US5500552A
Expired / Lapsed
US
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LC element, semiconductor device and LC element manufacturing method
Assignee: NSC Co Ltd
•
Filing: 1994-07-22
•
Granted: 1996-03-19
•
Expires: 2014-07-22
Abstract
Abstract An LC element, semiconductor device and a manufacturing method thereof whereby a channel 22 is formed by applying a voltage to a gate electrode 10 having a predetermined shape formed on a p-Si substrate 30 via an insulation layer 26, whereby a connection is formed between a first diffusion region 12 and a second diffusion region 14 formed at separated positions near the surface of the p-Si substrate 30; both the channel 22 and gate electrode 10 function as inductors, and between these a distributed constant type capacitor is formed, and possessing excellent attenuation characteristics over a wide band. This LC element and semiconductor device can be easily manufactured by using MOS manufacturing technology; in the case of manufacturing as a portion of a semiconductor substrate, component assembly work in subsequent processing can be omitted. Also these can be formed as a portion of an IC or LSI device.
Inventors
- 👤 Takeshi Ikeda
- 👤 Tsutomu Nakanishi
- 👤 Akira Okamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 19:51
CPC Classifications
H; H03; H03H; H03H7/00; H03H7/01; H03H7/0115; H10; H10D; H10D1/00; H10D1/40; H03B; H03B5/00; H03B5/18; H03B5/1841; H03H7/0123; H10D1/20; H10D1/60; H10D1/68; H10D84/00; H10W; H10W20/00; H10W20/01; H03H1/00; H03H2001/0021; H03H2001/0064; H03H2001/0071; H03H2001/0078
Claims Analysis
Total Claims: 80
Claim 1
Independent Claim
108 words
An LC element comprising: a gate electrode having a given inductance formed on a semiconductor substrate, an insulation layer formed between said gate electrode and said semiconductor substrate, a first diffusion region formed near one end of a channel formed in correspondence to said gate electrode within said semiconductor substrate, and a second diffusion region formed near the other end of said channel within said semiconductor substrate, wherein said gate electrode and said channel function as inductors, said gate electrode inductance and said channel inductance and a capacitance formed between these exist as distributed constants, and at a minimum said channel is used as a signal transmission line.
Claim 2
Dependent Claim
108 words
An LC element comprising: a gate electrode having a given inductance formed on a semiconductor substrate, an insulation layer formed between said gate electrode and said semiconductor substrate, a first diffusion region formed near one end of a channel formed in correspondence to said gate electrode within said semiconductor substrate, and a second diffusion region formed near the other end of said channel within said semiconductor substrate, wherein said gate electrode and said channel function as inductors, said gate electrode inductance and said channel inductance and a capacitance formed between these exist as distributed constants, and at a minimum said channel is used as a signal transmission line.
Claim 3
Dependent Claim
35 words
An LC element according to claim 1, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 4
Dependent Claim
31 words
An LC element according to claim 1, wherein providing a protector circuit for said gate electrode whereby excess voltage is bypassed to one of an operating power supply line and ground.
Claim 5
Dependent Claim
54 words
An LC element according to claim 1, wherein said gate electrode is divided into a plurality of gate segments, the respective divided plurality of gate segments are mutually and electrically connected, and in order to avoid cutting said channel in portions between the plurality of gate segments, carriers are injected beforehand into these portions.
Claim 6
Dependent Claim
52 words
An LC element according to claim 1, wherein the LC element is formed as a portion of a semiconductor substrate in unitized construction so that at least one of said gate electrode and said channel formed in correspondence thereof is inserted into one of a signal line and a power supply line.
Claim 7
Dependent Claim
78 words
An LC element according to claim 1, further comprising: a first input/output electrode electrically connected to said first diffusion region, a second input/output electrode electrically connected to said second diffusion region, a ground electrode electrically connected near one end of said gate electrode, wherein a signal is input to one of said first and second input/output electrodes and output from the other, and said ground electrode is connected to one of a fixed potential power supply and ground.
Claim 8
Dependent Claim
35 words
An LC element according to claim 6, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 9
Dependent Claim
22 words
An LC element according to claim 6, wherein a buffer circuit is connected to the output side of said signal transmission line.
