US5034957A
Expired / Lapsed
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Semiconductor laser device
Assignee: Toshiba Corp
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Filing: 1989-02-07
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Granted: 1991-07-23
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Expires: 2009-02-07
Abstract
Abstract A semiconductor laser device using double heterostructure comprised of In x Ga y Al 1-x-y P (0≦x≦1, 0≦y≦1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate, comprised of In x Ga y Al 1-x-y P (0≦x≦1, 0≦y≦1) including an active layer, the active layer having an impurity concentration not greater than 5×10 16 cm -3 . The device may include a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and p-type In q (Ga 1-z Al z ) q P (0≦q≦1, 0≦z≦1) cladding layer with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate, comprised of In x Ga y Al 1-x-y P (0≦x≦1, 0≦y≦1) including an n-type cladding layer and an p-type cladding layer, one of the n-type cladding layer and the p-type cladding layer being Si-doped. A method of manufacturing the device is also disclosed.
Inventors
- 👤 Yasuo Ohba
- 👤 Yukie Nishikawa
- 👤 Hajime Okuda
- 👤 Masayuki Ishikawa
- 👤 Hideto Sugawara
- 👤 Hideo Shiozawa
- 👤 Yoshihiro Kokubun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 08:26
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/30; H01S5/305; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H01S5/2054; H01S5/2059; H01S5/22; H01S5/2205; H01S5/2206; H01S5/223; H01S5/2231; H01S5/3054
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
65 words
A semiconductor laser device, comprising: a resonant cavity; two electrodes; a GaAs substrate positioned between the two electrodes, and a double heterostructure formed on the GaAs substrate, comprising an active layer positioned between two cladding layers of an alloy In 1-x (Ga 1-y Al y ) x P in which 0<x<1 and 0<y≦1 and having a carrier concentration less than 5×10 16 cm -3 .
Claim 2
Dependent Claim
65 words
A semiconductor laser device, comprising: a resonant cavity; two electrodes; a GaAs substrate positioned between the two electrodes, and a double heterostructure formed on the GaAs substrate, comprising an active layer positioned between two cladding layers of an alloy In 1-x (Ga 1-y Al y ) x P in which 0<x<1 and 0<y≦1 and having a carrier concentration less than 5×10 16 cm -3 .
Claim 3
Dependent Claim
41 words
The device of claim 1, wherein the double heterostructure further includes a Zn-doped p-type cladding layer, the Zn-doped p-type cladding layer having a carrier concentration not greater than one half of a maximum value for the carrier concentration obtainable by Zn-doping.
Claim 4
Dependent Claim
102 words
The device of claim 1, wherein the double heterostructure comprises: an n-type cladding layer of the quaternary alloy of InGaAlP; an InGaP active layer in contact with the n-type cladding layer a p-type cladding layer of the alloy of InGaAlP in contact with the InGaP active layer; a p-type InGaP capping layer in contact with the p-type cladding layer; an n-type GaAs block layer in contact with the p-type InGaP capping layer; and a p-type GaAs contact layer in contact with the n-type GaAs block layer including a current pinching section which is also in contact with the p-type InGaP capping layer.
Claim 5
Dependent Claim
139 words
The device of claim 1, wherein the double heterostructure comprises: an n-type cladding layer of the alloy of InGaAlP; an InGaP active layer in contact with the n-type cladding layer; a p-type cladding layer of the alloy of InGaAlP in contact with the InGaP active layer; a p-type InGaP etching stop layer in contact with the p-type cladding layer; an n-type GaAs current block layer in contact with the p-type InGaP etching stop layer; a mesa-shaped p-type cladding layer of the the alloy of InGaAlP in contact with the InGaP etching stop layer; a p-type InGaP intermediate band gap layer in contact with the mesa-shaped p-type cladding layer; and a p-type InGaP contact layer in contact with the n-type GaAs current block layer including a section which is also in contact with the p-type InGaP intermediate band gap layer.
Claim 6
Dependent Claim
14 words
The semiconductor laser device of claim 1, wherein the n-type cladding layer is Si-doped.
Claim 7
Dependent Claim
22 words
The device of claim 5, wherein the Si-doped n-type cladding layer has a carrier concentration less than 5×10 17 cm -3 .
Claim 8
Dependent Claim
26 words
The device of claim 5, further comprising a n-type GaAs current block layer in contact with the p-type cladding layer, the current block layer being Se-doped.
