US5502320A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dynamic random access memory (DRAM) semiconductor device
Assignee: Toshiba Corp
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Filing: 1994-03-15
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Granted: 1996-03-26
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Expires: 2014-03-15
Abstract
Abstract A semiconductor device comprising a semiconductor substrate of first conductivity type, a trench type element isolation region formed in a preset depth from the semiconductor substrate surface, an element region of the first conductivity type surrounded by the element isolation region, a gate trench for forming a gate electrode, the trench being formed in the semiconductor substrate with a smaller depth than the element isolation region and extending through the element region and element isolation region, a gate electrode buried in the bottom portion of the gate trench via a gate insulation film, and source and drain regions of a second conductivity type formed in the element region and separated from each other by the gate trench, wherein the top surface of the gate electrode lies higher than the bottom levels of the source and drain regions and lower than a contact surface of the source and drain regions.
Inventors
- 👤 Takashi Yamada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:05
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10B12/053; H10B12/30; H10B12/34; H10B12/39
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
192 words
A semiconductor device, comprising: a semiconductor substrate of a first conductivity type; a trench type element isolation region formed in a preset depth from the semiconductor substrate surface; an element region of the first conductivity type surrounded by the element isolation region; a gate trench for forming a gate electrode, the gate trench being formed in the semiconductor substrate with a smaller depth than the element isolation region and extending through the element region and the element isolation region; a gate electrode buried in the bottom portion of the gate trench via a gate insulation film; source and drain regions of a second conductivity type formed in the element region and separated from each other by the gate trench; and a plate electrode which is buried in said gate trench and formed on said gate electrode via a capacitor insulation film, wherein at least one of said source and drain regions is used as a storage node of a capacitor; wherein the top surface of the gate electrode lies higher than the bottom levels of the source and drain regions and lower than a contact surface of the source and drain regions.
Claim 2
Dependent Claim
192 words
A semiconductor device, comprising: a semiconductor substrate of a first conductivity type; a trench type element isolation region formed in a preset depth from the semiconductor substrate surface; an element region of the first conductivity type surrounded by the element isolation region; a gate trench for forming a gate electrode, the gate trench being formed in the semiconductor substrate with a smaller depth than the element isolation region and extending through the element region and the element isolation region; a gate electrode buried in the bottom portion of the gate trench via a gate insulation film; source and drain regions of a second conductivity type formed in the element region and separated from each other by the gate trench; and a plate electrode which is buried in said gate trench and formed on said gate electrode via a capacitor insulation film, wherein at least one of said source and drain regions is used as a storage node of a capacitor; wherein the top surface of the gate electrode lies higher than the bottom levels of the source and drain regions and lower than a contact surface of the source and drain regions.
Claim 3
Dependent Claim
55 words
The semiconductor device according to claim 1, further comprising a plate electrode which is disposed on the surface of the semiconductor substrate and above said gate electrode, said plate electrode being opposite to at least one of said source and drain regions used as a storage node of a capacitor via a capacitor insulation film.
Claim 4
Dependent Claim
35 words
The semiconductor device according to claim 1, wherein a trench for said element isolation region and said gate trench are formed so as to have forwardly tapered side walls, thereby increasing an effective channel width.
Claim 5
Dependent Claim
27 words
The semiconductor device according to claim 1, wherein the bottom surface of the gate electrode lies lower than the bottom levels of the source and drain regions.
Claim 6
Dependent Claim
186 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a trench type element isolation region formed in a preset depth from the semiconductor substrate surface; an element region of the first conductivity type surrounded by the element isolation region; a gate trench for forming a gate electrode, the gate trench being formed in the semiconductor substrate with a smaller depth than the element isolation region and extending through the element region and the element isolation region; a gate electrode buried in the bottom portion of the gate trench via a gate insulation film; source and drain regions of a second conductivity type formed in the element region and separated from each other by the gate trench; and a plate electrode which is disposed on the surface of the semiconductor substrate and on the side wall of the gate trench continuously so as to define one of a pair of capacitor electrodes; wherein the top surface of the gate electrode lies higher than the bottom levels of the source and drain regions and lower than a contact surface of the source and drain regions
Claim 7
Dependent Claim
186 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a trench type element isolation region formed in a preset depth from the semiconductor substrate surface; an element region of the first conductivity type surrounded by the element isolation region; a gate trench for forming a gate electrode, the gate trench being formed in the semiconductor substrate with a smaller depth than the element isolation region and extending through the element region and the element isolation region; a gate electrode buried in the bottom portion of the gate trench via a gate insulation film; source and drain regions of a second conductivity type formed in the element region and separated from each other by the gate trench; and a plate electrode which is disposed on the surface of the semiconductor substrate and on the side wall of the gate trench continuously so as to define one of a pair of capacitor electrodes; wherein the top surface of the gate electrode lies higher than the bottom levels of the source and drain regions and lower than a contact surface of the source and drain regions
Claim 8
Dependent Claim
178 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a trench type element isolation region formed in a preset depth from the semiconductor substrate surface; an element region of the first conductivity type surrounded by the element isolation region; a gate trench for forming a gate electrode, the gate trench being formed in the semiconductor substrate with a smaller depth than the element isolation region and extending through the element region and the element isolation region; a gate electrode buried in the bottom portion of the gate trench via a gate insulation film; source and drain regions of a second conductivity type formed in the element region and separated from each other by the gate trench; and a plate electrode which is buried in said gate trench and is opposite to one of said source and drain regions used as a storage node; wherein the top surface of the gate electrode lies higher than the bottom levels of the source and drain regions and lower than a contact surface of the source and drain regions.
Claim 9
Dependent Claim
178 words
A semiconductor device comprising: a semiconductor substrate of a first conductivity type; a trench type element isolation region formed in a preset depth from the semiconductor substrate surface; an element region of the first conductivity type surrounded by the element isolation region; a gate trench for forming a gate electrode, the gate trench being formed in the semiconductor substrate with a smaller depth than the element isolation region and extending through the element region and the element isolation region; a gate electrode buried in the bottom portion of the gate trench via a gate insulation film; source and drain regions of a second conductivity type formed in the element region and separated from each other by the gate trench; and a plate electrode which is buried in said gate trench and is opposite to one of said source and drain regions used as a storage node; wherein the top surface of the gate electrode lies higher than the bottom levels of the source and drain regions and lower than a contact surface of the source and drain regions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-26 | 1999-09-25 | 2000-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-26 | 2003-09-25 | 2004-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-26 | 2007-09-25 | 2008-03-26 | $7700.00 | Window Closed / Lapsed |