Claim 10
Dependent Claim
27 words
An LC element according to claim 6, wherein carriers are injected beforehand at a position corresponding to said gate electrode near the surface of said semiconductor substrate.
Claim 11
Dependent Claim
52 words
An LC element according to claim 6, wherein carriers are injected beforehand at a part of said channel near the surface of said semiconductor substrate to set a channel length one of longer and shorter with respect to said gate electrode, resulting in partial correspondence between said channel and said gate electrode.
Claim 12
Dependent Claim
80 words
An LC element according to claim 1, further comprising: a first input/output electrode electrically connected to said first diffusion region, a second input/output electrode electrically connected to said second diffusion region, a third input/output electrode electrically connected near one end of said gate electrode, and a fourth input/output electrode electrically connected near the other end of said gate electrode, wherein use is enabled as a common mode type element wherein both said channel and said gate are signal transmission lines.
Claim 13
Dependent Claim
35 words
An LC element according to claim 11, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 14
Dependent Claim
22 words
A LC element according to claim 11, wherein a buffer circuit is connected to the output side of said signal transmission line.
Claim 15
Dependent Claim
27 words
An LC element according to claim 11, wherein carriers are injected beforehand at a position corresponding to said gate electrode near the surface of said semiconductor substrate.
Claim 16
Dependent Claim
52 words
An LC element according to claim 11, wherein carriers are injected beforehand at a part of said channel near the surface of said semiconductor substrate to set a channel length one of longer and shorter with respect to said gate electrode, resulting in partial correspondence between said channel and said gate electrode.
Claim 17
Dependent Claim
17 words
An LC element according to claim 1, wherein said gate electrode is formed in a spiral shape.
Claim 18
Dependent Claim
35 words
An LC element according to claim 16, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 19
Dependent Claim
29 words
An LC element according to claim 16, wherein providing a protector circuit for said gate electrode whereby excess voltage is bypassed to the operating power supply line or ground.
Claim 20
Dependent Claim
53 words
An LC element according to claim 16, wherein said gate electrode is divided into a plurality of gate segments, the respective divided plurality of gate segments are mutually connected electrically, and in order to avoid cutting said channel in portions between the plurality of gate segments, carriers are injected beforehand into these portions.
Claim 21
Dependent Claim
52 words
An LC element according to claim 16, wherein the LC element is formed as a portion of a semiconductor substrate in unitized construction so that at least one of said gate electrode and the channel formed in correspondence thereof is inserted into one of a signal line and a power supply line.
Claim 22
Dependent Claim
79 words
An LC element according to claim 16, further comprising: a first input/output electrode electrically connected to said first diffusion region, a second input/output electrode electrically connected to said second diffusion region, a ground electrode electrically connected near one end of said gate electrode, wherein a signal is input to either one of said first and second input/output electrodes and output from the other, and said ground electrode is connected to one of a fixed potential power supply and ground.
Claim 23
Dependent Claim
35 words
An LC element according to claim 21, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 24
Dependent Claim
22 words
A LC element according to claim 21, wherein a buffer circuit is connected to the output side of said signal transmission line.
Claim 25
Dependent Claim
27 words
An LC element according to claim 21, wherein carriers are injected beforehand at a position corresponding to said gate electrode near the surface of said semiconductor substrate.
Claim 26
Dependent Claim
52 words
An LC element according to claim 21, wherein carriers are injected beforehand at a part of said channel near the surface of said semiconductor substrate to set a channel length one of longer and shorter with respect to said gate electrode, resulting in partial correspondence between said channel and said gate electrode.
Claim 27
Dependent Claim
80 words
An LC element according to claim 16, further comprising: a first input/output electrode electrically connected to said first diffusion region, a second input/output electrode electrically connected to said second diffusion region, a third input/output electrode electrically connected near one end of said gate electrode, and a fourth input/output electrode electrically connected near the other end of said gate electrode, wherein use is enabled as a common mode type element wherein both said channel and said gate are signal transmission lines.
