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US5499668A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for making electronic device

Assignee: Hitachi Ltd
•
Filing: 1994-10-27
•
Granted: 1996-03-19
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Expires: 2014-10-27
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Abstract

Abstract Oxide films, and residues of organic matters, carbons, if any, are removed from a metal surface simply without using complicated steps and without giving adverse effects on electronic parts or electronic devices by irradiating the metal surface with a laser beam of lower energy level than energy capable of changing the metal surface structure, thereby cleaning the metal surface.

Inventors

  • 👤 Kaoru Katayama
  • 👤 Shinichi Kazui
  • 👤 Yasuhiro Iwata
  • 👤 Hiroshi Fukuda
  • 👤 Toshihiko Ohta

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-06 08:38
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12; B; B08; B08B; B08B7/00; B08B7/0035; B08B7/0042; B23; B23K; B23K1/00; B23K1/20; B23K1/206; B23K26/00; B23K26/36; B23K26/40; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/3489; H10W; H10W76/00; H10W76/60; B23K2101/00; B23K2101/36; B23K2103/00; B23K2103/08; B23K2103/14; B23K2103/18; B23K2103/26; H10W72/00; H10W72/01; H10W72/012; H10W72/01271; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; H10W72/07251; H10W72/20; H10W72/251; H10W72/252; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W76/10; H10W76/17

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 62 words
A process for a solder treatment, which comprises irradiating a surface of a solder bump or layer bonded to a ceramic substrate with a laser beam of lower energy level than energy capable of changing the solder surface structure, thereby cleaning the surface of said solder, and bonding an integrated circuit to said cleaned solder surface, said solder being comprised of Sn--Pb.
Claim 2
Dependent Claim 62 words
A process for a solder treatment, which comprises irradiating a surface of a solder bump or layer bonded to a ceramic substrate with a laser beam of lower energy level than energy capable of changing the solder surface structure, thereby cleaning the surface of said solder, and bonding an integrated circuit to said cleaned solder surface, said solder being comprised of Sn--Pb.
Claim 3
Dependent Claim 51 words
A process for making an electronic device, by connecting a part to a circuit wiring substrate by a solder, which comprises irradiating the solder with a laser beam, thereby cleaning the surface of the solder and then heating and melting the solder, thereby connecting the part to the circuit wiring substrate.
Claim 4
Dependent Claim 51 words
A process for making an electronic device, by connecting a part to a circuit wiring substrate by a solder, which comprises irradiating the solder with a laser beam, thereby cleaning the surface of the solder and then heating and melting the solder, thereby connecting the part to the circuit wiring substrate.
Claim 5
Dependent Claim 14 words
A process according to claim 2, wherein the part is a semiconductor integrated circuit.
Claim 6
Dependent Claim 18 words
A process according to claim 2, wherein the part is a seal cap of a semiconductor integrated circuit.
Claim 7
Dependent Claim 15 words
A process according to claim 2, wherein the circuit wiring substrate is a ceramic substrate.
Claim 8
Dependent Claim 56 words
A process for making an electronic device by connecting an LSI to a circuit substrate through a solder bump as a terminal, which comprises irradiating the solder bump with a laser beam, thereby cleaning the surface of the solder bump and then heating and melting the solder bump, thereby connecting the LSI to the circuit substrate.
Claim 9
Dependent Claim 56 words
A process for making an electronic device by connecting an LSI to a circuit substrate through a solder bump as a terminal, which comprises irradiating the solder bump with a laser beam, thereby cleaning the surface of the solder bump and then heating and melting the solder bump, thereby connecting the LSI to the circuit substrate.
Claim 10
Dependent Claim 14 words
A process according to claim 6, wherein the circuit substrate is a ceramic substrate.
Claim 11
Dependent Claim 20 words
A process according to claim 2, wherein the laser beam has a pulse span of not more than 1 microsecond.
Claim 12
Dependent Claim 19 words
A process according to claim 2, wherein the laser beam has a wavelength of 150 nm to 400 nm.
Claim 13
Dependent Claim 23 words
A process according to claim 2, wherein the laser beam has an energy density of 0.5 J/cm 2 to 4.0 J/cm 2 .

References Cited (Backward Citations)

WO1983001400A1 Cited
JPS62256961A Cited
JPS6397382A Cited
US4898650A Cited
US5024968A Cited
US5151135A Cited
US5328517A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-03-19 1999-09-18 2000-03-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-03-19 2003-09-18 2004-03-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-03-19 2007-09-18 2008-03-19 $7700.00 Window Closed / Lapsed

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