiconductor layer; and (c) contacts to said semiconductor layer remote from said tunneling barriers.
Claim 2
Dependent Claim
72 words
A lateral resonant tunneling structure, comprising: (a) a heterojunction with a semiconductor layer having a band edge offset from the corresponding band edge of an overlying material layer; (b) an electrode on said material layer and at least two tunneling barriers aligned to edges of said electrode and extending from said material layer into but not through said semiconductor layer; and (c) contacts to said semiconductor layer remote from said tunneling barriers.
Claim 3
Dependent Claim
28 words
The lateral resonant tunneling structure of claim 1, wherein: (a) said semiconductor layer is a first III-V compound; and (b) said material layer is a second III-V compound.
Claim 4
Dependent Claim
41 words
The lateral resonant tunneling structure of claim 2, wherein: (a) said material layer includes (i) a first sublayer abutting said semiconductor layer and including said tunneling barriers and (ii) a second sublayer containing dopants whereby said semiconductor layer is modulation doped.
Claim 5
Dependent Claim
23 words
The lateral resonant tunneling structure of claim 1, wherein: (a) said semiconductor layer is silicon; and (b) said material layer is a dielectric.
Claim 6
Dependent Claim
16 words
The lateral resonant tunneling structure of claim 4, wherein: (a) said tunneling barriers have (111)-oriented sidewalls.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-04-02 | 1999-10-02 | 2000-04-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-04-02 | 2003-10-02 | 2004-04-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-04-02 | 2007-10-02 | 2008-04-02 | $7700.00 | Window Closed / Lapsed |