Semiconductor pressure sensor and manufacture of the same

Abstract

Abstract PURPOSE:To facilitate detecting of pressure by a method wherein a gate electrode is provided on a substrate on which source and drain diffused regions are formed on both the sides of its recessed part and, further, a diaphragm composed of an insulating film is provided and the change of a current induced by the change of the diaphragm caused by an applied pressure is detected. CONSTITUTION:The main surface of a P-type Si semiconductor substrate is covered with an SiO2 film 3. A floating gate electrode 4 is formed on the bottom of a recessed part 2 formed in the predetermined region of the substrate. Source and drain diffused regions 5 and 6 are formed on both the sides of the recessed part 2 and, further, an SiO2 film 8 which is to be a diaphragm is formed above the source and drain regions 5 and 6 and a gate electrode 9, a source electrode 10 and a drain electrode 11 are formed on the film 8. If a pressure P is applied to the film 8 while a voltage is applied between the electrode 9 and the substrate 1, as the thickness of a apace 1 2 is changed, the capacity of the space is changed and the floating gate voltage is changed and a channel current Ic corresponding to the voltage is induced. The pressure can be detected by detecting the current.

Inventors

• 👤 Akira Kuroyanagi
• 👤 Tetsuo Fujii
• 👤 Tomohiro Funahashi
• 👤 Susumu Azeyanagi
• 👤 Shinji Yoshihara
• 👤 Mineichi Sakai

Bibliographic Details