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US5497331A
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Semiconductor integrated circuit device fabrication method and its fabrication apparatus
Assignee: Hitachi Ltd
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Filing: 1994-06-08
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Granted: 1996-03-05
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Expires: 2014-06-08
Abstract
Abstract A semiconductor integrated circuit device fabrication technique improves the accuracy of element qualities by considering the influence of interaction of element quality parameters in the quality control of semiconductor fabrication processes and also by improving the product yield estimation accuracy so that the production efficiency can be improved. An initial value of a membership function is first set and then a plurality of element quality parameters and a combined quality parameter are expressed by membership functions in fuzzy control in a semiconductor fabrication apparatus for automating a fabrication method by connecting a computer with various measuring instruments and various processors by communication devices. Moreover, the combined quality parameters are fuzzy-inferred from the element quality parameters using these membership functions, inference rules are adjusted by data of the actual processes, the membership functions of the obtained element quality parameters are converted into an element quality control standard, and the semiconductor integrated circuit device fabrication processes are controlled in accordance with the standard.
Inventors
- 👤 Nobuyuki Iriki
- 👤 Tsutomu Okabe
- 👤 Kenji Watanabe
- 👤 Hisashi Maejima
- 👤 Shinji Kuniyoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 20:32
CPC Classifications
H; H10; H10P; H10P74/00; H10P74/23; Y; Y10; Y10S; Y10S706/00; Y10S706/90; Y10S706/902; Y10S706/903; Y10S706/904
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
66 words
A semiconductor integrated circuit device fabrication method for quality control semiconductor integrated circuit device fabrication processes, comprising the steps of adjusting membership functions used in fuzzy inference to improve the accuracy of inferring yield of the semiconductor integrated circuit device by using fuzzy inference, and controlling the semiconductor integrated circuit device fabrication processes under a desirable element quality parameter state obtained from the adjusted membership functions.
Claim 2
Dependent Claim
66 words
A semiconductor integrated circuit device fabrication method for quality control semiconductor integrated circuit device fabrication processes, comprising the steps of adjusting membership functions used in fuzzy inference to improve the accuracy of inferring yield of the semiconductor integrated circuit device by using fuzzy inference, and controlling the semiconductor integrated circuit device fabrication processes under a desirable element quality parameter state obtained from the adjusted membership functions.
Claim 3
Dependent Claim
65 words
A semiconductor integrated circuit device fabrication method for quality control, in semiconductor integrated circuit device fabrication processes, comprising the steps of fuzzy-inferring element quality parameters, adjusting parameters of membership functions of element qualities used in fuzzy inference to minimize inference errors, and controlling the semiconductor integrated circuit device fabrication processes by using the adjusted membership functions as a control standard of the element quality parameters.
Claim 4
Dependent Claim
65 words
A semiconductor integrated circuit device fabrication method for quality control, in semiconductor integrated circuit device fabrication processes, comprising the steps of fuzzy-inferring element quality parameters, adjusting parameters of membership functions of element qualities used in fuzzy inference to minimize inference errors, and controlling the semiconductor integrated circuit device fabrication processes by using the adjusted membership functions as a control standard of the element quality parameters.
Claim 5
Dependent Claim
123 words
A semiconductor integrated circuit device fabrication method according to claim 2, wherein the fuzzy inferring step comprises a first step of expressing the element quality parameter control standard by a membership function in fuzzy control, a second step of fuzzy-inferring combined quality parameters by using a plurality of element quality membership functions, and a third step of minimizing the sum of the squares of combined quality parameter errors fuzzy-inferred by a plurality of combinations of measured element quality parameters and corresponding measured combined quality parameter errors by adjusting parameters of membership functions showing the standard of the element quality parameters, wherein the membership functions obtained through the adjustment in the third step are used as the control standard of the element quality parameters.
Claim 6
Dependent Claim
156 words
A semiconductor integrated circuit device fabrication method according to claim 3, wherein the semiconductor integrated circuit device fabrication process is for quality control of a fine pattern formation, the element quality parameters are used as the registration accuracy and the dimension accuracy of a plurality of layers, a standard of the registration accuracy and the dimension accuracy of the layers is expressed in the first step, the decrease of the registration allowance due to combination of the registration accuracy and the dimension accuracy of the layers is fuzzy-inferred as the combined quality parameters in the second step, the membership functions are adjusted by using the registration allowance fuzzy-inferred by the measured registration accuracy and dimension accuracy of the layers and teacher data for measured registration allowance in the third step, and the membership functions determined through the above adjustments are used as the control standard of the registration accuracy and the dimension accuracy of the layers.