Claim 28
Dependent Claim
35 words
An LC element according to claim 26, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 29
Dependent Claim
22 words
An LC element according to claim 26, wherein a buffer circuit is connected to the output side of said signal transmission line.
Claim 30
Dependent Claim
27 words
An LC element according to claim 26, wherein carriers are injected beforehand at a position corresponding to said gate electrode near the surface of said semiconductor substrate.
Claim 31
Dependent Claim
52 words
An LC element according to claim 26, wherein carriers are injected beforehand at a part of said channel near the surface of said semiconductor substrate to set a channel length one of longer and shorter with respect to said gate electrode, resulting in partial correspondence between said channel and said gate electrode.
Claim 32
Dependent Claim
17 words
An LC element according to claim 1, wherein said gate electrode is formed in a meander shape.
Claim 33
Dependent Claim
35 words
An LC element according to claim 31, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 34
Dependent Claim
31 words
An LC element according to claim 31, wherein providing a protector circuit for said gate electrode whereby excess voltage is bypassed to one of an operating power supply line and ground.
Claim 35
Dependent Claim
54 words
An LC element according to claim 31, wherein said gate electrode is divided into a plurality of gate segments, the respective divided plurality of gate segments are mutually and electrically connected, and in order to avoid cutting said channel in portions between the plurality of gate segments, carriers are injected beforehand into the portions.
Claim 36
Dependent Claim
52 words
An LC element according to claim 31, wherein the LC element is formed as a portion of a semiconductor substrate in unitized construction so that at least one of said gate electrode and a channel formed in correspondence thereof is inserted into one of a signal line and a power supply line.
Claim 37
Dependent Claim
78 words
An LC element according to claim 31, further comprising: a first input/output electrode electrically connected to said first diffusion region, a second input/output electrode electrically connected to said second diffusion region, a ground electrode electrically connected near one end of said gate electrode, wherein a signal is input to one of said first and second input/output electrodes and output from the other, and said ground electrode is connected to one of a fixed potential power supply and ground.
Claim 38
Dependent Claim
35 words
An LC element according to claim 36, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 39
Dependent Claim
22 words
An LC element according to claim 36, wherein a buffer circuit is connected to the output side of said signal transmission line.
Claim 40
Dependent Claim
27 words
An LC element according to claim 36, wherein carriers are injected beforehand at a position corresponding to said gate electrode near the surface of said semiconductor substrate.
Claim 41
Dependent Claim
52 words
An LC element according to claim 36, wherein carriers are injected beforehand at a part of said channel near the surface of said semiconductor substrate to set a channel length one of longer and shorter with respect to said gate electrode, resulting in partial correspondence between said channel and said gate electrode.
Claim 42
Dependent Claim
80 words
An LC element according to claim 31, further comprising: a first input/output electrode electrically connected to said first diffusion region, a second input/output electrode electrically connected to said second diffusion region, a third input/output electrode electrically connected near one end of said gate electrode, and a fourth input/output electrode electrically connected near the other end of said gate electrode, wherein use is enabled as a common mode type element wherein both said channel and said gate are signal transmission lines.
Claim 43
Dependent Claim
35 words
An LC element according to claim 41, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 44
Dependent Claim
22 words
An LC element according to claim 41, wherein a buffer circuit is connected to the output side of said signal transmission line.
Claim 45
Dependent Claim
27 words
An LC element according to claim 41, wherein carriers are injected beforehand at a position corresponding to said gate electrode near the surface of said semiconductor substrate.
Claim 46
Dependent Claim
52 words
An LC element according to claim 41, wherein carriers are injected beforehand at a part of said channel near the surface of said semiconductor substrate to set a channel length one of longer and shorter with respect to said gate electrode, resulting in partial correspondence between said channel and said gate electrode.
Claim 47
Dependent Claim
23 words
An LC element according to claim 1, wherein said gate electrode is formed in one of a straight line and an arc shape.
Claim 48
Dependent Claim
104 words
An LC element comprising: a gate electrode having a given inductance formed on a semiconductor substrate; an insulation layer formed between said gate electrode and said semiconductor substrate; a channel formed in correspondence to said gate electrode within said semiconductor substrate, said channel being formed by application of a gate voltage to the gate electrode; and a diffusion region formed near at least one end of the channel, wherein said gate electrode and said channel function as inductors, a capacitance formed between said gate electrode inductance and said channel inductance exists as distributed constants, said gate electrode is used as a signal transmission line.
