Semiconductor acceleration sensor

Claim 2

A semiconductor acceleration sensor comprising: a trench provided in a main surface of a semiconductor substrate, said trench having a first inner wall, a second inner wall opposing said first inner wall, and a third inner wall joining said first inner wall and said second inner wall; a gate electrode of an electroconductive material, said gate electrode facing said first inner wall, said second inner wall and said third inner wall of said trench via an air gap; a first semiconductor unit formed in said first inner wall and consisting of three adjoining semiconductor layers for detecting a displacement of said gate electrode relative to said first semiconductor unit induced by an applied acceleration, every adjoining pair of said three adjoining semiconductor layers of said first semiconductor layer having different conductivity types; and a second semiconductor unit formed in said second inner wall and consisting of three adjoining semiconductor layers for detecting said displacement of said gate electrode relative to said second semiconductor unit induced by said applied acceleration, every adjoining pair of said three adjoining semiconductor layers of said second semiconductor layer having different conductivity types.

Claim 3

A semiconductor acceleration sensor according to claim 1, further comprising an electrically insulating film covering said first inner wall, said second inner wall, and said third inner wall.

Claim 4

A semiconductor acceleration sensor according to claim 1 or 2, wherein said first semiconductor unit extends from said first inner wall to said main surface of said semiconductor substrate and said second semiconductor unit extends from said second inner wall to said main surface of said semiconductor substrate.

Claim 5

A semiconductor acceleration sensor comprising: a plurality of trenches provided in a main surface of a semiconductor substrate, each trench having an inner surface comprising side walls and a bottom; a cantilever supported in said trench, an air gap dielectrically separating said cantilever from said inner walls of said trenches; a first gate electrode of an electroconductive material provided on a first side surface of said cantilever, said air gap dielectrically separating said first gate electrode from said inner surface of a first of said trenches; a second gate electrode of an electroconductive material provided on the other side surface of said cantilever opposite to said first side surface, said air gap dielectrically separating said second gate electrode from said inner surface of a second of said trenches; a first semiconductor unit formed in said inner surface of said first trench, said first semiconductor unit consisting of three adjoining semiconductor layers for detecting a displacement of said first gate electrode relative to said first semiconductor unit induced by an applied acceleration, every adjoining pair of said three adjoining semiconductor layers said first semiconductor unit having different conductivity types; a second semiconductor unit formed in said inner surface of said second trench, said second semiconductor unit consisting of three adjoining semiconductor layers for detecting said displacement of said first gate electrode relative to said second semiconductor unit induced by said applied acceleration, every adjoining pair of said three adjoining semiconductor layers of said second semiconductor unit having different conductivity types; a third semiconductor unit formed in said inner surface of a third of said trenches, said third semiconductor unit consisting of three adjoining semiconductor layers for detecting said displacement of said second gate electrode relative to said third semiconductor unit induced by said applied acceleration, every adjoining pair of said three adjoining semiconductor layers of said third semiconductor unit having different conductivity types; and a fourth semiconductor unit formed in said inner surface of a fourth of said trenches, said fourth semiconductor unit consisting of three adjoining semiconductor layers for detecting said displacement of said second gate electrode relative to said fourth semiconductor unit induced by said applied acceleration, every adjoining pair of said three adjoining semiconductor layers of said fourth semiconductor unit having different conductivity types.

Claim 6

A semiconductor acceleration sensor comprising: a plurality of trenches provided in a main surface of a semiconductor substrate, each trench having an inner surface comprising side walls and a bottom; a cantilever supported in said trench, an air gap dielectrically separating said cantilever from said inner walls of said trenches; a first gate electrode of an electroconductive material provided on a first side surface of said cantilever, said air gap dielectrically separating said first gate electrode from said inner surface of a first of said trenches; a second gate electrode of an electroconductive material provided on the other side surface of said cantilever opposite to said first side surface, said air gap dielectrically separating said second gate electrode from said inner surface of a second of said trenches; a first semiconductor unit formed in said inner surface of said first trench, said first semiconductor unit consisting of three adjoining semiconductor layers for detecting a displacement of said first gate electrode relative to said first semiconductor unit induced by an applied acceleration, every adjoining pair of said three adjoining semiconductor layers said first semiconductor unit having different conductivity types; a second semiconductor unit formed in said inner surface of said second trench, said second semiconductor unit consisting of three adjoining semiconductor layers for detecting said displacement of said first gate electrode relative to said second semiconductor unit induced by said applied acceleration, every adjoining pair of said three adjoining semiconductor layers of said second semiconductor unit having different conductivity types; a third semiconductor unit formed in said inner surface of a third of said trenches, said third semiconductor unit consisting of three adjoining semiconductor layers for detecting said displacement of said second gate electrode relative to said third semiconductor unit induced by said applied acceleration, every adjoining pair of said three adjoining semiconductor layers of said third semiconductor unit having different conductivity types; and a fourth semiconductor unit formed in said inner surface of a fourth of said trenches, said fourth semiconductor unit consisting of three adjoining semiconductor layers for detecting said displacement of said second gate electrode relative to said fourth semiconductor unit induced by said applied acceleration, every adjoining pair of said three adjoining semiconductor layers of said fourth semiconductor unit having different conductivity types.