Claim 7
Dependent Claim
120 words
A semiconductor integrated circuit device fabrication method according to claim 4, wherein the combined quality parameters are used as data of fraction defective in semiconductor integrated circuit devices due to decrease of registration allowance, the data of the fraction defective in semiconductor integrated circuit devices due to decrease of registration allowance are fuzzy-inferred in the second step, the membership functions are adjusted by using the registration allowance fuzzy-inferred by the measured registration accuracy and dimension accuracy of a plurality of layers and teacher data of the measured fraction-defective data in the third step, and the membership functions determined through the above adjustment are used as the control standard of the registration accuracy and dimension accuracy of a plurality of layers.
Claim 8
Dependent Claim
117 words
A semiconductor integrated circuit device fabrication method according to claim 3, wherein the combined quality parameters are used as data for fraction defective in semiconductor integrated circuit devices due to a plurality of failure modes, the data for fraction defective in semiconductor integrated circuit devices due to the plurality of failure modes are fuzzy-interred in the second step, the membership functions are adjusted by using the fraction defective data of the failure modes fuzzy-inferred by a plurality of measured element quality parameters and the teacher data of the measured fraction defective data in the third step, and the membership functions determined through the adjustment are used as the control standard of a plurality of element quality parameters.
Claim 9
Dependent Claim
93 words
A semiconductor integrated circuit device fabrication method according to claim 6, comprising a fourth process of fuzzy-inferring the fraction defective in semiconductor integrated circuit devices due to the defective modes based on the results of measurement of the element quality parameters by using the membership functions determined by the adjustment in the third stop, and a fifth step of estimating the yield of the semiconductor integrated circuit devices in accordance with the fraction defective inferred in the fourth step, wherein production is controlled according to the estimated values obtained in the fifth step.
Claim 10
Dependent Claim
225 words
A semiconductor integrated circuit device fabrication apparatus used in forming a semiconductor integrated device using fuzzy inference for quality control comprising the first step of expressing an element quality parameter control standard by a membership function in fuzzy control, a second step of fuzzy-inferring combined quality parameters by using a plurality of element quality membership functions, and a third step of minimizing the sum of the squares of combined quality parameter errors fuzzy-inferred by a plurality of combinations of measured element quality parameters and corresponding measured combined quality parameter errors by adjusting parameters of membership functions showing the standard of the element quality parameters, and controlling the semiconductor integrated circuit device fabrication processes by using the membership functions obtained through the adjustments in the third step as a control standard of the element quality parameters, comprising: measuring instruments for measuring the element quality parameters; inspecting devices for measuring the combined quality parameters; data transfer means for connecting said measuring instruments and said inspecting devices; and a data processor for coordinating the first, second, and third steps, qualities, measuring points, and sample number of the semiconductor integrated circuit devices, collection of data from the measuring instruments and the inspecting devices, adjustment of the membership functions, and for performing inference of the combined quality parameters and controlling the qualities in the semiconductor integrated circuit device fabrication process.
Claim 11
Dependent Claim
225 words
A semiconductor integrated circuit device fabrication apparatus used in forming a semiconductor integrated device using fuzzy inference for quality control comprising the first step of expressing an element quality parameter control standard by a membership function in fuzzy control, a second step of fuzzy-inferring combined quality parameters by using a plurality of element quality membership functions, and a third step of minimizing the sum of the squares of combined quality parameter errors fuzzy-inferred by a plurality of combinations of measured element quality parameters and corresponding measured combined quality parameter errors by adjusting parameters of membership functions showing the standard of the element quality parameters, and controlling the semiconductor integrated circuit device fabrication processes by using the membership functions obtained through the adjustments in the third step as a control standard of the element quality parameters, comprising: measuring instruments for measuring the element quality parameters; inspecting devices for measuring the combined quality parameters; data transfer means for connecting said measuring instruments and said inspecting devices; and a data processor for coordinating the first, second, and third steps, qualities, measuring points, and sample number of the semiconductor integrated circuit devices, collection of data from the measuring instruments and the inspecting devices, adjustment of the membership functions, and for performing inference of the combined quality parameters and controlling the qualities in the semiconductor integrated circuit device fabrication process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-03-05 | 1999-09-04 | 2000-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-05 | 2003-09-04 | 2004-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-05 | 2007-09-04 | 2008-03-05 | $7700.00 | Window Closed / Lapsed |