Claim 49
Dependent Claim
104 words
An LC element comprising: a gate electrode having a given inductance formed on a semiconductor substrate; an insulation layer formed between said gate electrode and said semiconductor substrate; a channel formed in correspondence to said gate electrode within said semiconductor substrate, said channel being formed by application of a gate voltage to the gate electrode; and a diffusion region formed near at least one end of the channel, wherein said gate electrode and said channel function as inductors, a capacitance formed between said gate electrode inductance and said channel inductance exists as distributed constants, said gate electrode is used as a signal transmission line.
Claim 50
Dependent Claim
29 words
An LC element according to claim 47, wherein providing a protector circuit for said gate electrode whereby excess voltage is bypassed to the operating power supply line or ground.
Claim 51
Dependent Claim
68 words
An LC element according to claim 47, wherein said channel formed in correspondence with said gate electrode is divided into a plurality of segments by injecting carriers beforehand in a portion of said channel, said diffusion region is provided near at least one end of the respective channel segments, and each said diffusion region provided near said at least one of the ends being mutually and electrically connected.
Claim 52
Dependent Claim
52 words
An LC element according to claim 47, wherein the LC element is formed as a portion of a semiconductor substrate in unitized construction so that at least one of said gate electrode and the channel formed in correspondence thereof is inserted into one of a signal line and a power supply line.
Claim 53
Dependent Claim
88 words
An LC element according to claim 47 further comprising: a first input/output electrode electrically connected near one end of said gate electrode, a second input/output electrode electrically connected near the other end of said gate electrode, and a ground electrode electrically connected to said diffusion region formed near one end of said channel, wherein a signal is input to one of said first and second input/output electrodes and output from the other, and said ground electrode is connected to one of a fixed potential power supply and ground.
Claim 54
Dependent Claim
35 words
An LC element according to claim 51, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 55
Dependent Claim
22 words
An LC element according to claim 51, wherein a buffer circuit is connected to the output side of said signal transmission line.
Claim 56
Dependent Claim
27 words
An LC element according to claim 51, wherein carriers are injected beforehand at a position corresponding to said gate electrode near the surface of said semiconductor substrate.
Claim 57
Dependent Claim
52 words
An LC element according to claim 51, wherein carriers are injected beforehand at a part of said channel near the surface of said semiconductor substrate to set a channel length one of longer and shorter with respect to said gate electrode, resulting in partial correspondence between said channel and said gate electrode.
Claim 58
Dependent Claim
17 words
An LC element according to claim 47, wherein said gate electrode is formed in a spiral shape.
Claim 59
Dependent Claim
35 words
An LC element according to claim 56, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 60
Dependent Claim
31 words
An LC element according to claim 56, wherein providing a protector circuit for said gate electrode whereby excess voltage is bypassed to one of an operating power supply line and ground.
Claim 61
Dependent Claim
67 words
An LC element according to claim 56, wherein said channel formed in correspondence with said gate electrode is divided into a plurality of segments by injecting carriers beforehand in a portion of said channel, said diffusion region is provided near at least one end of the respective channel segments, and each said diffusion region provided near at least one of the ends being mutually and electrically connected.
Claim 62
Dependent Claim
52 words
An LC element according to claim 56, wherein the LC element is formed as a portion of a semiconductor substrate in unitized construction so that at least one of said gate electrode and the channel formed in correspondence thereof is inserted into one of a signal line and a power supply line.
Claim 63
Dependent Claim
89 words
An LC element according to claim 56 further comprising: a first input/output electrode electrically connected near one end of said gate electrode, a second input/output electrode electrically connected near the other end of said gate electrode, and a ground electrode electrically connected to said diffusion region formed near one end of said channel, wherein a signal is input to either one of said first and second input/output electrodes and output from the other, and said ground electrode is connected to one of a fixed potential power supply and ground.
Claim 64
Dependent Claim
36 words
An LC element according to claim 61, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably control led.
