US5496767A
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Semiconductor laser and manufacturing method of the same
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1994-04-28
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Granted: 1996-03-05
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Expires: 2014-04-28
Abstract
Abstract A semiconductor laser comprises an optical wave guide layer including an AlGaInP active layer and AlGaInP optical confinement layers holding the active layer therebetween. A well structure of an energy band is formed and a compressive stress is applied to the activation layer by the difference between the compositions of the activation layer and the optical confinement layers. Since the compressive stress is applied to the activation layer, the oscillation threshold is lower than that of an un-strained device. Accordingly, the rise of the oscillation threshold due to the addition of Al is compensated and continuous oscillation at room temperature is attained and visible light having a wavelength of 0.67 μm or lower, which has been difficult to attain in the past, is produce. The semiconductor laser having a multi-quantum well structure is manufactured by using AlGaInP or GaInP as a semiconductor material of the multi-quantum well structure and epitaxially growing by periodically changing a supply rate of only In. Through a very simple method of periodically changing the supply rate of only In, a well layer having a compressive stress applied thereto and a barrier layer having a tensile stress applied thereto are alternately grown and the activation layer having the desired strained multi-quantum well structure is produced.
Inventors
- 👤 Ichiro Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:14
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/20; H01S5/30; H01S5/34; H01S5/343; H01S5/34326; H10H20/01; H10H20/011; H10H20/013; H01S5/2004; H01S5/22; H01S5/223; H01S5/2231; H01S5/32; H01S5/3201; H01S5/3211; H01S5/323; H01S5/32308; H01S5/32325; H01S5/3403; H01S5/3406; H01S5/3407; H01S5/40
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
38 words
A method for manufacturing a semiconductor laser having a multi-quantum well structure of AlGaInP formed in an active layer, comprising the step of: epitaxially growing the multi-quantum well structure by periodically changing a supply rate of only In.
Claim 2
Independent Claim
38 words
A method for manufacturing a semiconductor laser having a multi-quantum well structure of AlGaInP formed in an active layer, comprising the step of: epitaxially growing the multi-quantum well structure by periodically changing a supply rate of only In.
Claim 3
Dependent Claim
39 words
A method for manufacturing a semiconductor laser according to claim 1 wherein the epitaxial growth is done by OMVPE, and the supply rate of In is periodically changed by periodically changing a flow rate of organic In source gas.
Claim 4
Dependent Claim
20 words
A method for manufacturing a semiconductor laser of according to claim 2 wherein the organic In source gas is TMI.
Claim 5
Dependent Claim
72 words
A method for manufacturing a semiconductor laser according to claim 1, further comprising the steps of: preparing first and second In source injection cells; activating the first In source injection cell; and periodically activating and deactivating the second In source injection cell while the first In source injection cell is activated for periodically changing the supply rate of only In, wherein the step of epitaxially growing is performed by molecular beam epitaxy.
Claim 6
Independent Claim
68 words
A method for manufacturing a semiconductor laser having a multi-quantum well structure of AlGaInP formed in an active layer, comprising the step of: forming the multi-quantum well structure in the active layer by organo-metallic vapor phase epitaxy, wherein the organo-metallic vapor phase epitaxy is performed by periodically changing a flow rate of organic In source gas and maintaining a flow rate of other organic source gases as constant.
Claim 7
Independent Claim
68 words
A method for manufacturing a semiconductor laser having a multi-quantum well structure of AlGaInP formed in an active layer, comprising the step of: forming the multi-quantum well structure in the active layer by organo-metallic vapor phase epitaxy, wherein the organo-metallic vapor phase epitaxy is performed by periodically changing a flow rate of organic In source gas and maintaining a flow rate of other organic source gases as constant.
Claim 8
Dependent Claim
14 words
A method according to claim 5, wherein the organic In source gas is TMI.
Claim 9
Independent Claim
68 words
A method for manufacturing a semiconductor laser having a multi-quantum well structure of GaInP formed in an active layer, comprising the step of: forming the multi-quantum well structure in the active layer by organo-metallic vapor phase epitaxy, wherein the organo-metallic vapor phase epitaxy is performed by periodically changing a flow rate of organic In source gas and maintaining a flow rate of other organic source gases as constant.
Claim 10
Independent Claim
68 words
A method for manufacturing a semiconductor laser having a multi-quantum well structure of GaInP formed in an active layer, comprising the step of: forming the multi-quantum well structure in the active layer by organo-metallic vapor phase epitaxy, wherein the organo-metallic vapor phase epitaxy is performed by periodically changing a flow rate of organic In source gas and maintaining a flow rate of other organic source gases as constant.
Claim 11
Dependent Claim
14 words
A method according to claim 7, wherein the organic In source gas is TMI.
Claim 12
Independent Claim
47 words
A method for manufacturing a semiconductor laser having a multi-quantum well structure of GaInP formed in an active layer, comprising the steps of: epitaxially growing the multi-quantum well structure by periodically changing a supply rate of In; and maintaining a supply rate of other materials as constant.
Claim 13
Independent Claim
47 words
A method for manufacturing a semiconductor laser having a multi-quantum well structure of GaInP formed in an active layer, comprising the steps of: epitaxially growing the multi-quantum well structure by periodically changing a supply rate of In; and maintaining a supply rate of other materials as constant.
Claim 14
Dependent Claim
38 words
A method according to claim 9, wherein the step of epitaxially growing is performed by organo-metallic vapor phase epitaxy, and the supply rate of In is defined by periodically changing a flow rate of organic In source gas.
Claim 15
Dependent Claim
14 words
A method according to claim 10, wherein the organic In source gas is TMI.
Claim 16
Dependent Claim
66 words
A method according to claim 9, further comprising the steps of: preparing first and second In source injection cells; activating the first In source injection cell; and periodically activating and deactivating the second In source injection cell while the first In source injection cell is activated for periodically changing the supply rate of In, wherein the step of epitaxially growing is performed by molecular beam epitaxy.
Claim 17
Independent Claim
87 words
A method for manufacturing a semiconductor laser having a multi-quantum well structure of AlGaInP formed in an active layer, comprising the steps of: forming the multi-quantum well structure in the active layer by molecular beam epitaxy with first and second In source injection cells; activating the first In source injection cell; periodically activating and deactivating the second In source injection cell while the first In source injection cell is activated for periodically changing the supply rate of In; and maintaining a supply rate of Al as constant.
Claim 18
Independent Claim
87 words
A method for manufacturing a semiconductor laser having a multi-quantum well structure of AlGaInP formed in an active layer, comprising the steps of: forming the multi-quantum well structure in the active layer by molecular beam epitaxy with first and second In source injection cells; activating the first In source injection cell; periodically activating and deactivating the second In source injection cell while the first In source injection cell is activated for periodically changing the supply rate of In; and maintaining a supply rate of Al as constant.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-03-05 | 1999-09-04 | 2000-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-05 | 2003-09-04 | 2004-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-05 | 2007-09-04 | 2008-03-05 | $7700.00 | Window Closed / Lapsed |