Method of constructing CMOS vertically modulated wells (VMW) by clustered MeV BILLI (buried implanted layer for lateral isolation) implantation

Claim 2

That method of manufacturing a semiconductor device comprising the following steps: applying a first mask forming isolation or active areas removing the first mask and applying a second mask placing the wafer in a treatment chamber performing a clustered series of irradiation steps while the wafer remains in said treatment chamber and before said wafer is removed therefrom each of which comprises irradiating said wafer through said second mask with ions of a conductivity type and an energy, wherein the energy of the ions in any one irradiation step differs from that in the other irradiation steps, and wherein the energy of the ions in one of the irradiation steps is higher than that in the other irradiation steps.

Claim 3

Method in accordance with claim 1 wherein at least one of said irradiation steps comprises irradiating with ions of a first conductivity type and at least one other of said irradiation steps comprises irradiating with ions of a second conductivity type.

Claim 4

Method in accordance with claim 2 wherein at least two of said irradiation steps comprises irradiating with ions of a first conductivity type.

Claim 5

Method in accordance with claim 2 wherein said device has a substrate of a first conductivity type and the ions in said irradiation step having ions with an energy higher than that in the other irradiation steps are of said first conductivity type, while the lower energy ions are of opposite conductivity type, so that a twin-well structure is formed.

Claim 6

Method in accordance with claim 3 wherein said device has a substrate of a first conductivity type and the ions in said irradiation step having ions with an energy higher than that in the other irradiation steps are of the opposite conductivity type, while the lower energy ions are of substrate conductivity type, so that a triple-well structure is formed wherein both surface twin wells are isolated from the substrate.

Claim 7

That method of manufacturing a semiconductor device comprising the following steps: forming isolation areas or active areas in a surface of a substrate, placing a mask on said surface, and carrying out a clustered series of four to six implants, said clustered series of four to six implants being carried out as follows: first, directing p-type ions onto said surface with a first energy sufficient to penetrate said mask and sufficient to form a first retrograde p-well, second, directing p-type ions onto said surface with a second energy less than said first energy but sufficient to penetrate said mask and sufficient to form a channel stop implant or second retrograde p-well which is shallower than the first retrograde p-well, as an optional third step, directing p-type ions onto said surface with a third energy less than said second energy but sufficient to penetrate said mask and sufficient to form a threshhold voltage layer V t at the surface of the retrograde p-well, fourth, directing n-type ions onto said surface with a fourth energy insufficient to penetrate said mask but sufficient to form a first retrograde n-well, and fifth, directing n-type ions onto said surface with a fifth energy less than said fourth energy but sufficient to form a channel stop implant or second retrograde n-well which is shallower than the first retrograde n-well.

Claim 8

That method of manufacturing a semiconductor device comprising the following steps: forming isolation areas or active areas in a surface of a substrate, placing a mask on said surface, and carrying out a clustered series of four to six implants, said clustered series of four to six implants being carried out as follows: first, directing p-type ions onto said surface with a first energy sufficient to penetrate said mask and sufficient to form a first retrograde p-well, second, directing p-type ions onto said surface with a second energy less than said first energy but sufficient to penetrate said mask and sufficient to form a channel stop implant or second retrograde p-well which is shallower than the first retrograde p-well, as an optional third step, directing p-type ions onto said surface with a third energy less than said second energy but sufficient to penetrate said mask and sufficient to form a threshhold voltage layer V t at the surface of the retrograde p-well, fourth, directing n-type ions onto said surface with a fourth energy insufficient to penetrate said mask but sufficient to form a first retrograde n-well, and fifth, directing n-type ions onto said surface with a fifth energy less than said fourth energy but sufficient to form a channel stop implant or second retrograde n-well which is shallower than the first retrograde n-well.

Claim 9

A method according to claim 6 including, as a sixth step, the step of directing n-type ions onto said surface with an energy less than said fifth energy but sufficient to form a threshhold voltage layer V t at the surface of the retrograde n-well.

Claim 10

A method according to claim 6 including, as a sixth step, the step of directing p-type ions onto the upper surface of the substrate with an energy less than said fifth energy but sufficient to form a threshhold voltage layer V t at the surface of the retrograde n-well.

Claim 11

That method of manufacturing a semiconductor device having a twin-well structure on a p-substrate comprising the following steps: forming isolation areas or active areas in a surface of a substrate, carrying out a blanket Vt implant, placing a mask on said surface, and carrying out a clustered series of four to six implants, said clustered series of four to six implants being carried out as follows: first, directing p-type ions onto said surface with a first energy sufficient to penetrate said mask and sufficient to form a first retrograde p-well, second, directing p-type ions onto said surface with a second energy less than said first energy but sufficient to penetrate said mask and sufficient to form a channel stop implant or second retrograde p-well which is shallower than the first retrograde p-well, third, directing n-type ions onto said surface with a third energy insufficient to penetrate said mask but sufficient to form a first retrograde n-well, and fourth, directing n-type ions onto said surface with a fourth energy less than said third energy but sufficient to form a channel stop implant or second retrograde n-well which is shallower than the first retrograde n-well.

