Epitaxial growth of silicon carbide

Abstract

Abstract PURPOSE:To make it possible to form a film on a wafer with a large diameter easily at low temperature by a method wherein a gas of silicon compounds is reacted with a gas to hydrocarbon compounds so as to epitaxially grow a silicon carbide layer on a substrate. CONSTITUTION:As a compound gas containing chlorine, for example, a mixture gas containing any of silane trichloride or silane, methan, propane, etc., is introduced into an epitaxial growth apparatus, and the epitaxial growth is performed with the reduced pressure of 80torr or less than that for the mixture gas of those and with the temperature of the substrate lower than normal state so as to form a silicon carbide layer on the silicon substrate. The obtained beta-SiC film has superior adhesiveness with a silicon substrate and does not require carbonization process with high temperature.

Inventors

• 👤 Fumitake Mieno
• 👤 文健 三重野
• 👤 Yuji Furumura
• 👤 雄二 古村
• 👤 Masahiko Toki
• 👤 雅彦 土岐
• 👤 Mamoru Maeda
• 👤 守 前田

Bibliographic Details