Claim 7

A semiconductor acceleration sensor comprising: a gate electrode of a electroconductive material formed in a semiconductor substrate, an air gap dielectrically separating said gate electrode from said semiconductor substrate; a first semiconductor unit formed in a surface of said semiconductor substrate and consisting of three adjoining semiconductor layers for detecting a displacement of said gate electrode relative to said first semiconductor unit induced by an applied acceleration, every adjoining pair of said three adjoining semiconductor layers having different conductivity types; and a potential layer formed in said semiconductor substrate and facing, one side of said gate electrode opposite to said first semiconductor unit via said air gap, said potential layer and said first semiconductor unit having an equivalent electric potential.

Claim 8

A semiconductor acceleration sensor comprising: a gate electrode of a electroconductive material formed in a semiconductor substrate, an air gap dielectrically separating said gate electrode from said semiconductor substrate; a first semiconductor unit formed in a surface of said semiconductor substrate and consisting of three adjoining semiconductor layers for detecting a displacement of said gate electrode relative to said first semiconductor unit induced by an applied acceleration, every adjoining pair of said three adjoining semiconductor layers having different conductivity types; and a potential layer formed in said semiconductor substrate and facing, one side of said gate electrode opposite to said first semiconductor unit via said air gap, said potential layer and said first semiconductor unit having an equivalent electric potential.

Claim 9

A semiconductor acceleration sensor according to claim 5, wherein said potential layer is a second semiconductor unit including three adjoining semiconductor layers, with every adjoining pair of said three adjoining semiconductor layers of said second semiconductor unit having different conductivity types.

Claim 10

A semiconductor displacement sensor comprising: a trench provided in a main surface of a semiconductor substrate, said trench having a first inner wall, a second inner wall opposing said first inner wall, and a third inner wall joining said first inner wall and said second inner wall; a gate electrode of an electroconductive material, said gate electrode facing through an air gap, said first inner wall, said second inner wall and said third inner wall of said trench; a first semiconductor unit formed in said first inner wall and consisting of three adjoining semiconductor layers for detecting a displacement of said gate electrode relative to said first semiconductor, every adjoining pair of said three adjoining semiconductor layers of said first semiconductor unit having different conductivity types; and a second semiconductor unit formed in said second inner wall and consisting of three adjoining semiconductor layers for detecting a displacement of said gate electrode relative to said second semiconductor unit, every adjoining pair of said three adjoining semiconductor layers of said second semiconductor unit having different conductivity types.

Claim 11

A semiconductor displacement sensor comprising: a trench provided in a main surface of a semiconductor substrate, said trench having a first inner wall, a second inner wall opposing said first inner wall, and a third inner wall joining said first inner wall and said second inner wall; a gate electrode of an electroconductive material, said gate electrode facing through an air gap, said first inner wall, said second inner wall and said third inner wall of said trench; a first semiconductor unit formed in said first inner wall and consisting of three adjoining semiconductor layers for detecting a displacement of said gate electrode relative to said first semiconductor, every adjoining pair of said three adjoining semiconductor layers of said first semiconductor unit having different conductivity types; and a second semiconductor unit formed in said second inner wall and consisting of three adjoining semiconductor layers for detecting a displacement of said gate electrode relative to said second semiconductor unit, every adjoining pair of said three adjoining semiconductor layers of said second semiconductor unit having different conductivity types.