Claim 12

That method of manufacturing a semiconductor device having a twin-well structure on a p-substrate comprising the following steps: forming isolation areas or active areas in a surface of a substrate, carrying out a blanket Vt implant, placing a mask on said surface, and carrying out a clustered series of four to six implants, said clustered series of four to six implants being carried out as follows: first, directing p-type ions onto said surface with a first energy sufficient to penetrate said mask and sufficient to form a first retrograde p-well, second, directing p-type ions onto said surface with a second energy less than said first energy but sufficient to penetrate said mask and sufficient to form a channel stop implant or second retrograde p-well which is shallower than the first retrograde p-well, third, directing n-type ions onto said surface with a third energy insufficient to penetrate said mask but sufficient to form a first retrograde n-well, and fourth, directing n-type ions onto said surface with a fourth energy less than said third energy but sufficient to form a channel stop implant or second retrograde n-well which is shallower than the first retrograde n-well.

Claim 13

A method according to claim 7 wherein said optional third step is carried out and there is also carried out the step of carrying out a blanket Vt implant after the step of forming isolation areas or active areas and before placing said mask on said surface.

Claim 14

A method according to claim 6, wherein said substrate is p-type and a twin-well structure is formed.

Claim 15

A method according to claim 6, wherein said substrate is n-type and a triple-well structure is formed.

Claim 16

That method of manufacturing a semiconductor device having a twin-well structure on an n-substrate comprising the following steps: forming isolation areas or active areas in a surface of an n-type substrate 110, placing a mask on said surface, and carrying out a clustered series of four to six implants, said clustered series of four to six implants being carried out as follows: first, directing n-type ions onto said surface with a first energy sufficient to penetrate said mask and sufficient to form a lower layer 109 of n-type material, so that a retrograde n-well 108,109 is formed, second, directing n-type ions onto said surface with a second energy less than said first energy but sufficient to penetrate said mask and sufficient to form an upper layer 108 of n-type material, so that a channel stop is formed, as an optional third step, directing n-type or p-type ions onto said surface with a third energy less than said second energy but sufficient to penetrate said mask and sufficient to form a threshhold voltage layer V t at the surface of the retrograde n-well 108,109, fourth, directing p-type ions onto said surface with a fourth energy insufficient to penetrate said mask but sufficient to form a lower layer 107 of p-type material, so that a retrograde p-well 106,107 is formed, fifth, directing p-type ions onto said surface with a fifth energy less than said fourth energy but sufficient to form an upper layer 106 of p-type material, so that a channel stop is formed, and, as an optional sixth step, directing p-type ions onto said surface with a sixth energy less than said fifth energy but sufficient to form a threshhold voltage layer V t at the surface of the retrograde p-well 106,107.

Claim 17

That method of manufacturing a semiconductor device having a twin-well structure on an n-substrate comprising the following steps: forming isolation areas or active areas in a surface of an n-type substrate 110, placing a mask on said surface, and carrying out a clustered series of four to six implants, said clustered series of four to six implants being carried out as follows: first, directing n-type ions onto said surface with a first energy sufficient to penetrate said mask and sufficient to form a lower layer 109 of n-type material, so that a retrograde n-well 108,109 is formed, second, directing n-type ions onto said surface with a second energy less than said first energy but sufficient to penetrate said mask and sufficient to form an upper layer 108 of n-type material, so that a channel stop is formed, as an optional third step, directing n-type or p-type ions onto said surface with a third energy less than said second energy but sufficient to penetrate said mask and sufficient to form a threshhold voltage layer V t at the surface of the retrograde n-well 108,109, fourth, directing p-type ions onto said surface with a fourth energy insufficient to penetrate said mask but sufficient to form a lower layer 107 of p-type material, so that a retrograde p-well 106,107 is formed, fifth, directing p-type ions onto said surface with a fifth energy less than said fourth energy but sufficient to form an upper layer 106 of p-type material, so that a channel stop is formed, and, as an optional sixth step, directing p-type ions onto said surface with a sixth energy less than said fifth energy but sufficient to form a threshhold voltage layer V t at the surface of the retrograde p-well 106,107.

Claim 18

That method of manufacturing a semiconductor device having a triple-well structure comprising the following steps: forming isolation areas or active areas in a surface of a p-type substrate 110, placing a first mask on said surface, said mask having at least one aperture, directing n-type ions onto said surface with a first energy insufficient to penetrate said first mask and sufficient to form a buried n-layer underneath said aperture, removing said first mask and placing a second (n-well) mask on said surface, said mask having at least one solid portion and having a thickness sufficient to block the maximum energy of n-type ions, said second mask being placed so that said solid portion is above said buried n-layer, and carrying out a clustered series of four to six implants, said clustered series of four to six implants being carried out as follows: first, directing p-type ions onto said surface with a second energy sufficient to penetrate said second mask and sufficient to form a lower layer 107 of p-type material so that a retrograde p-well is formed, but at a dose not to compensate the buried n-layer, second, directing p-type ions onto said surface with a third energy less than said second energy and sufficient to form an upper layer 106 of p-type material so that a channel stop is formed in the p-wells, as an optional third step, directing p-type ions onto said surface with a fourth energy less than said third energy and sufficient to form a threshhold voltage layer V t at the surface of the retrograde p-well 106,107, fourth, directing n-type ions onto said surface with a fifth energy insufficient to penetrate said second mask but sufficient to form a lower layer 109 of n-type material, so that a retrograde n-well is formed, and fifth, directing n-type ions onto said surface with a sixth energy insufficient to penetrate said second mask but sufficient to form an upper layer 108 of n-type material so that a channel stop is formed.