Claim 9
Dependent Claim
24 words
The device of claim 1, wherein the active layer is In 1-m (Ga 1-n Al n ) m P in which 0<m<1 and 0≦n<1.
Claim 10
Dependent Claim
60 words
The device of claim 8, wherein one of the cladding layers is an n-type cladding layer of In 1-x (Ga 1-y Al y ) x P where 0<x<1 and 0<y≦1, and the other cladding layer is a p-type cladding layer of In 1-s (Ga 1-t Al t ) s P where 0<s<1 and 0≦t<1 in contact with the active layer.
Claim 11
Dependent Claim
63 words
A semiconductor laser device, comprising: a resonant cavity; two electrodes; a GaAs substrate positioned between the two electrodes, and a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and a p-type cladding layer of an alloy of In 1-q (Ga 1-z Al z ) q P wherein z is between 0.65 and 0.75 and q is less than 1.
Claim 12
Dependent Claim
63 words
A semiconductor laser device, comprising: a resonant cavity; two electrodes; a GaAs substrate positioned between the two electrodes, and a double heterostructure formed on the GaAs substrate, comprised of InGaP active layer and a p-type cladding layer of an alloy of In 1-q (Ga 1-z Al z ) q P wherein z is between 0.65 and 0.75 and q is less than 1.
Claim 13
Dependent Claim
12 words
The device of claim 10, wherein q is between 0.45 and 0.55.
Claim 14
Dependent Claim
25 words
The device of claim 11, wherein the p-type cladding layer has a carrier concentration between 2×10 17 cm -3 and 5×10 17 cm -3 .
Claim 15
Dependent Claim
21 words
The device of claim 11, wherein the p-type cladding layer has a photoluminescence peak wavelength between 530 nm and 550 nm.
Claim 16
Dependent Claim
37 words
The device of claim 10, wherein the double heterostructure further comprises an n-type cladding layer of an alloy In 1-h (Ga 1-g Al g ) h P wherein z is between 0.65 and 0.75, 0<g<1 and 0<h<1.
Claim 17
Dependent Claim
15 words
The device of claim 14, wherein a value of q is between 0.45 and 0.55.
Claim 18
Dependent Claim
25 words
The device of claim 15, wherein the p-type cladding layer has a carrier concentration between 2×10 17 cm -3 and 5×10 17 cm -3 .
Claim 19
Dependent Claim
21 words
The device of claim 15, wherein the p-type cladding layer has a photoluminescence peak wavelength between 530 nm and 550 nm.
Claim 20
Dependent Claim
24 words
The device of claim 10, wherein the active layer is In 1-m (Ga 1-n Al n ) m P in which 0<m<1 and 0≦n<1.
Claim 21
Dependent Claim
159 words
The device of claim 10, wherein the double heterostructure further comprises: a p-type In 1-j (Ga 1-k Al k ) j P (0<j<1, 0≦k<1) etching stop layer in contact with the p-type In 1-s (Ga 1-t Al t ) s P (0<s<1, 0<t<1) cladding layer and the mesa-shaped p-type In 1-e (Ga 1-f Al f ) e P (0<e<1, 0<f≦1) cladding layer; an n-type GaAs current block layer in contact with the p-type In 1-j (Ga 1-k Al k ) j P (0<j<1, 0≦k<1) etching stop layer; a p-type In a Ga 1-a P (0<a<1) intermediate band gap layer in contact with the mesa-shaped p-type In 1-e (Ga 1-f Al f ) e P (0<e<1, 0<f≦1) cladding layer; and a p-type In c Ga 1-c P (0<c<1) contact layer in contact with the n-type GaAs current block layer including a section which is also in contact with the p-type In a Ga 1-a P (0<a<1) intermediate band gap layer.
Claim 22
Dependent Claim
14 words
The semiconductor laser device of claim 10, wherein the n-type cladding layer is Si-doped.
Claim 23
Dependent Claim
22 words
The device of claim 20, wherein the Si-doped n-type cladding layer has a carrier concentration less than 5×10 17 cm -3 .
Claim 24
Dependent Claim
26 words
The device of claim 20, further comprising a n-type GaAs current block layer in contact with the p-type cladding layer, the current block layer being Si-doped.
References Cited (Backward Citations)
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