Patent US5500256A successfully refreshed from Google Patents.
US5500256A
Expired / Lapsed
US
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Dry process apparatus using plural kinds of gas
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1995-05-24
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Granted: 1996-03-19
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Expires: 2015-05-24
Abstract
Abstract An apparatus for manufacturing a semiconductor device including: a process chamber capable of being evacuated; a wafer susceptor disposed in the process chamber, the wafer susceptor having a plane on which a wafer to be processed is placed; a plurality of gas flow paths forming a structure of a plurality of spirals, facing the table, and being disposed along a flat plane generally parallel to the plane of the susceptor; and a plurality of gas ejecting holes formed in a plane of the gas flow paths facing the susceptor, for and along each gas flow path. A plurality of processes can be performed in the same chamber.
Inventors
- 👤 Masahiro Watabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:31
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45574; C23C16/45561; C23C16/45565; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
94 words
A vapor phase processing system comprising: a process chamber capable of being evacuated; a wafer susceptor disposed in the process chamber, the wafer susceptor having a plane on which a wafer to be processed is placed; a plurality of gas flow paths forming a structure of a plurality of spirals, facing the wafer susceptor, and being disposed along a flat plane generally parallel to the wafer susceptor; and a plurality of gas supply holes formed in a plane of the gas flow paths facing the wafer susceptor, for and along each gas flow path.
Claim 2
Dependent Claim
94 words
A vapor phase processing system comprising: a process chamber capable of being evacuated; a wafer susceptor disposed in the process chamber, the wafer susceptor having a plane on which a wafer to be processed is placed; a plurality of gas flow paths forming a structure of a plurality of spirals, facing the wafer susceptor, and being disposed along a flat plane generally parallel to the wafer susceptor; and a plurality of gas supply holes formed in a plane of the gas flow paths facing the wafer susceptor, for and along each gas flow path.
Claim 3
Dependent Claim
31 words
A vapor phase processing apparatus according to claim 1, wherein all of the plurality of gas flow paths are formed to have the same conductance of gas flow under equivalent conditions.
Claim 4
Dependent Claim
28 words
A vapor phase processing apparatus according to claim 1, wherein the size of each of the gas supply holes is different form one gas flow path to another.
Claim 5
Dependent Claim
25 words
A vapor phase processing apparatus according to claim 1, wherein the pitch of the gas supply holes is different from one flow path to another.
Claim 6
Dependent Claim
44 words
A vapor phase processing apparatus according to claim 1, further comprising a plurality of gas pipes for supplying a process gas to respective gas flow paths, each gas pipe being connected to the inner spiral start area of one of the gas flow paths.
Claim 7
Dependent Claim
53 words
A vapor phase processing apparatus according to claim 1, wherein the plurality of gas flow paths are made of conductive material, and the vapor phase process apparatus further comprises one or more high frequency power sources for supplying a high frequency power to one or more of the plurality of gas flow paths.
Claim 8
Dependent Claim
39 words
A vapor phase processing apparatus according to claim 6, wherein the plurality of gas flow paths are electrically isolated from each other and the high frequency power source is provided for each of the plurality of gas flow paths.
Claim 9
Dependent Claim
45 words
A vapor phase processing apparatus according to claim 7, wherein one of the one or more high frequency power sources is adapted to supply a high frequency power at two or more frequencies superposed on each other and at a desired frequency component power ratio.
Claim 10
Dependent Claim
33 words
A vapor phase processing apparatus according to claim 6, wherein the plane of the plurality of gas flow paths facing the susceptor is a flat plane parallel to the plane of the susceptor.
Claim 11
Dependent Claim
33 words
A vapor phase processing apparatus according to claim 7, wherein the plane of the plurality of gas flow paths facing the susceptor is a flat plane parallel to the plane of the susceptor.
Claim 12
Independent Claim
146 words
A method for a vapor phase process comprising: a step of placing a wafer to be processed, in a process chamber capable of being evacuated; a first vapor phase process step of processing the wafer by supplying a first process gas from a first gas flow path group including one or more gas flow paths, the first gas flow path group being selected from a plurality of gas flow paths disposed along a flat plane generally parallel to the wafer and forming a structure of a plurality of spirals, each gas flow path independently supplying a process gas; and a second vapor phase process step of processing the wafer by supplying out a second process gas from a second gas flow path group including one or more gas flow paths different from the first gas flow path group selected from the plurality of gas flow paths.
Claim 13
Independent Claim
146 words
A method for a vapor phase process comprising: a step of placing a wafer to be processed, in a process chamber capable of being evacuated; a first vapor phase process step of processing the wafer by supplying a first process gas from a first gas flow path group including one or more gas flow paths, the first gas flow path group being selected from a plurality of gas flow paths disposed along a flat plane generally parallel to the wafer and forming a structure of a plurality of spirals, each gas flow path independently supplying a process gas; and a second vapor phase process step of processing the wafer by supplying out a second process gas from a second gas flow path group including one or more gas flow paths different from the first gas flow path group selected from the plurality of gas flow paths.
Claim 14
Dependent Claim
47 words
A method for a vapor phase process according to claim 11, wherein one of the first and second vapor phase process steps processes the wafer while supplying a high frequency power to the plurality of gas flow paths and generating high frequency plasma in the process chamber.
Claim 15
Dependent Claim
45 words
A method for a vapor phase process according to claim 11, wherein the first and second vapor phase process steps process the wafer while supplying a high frequency power to the plurality of gas flow paths and generating high frequency plasma in the process chamber.
Claim 16
Dependent Claim
44 words
A method for a vapor phase process according to claim 13, wherein one of the first and second vapor phase process steps supplies a superposed high frequency power at two or more frequencies to one of the first and second gas flow path groups.
Claim 17
Dependent Claim
35 words
A method for a vapor phase process according to claim 11, wherein the first and second vapor phase process steps supply a high frequency power only to the first and second gas flow path groups.
Claim 18
Dependent Claim
76 words
A method for a vapor phase process according to claim 14, wherein the one of the first and second vapor phase process steps is a step of forming an SiN film by supplying a mixed gas of SiH 4 and NH 3 , and the other of the first and second vapor phase process steps is a process of forming an SiO 2 film by supplying a mixed gas of SiH 4 and N 2 O.
Claim 19
Dependent Claim
32 words
A method for a vapor phase process according to claim 11, wherein the first and second vapor phase process steps are repeated by a certain number of times for certain time periods.
Claim 20
Dependent Claim
26 words
A method for a vapor phase process according to claim 13, wherein the first and second vapor phase process steps are performed at the same time.
Claim 21
Dependent Claim
63 words
A method for a vapor phase process according to claim 18, wherein the first vapor phase process step is a step of forming an O 3 -TEOS oxide film by supplying a mixed gas of O 3 and tetraethoxysilane, and the second vapor phase process step is a step of cleaning an exposed surface of the wafer by supplying a gas containing fluorine.
Claim 22
Dependent Claim
95 words
A method for a vapor phase process according to claim 11, wherein gas flow paths are formed to have different conductance of gas flow, the first and second vapor phase process steps are performed under such a condition that gas pressures at the most upstream positions of the plurality of gas flow paths are generally equal to each other, and the first and second gas flow path groups include gas flow paths selected so as to set a flow rate ratio of the first process gas to the second process gas to a certain value.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-19 | 1999-09-18 | 2000-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-19 | 2003-09-18 | 2004-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-19 | 2007-09-18 | 2008-03-19 | $7700.00 | Window Closed / Lapsed |