Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
58 words
A process for removing fine particles from a wafer surface of a wafer comprising the steps of: forming a sublimable thin film on the wafer surface which has fine particles thereon, and removing the fine particles with the sublimable film from the wafer surface by supplying a jetting flow of highly pressurized inert gas to said wafer surface.
Claim 2
Dependent Claim
58 words
A process for removing fine particles from a wafer surface of a wafer comprising the steps of: forming a sublimable thin film on the wafer surface which has fine particles thereon, and removing the fine particles with the sublimable film from the wafer surface by supplying a jetting flow of highly pressurized inert gas to said wafer surface.
Claim 3
Dependent Claim
16 words
A process as set forth in claim 1, wherein said sublimable film is made of sulfur.
Claim 4
Dependent Claim
29 words
A process as set forth in claim 2, wherein said sublimable film is prepared from one or a mixture of gases including free sulfur generatable gas under discharge-dissociation conditions.
Claim 5
Dependent Claim
64 words
A process as set forth in claim 3, wherein said free sulfur generatable gas is selected from the group consisting of S 2 F 2 , SF 2 , SF 4 , S 2 F 10 , S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 , and SBr 2 .
Claim 6
Dependent Claim
16 words
A process as set forth in claim 1, wherein said sublimable film is made of polythiazyl.
Claim 7
Dependent Claim
31 words
A process as set forth in claim 5, wherein said sublimable film is prepared from one or a mixture of gases including free sulfur generatable gas under discharge-dissociation conditions and nitrogen.
Claim 8
Dependent Claim
64 words
A process as set forth in claim 6, wherein said free sulfur generatable gas is selected from the group consisting of S 2 F 2 , SF 2 , SF 4 , S 2 F 10 , S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 , and SBr 2 .
Claim 9
Dependent Claim
19 words
A process according to claim 1, wherein the step of removing includes heating to facilitate removal of the film.
Claim 10
Dependent Claim
32 words
A process according to claim 1, which includes a step of detecting the fine particles after the step of forming the film and before the step of removing the film and particles.
Claim 11
Dependent Claim
20 words
A process according to claim 9, wherein the step of removing includes heating to aid the removal of the film.
Claim 12
Dependent Claim
62 words
A process for removing fine particles from a wafer surface of a wafer comprising the steps of: forming a sublimable thin film containing sulfur on the wafer surface which has fine particles thereon, and supplying a jetting flow of highly pressurized inert gas to said wafer surface to remove the fine particles with said sublimable film of sulfur from the wafer surface.
Claim 13
Dependent Claim
62 words
A process for removing fine particles from a wafer surface of a wafer comprising the steps of: forming a sublimable thin film containing sulfur on the wafer surface which has fine particles thereon, and supplying a jetting flow of highly pressurized inert gas to said wafer surface to remove the fine particles with said sublimable film of sulfur from the wafer surface.
Claim 14
Dependent Claim
27 words
A process according to claim 11, wherein said sublimable film is prepared from one or a mixture of gases including free sulfur generatable gas under discharge-dissociation conditions.
Claim 15
Dependent Claim
62 words
A process according to claim 12, wherein said free sulfur generatable gas is selected from the group consisting of S 2 F 2 , SF 2 , SF 4 , S 2 F 10 , S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 , and SBr 2 .
Claim 16
Dependent Claim
14 words
A process according to claim 11, wherein said sublimable film is made of polythiazyl.
Claim 17
Dependent Claim
29 words
A process according to claim 14, wherein said sublimable film is prepared from one or a mixture of gases including free sulfur generatable gas under discharge-dissociation conditions and nitrogen.
Claim 18
Dependent Claim
62 words
A process according to claim 15, wherein said free sulfur generatable gas is selected from the group consisting of S 2 F 2 , SF 2 , SF 4 , S 2 F 10 , S 3 Cl 2 , S 2 Cl 2 , SCl 2 , S 3 Br 2 , S 2 Br 2 , and SBr 2 .