Claim 19

That method of manufacturing a semiconductor device having a triple-well structure comprising the following steps: forming isolation areas or active areas in a surface of a p-type substrate 110, placing a first mask on said surface, said mask having at least one aperture, directing n-type ions onto said surface with a first energy insufficient to penetrate said first mask and sufficient to form a buried n-layer underneath said aperture, removing said first mask and placing a second (n-well) mask on said surface, said mask having at least one solid portion and having a thickness sufficient to block the maximum energy of n-type ions, said second mask being placed so that said solid portion is above said buried n-layer, and carrying out a clustered series of four to six implants, said clustered series of four to six implants being carried out as follows: first, directing p-type ions onto said surface with a second energy sufficient to penetrate said second mask and sufficient to form a lower layer 107 of p-type material so that a retrograde p-well is formed, but at a dose not to compensate the buried n-layer, second, directing p-type ions onto said surface with a third energy less than said second energy and sufficient to form an upper layer 106 of p-type material so that a channel stop is formed in the p-wells, as an optional third step, directing p-type ions onto said surface with a fourth energy less than said third energy and sufficient to form a threshhold voltage layer V t at the surface of the retrograde p-well 106,107, fourth, directing n-type ions onto said surface with a fifth energy insufficient to penetrate said second mask but sufficient to form a lower layer 109 of n-type material, so that a retrograde n-well is formed, and fifth, directing n-type ions onto said surface with a sixth energy insufficient to penetrate said second mask but sufficient to form an upper layer 108 of n-type material so that a channel stop is formed.

Claim 20

A method according to claim 14, wherein, as a sixth step, there is carried out the step of directing p-type ions onto said surface with an energy less than that of said fifth step but sufficient to form a threshhold voltage layer V t at the surface of the retrograde n-well 108,109.

Claim 21

A method according to claim 14, wherein, as a sixth step, there is carried out the step of directing n-type ions onto the surface of the substrate 110 with an energy less than that of said fifth step but sufficient to form a threshhold voltage layer V t at the surface of the retrograde n-well 108,109.

Claim 22

A method according to claim 6 wherein, prior to said forming step, inert ambient annealing/denuding is performed on said surface to delete oxygen and defects from the surface region.

Claim 23

Method in accordance with claim 1, including carrying out a blanket V t implant after the step of removing the first mask and before the step of applying the second mask.

Claim 24

Method in accordance with claim 1, including removing the second mask after said clustered series of irradiation steps and thereafter carrying out a blanket V t implant.

Claim 25

That method of manufacturing a semiconductor device having a twin-well structure on a p-substrate comprising the following steps: forming isolation areas or active areas in a surface of a substrate, placing a mask on said surface, and carrying out a clustered series of four to six implants, said clustered series of four to six implants being carried out as follows: first, directing p-type ions onto said surface with a first energy sufficient to penetrate said mask and sufficient to form a first retrograde p-well, second, directing p-type ions onto said surface with a second energy less than said first energy but sufficient to penetrate said mask and sufficient to form a channel stop implant or second retrograde p-well which is shallower than the first retrograde p-well, third, directing n-type ions onto said surface with a third energy insufficient to penetrate said mask but sufficient to form a first retrograde n-well, fourth, directing n-type ions onto said surface with a fourth energy less than said third energy but sufficient to form a channel stop implant or second retrograde n-well which is shallower than the first retrograde n-well, and fifth, removing said mask and thereafter carrying out a blanket V t implant.

Claim 26

That method of manufacturing a semiconductor device having a twin-well structure on a p-substrate comprising the following steps: forming isolation areas or active areas in a surface of a substrate, placing a mask on said surface, and carrying out a clustered series of four to six implants, said clustered series of four to six implants being carried out as follows: first, directing p-type ions onto said surface with a first energy sufficient to penetrate said mask and sufficient to form a first retrograde p-well, second, directing p-type ions onto said surface with a second energy less than said first energy but sufficient to penetrate said mask and sufficient to form a channel stop implant or second retrograde p-well which is shallower than the first retrograde p-well, third, directing n-type ions onto said surface with a third energy insufficient to penetrate said mask but sufficient to form a first retrograde n-well, fourth, directing n-type ions onto said surface with a fourth energy less than said third energy but sufficient to form a channel stop implant or second retrograde n-well which is shallower than the first retrograde n-well, and fifth, removing said mask and thereafter carrying out a blanket V t implant.

Claim 27

A method according to claim 7 wherein said optional third step is carried out and there is also carried out, as a seventh step and an eighth step, respectively, the step of removing said mask and the step of carrying out a blanket V t implant.