US5501173A
Expired / Lapsed
US
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Method for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substrates
Assignee: Northrop Grumman Systems Corp
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Filing: 1993-10-18
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Granted: 1996-03-26
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Expires: 2013-10-18
Abstract
Abstract A method for epitaxially growing a-axis α-SiC on an a-axis substrate is provided. A section is formed from the SiC crystal by making a pair of parallel cuts in the crystal. Each of these cuts is parallel to the c-axis of the crystal. The resulting section formed from the crystal has opposing a-face surfaces parallel to the c-axis of the crystal. A gas mixture having hydrocarbon and silane is passed over one of the a-face surfaces of the section. The hydrocarbon and silane react on this a-face surface to form an epitaxial layer of SiC. Preferably, the SiC is grown at a temperature of approximately 1450° C.
Inventors
- 👤 Albert A. Burk, Jr.
- 👤 Donovan L. Barrett
- 👤 Hudson M. Hobgood
- 👤 Rowland C. Clarke
- 👤 Graeme W. Eldridge
- 👤 Charles D. Brandt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 14:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2904; C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/36; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3408; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S148/00; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
98 words
A method for epitaxially growing SiC on a substrate comprising the steps of: a. providing an α-SiC crystal substrate; b. forming a section from said crystal substrate by making a pair of cuts in said crystal substrate parallel to the c-axis of said crystal substrate, said section having opposing a-face surfaces parallel to the c-axis of said crystal; c. passing a gas mixture comprised of a hydrocarbon and a silane-based compound free of any halogen over one of said opposing a-face surfaces of said section, said hydrocarbon and said silane reacting to form an epitaxial layer of SiC.
Claim 2
Independent Claim
98 words
A method for epitaxially growing SiC on a substrate comprising the steps of: a. providing an α-SiC crystal substrate; b. forming a section from said crystal substrate by making a pair of cuts in said crystal substrate parallel to the c-axis of said crystal substrate, said section having opposing a-face surfaces parallel to the c-axis of said crystal; c. passing a gas mixture comprised of a hydrocarbon and a silane-based compound free of any halogen over one of said opposing a-face surfaces of said section, said hydrocarbon and said silane reacting to form an epitaxial layer of SiC.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said α-SiC crystal is the 6H polytype.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein said, hydrocarbon gas is propane.
Claim 5
Dependent Claim
11 words
The method of claim 3 wherein said silane-based compound is silane.
Claim 6
Dependent Claim
20 words
The method of claim 4 wherein said epitaxial layer of SiC is grown at a temperature of approximately 1450° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-26 | 1999-09-25 | 2000-03-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-26 | 2003-09-25 | 2004-03-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-26 | 2007-09-25 | 2008-03-26 | $7700.00 | Window Closed / Lapsed |