Claim 65
Dependent Claim
22 words
An LC element according to claim 61, wherein a buffer circuit is connected to the output side of said signal transmission line.
Claim 66
Dependent Claim
28 words
An LC element according to claim 61, wherein carriers are injected beforehand at a position corresponding to said gate electrode near the surface of said semi conductor substrate.
Claim 67
Dependent Claim
53 words
An LC element according to claim 61, wherein carriers are injected beforehand at a part of said channel near the surface of said semiconductor substrate to set a channel length one of and longer and shorter with respect to said gate electrode, resulting in partial correspondence between said channel and said gate electrode.
Claim 68
Dependent Claim
17 words
An LC element according to claim 47, wherein said gate electrode is formed in a meander shape.
Claim 69
Dependent Claim
35 words
An LC element according to claim 66, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 70
Dependent Claim
31 words
An LC element according to claim 66, wherein providing a protector circuit for said gate electrode whereby excess voltage is bypassed to one of an operating power supply line and ground.
Claim 71
Dependent Claim
67 words
An LC element according to claim 66, wherein said channel formed in correspondence with said gate electrode is divided into a plurality of segments by injecting carriers beforehand in a portion of said channel, said diffusion region is provided near at least one end of the respective channel segments, and each said diffusion region provided near at least one of the ends being mutually and electrically connected.
Claim 72
Dependent Claim
52 words
An LC element according to claim 66, wherein the LC element is formed as a portion of a semiconductor substrate in unitized construction so that at least one of said gate electrode and said channel formed in correspondence thereof is inserted into one of a signal line and a power supply line.
Claim 73
Dependent Claim
88 words
An LC element according to claim 66 further comprising: a first input/Output electrode electrically connected near one end of said gate electrode, a second input/output electrode electrically connected near the other end of said gate electrode, and a ground electrode electrically connected to said diffusion region formed near one end of said channel, wherein a signal is input to one of said first and second input/output electrodes and output from the other, and said ground electrode is connected to one of a fixed potential power supply and ground.
Claim 74
Dependent Claim
35 words
An LC element according to claim 71, wherein as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 75
Dependent Claim
22 words
An LC element according to claim 71, wherein a buffer circuit is connected to the output side of said signal transmission line.
Claim 76
Dependent Claim
27 words
An LC element according to claim 71, wherein carriers are injected beforehand at a position corresponding to said gate electrode near the surface of said semiconductor substrate.
Claim 77
Dependent Claim
52 words
An LC element according to claim 71, wherein carriers are injected beforehand at a part of said channel near the surface of said semiconductor substrate to set a channel length one of longer and shorter with respect to said gate electrode, resulting in partial correspondence between said channel and said gate electrode.
Claim 78
Dependent Claim
23 words
An LC element according to claim 47, wherein said gate electrode is formed in one of a straight line and an arc shape.
Claim 79
Dependent Claim
117 words
An LC element comprising: a gate electrode having a given inductance formed on a semiconductor substrate; an insulation layer formed between said gate electrode and said semiconductor substrate; a channel formed in correspondence to said gate electrode within said semiconductor substrate; and a diffusion region formed near at least one end of the channel, wherein said gate electrode and said channel function as inductors; a capacitance formed between said gate electrode inductance and said channel inductance exists as distributed constants; said gate electrode is used as a signal transmission line; as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
Claim 80
Dependent Claim
117 words
An LC element comprising: a gate electrode having a given inductance formed on a semiconductor substrate; an insulation layer formed between said gate electrode and said semiconductor substrate; a channel formed in correspondence to said gate electrode within said semiconductor substrate; and a diffusion region formed near at least one end of the channel, wherein said gate electrode and said channel function as inductors; a capacitance formed between said gate electrode inductance and said channel inductance exists as distributed constants; said gate electrode is used as a signal transmission line; as a result of variably setting a gate voltage applied with respect to said gate electrode, at a minimum, the resistance of said channel is variably controlled.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-19 | 1999-09-18 | 2000-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-19 | 2003-09-18 | 2004-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-19 | 2007-09-18 | 2008-03-19 | $7700.00 | Window Closed / Lapsed |