US5496408A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for producing compound semiconductor devices
Assignee: Mitsubishi Electric Corp
•
Filing: 1993-10-04
•
Granted: 1996-03-05
•
Expires: 2013-10-04
Abstract
Abstract An apparatus for producing a compound semiconductor layer includes a first flow rate controller for adjusting flow rates of respective material source gases, a gas mixing pipe for mixing the respective material source gases, gas distributing pipes for distributing gases and connected to the gas mixing pipe, a second flow rate controller for adjusting flow rates of the material source gases flowing through the gas distributing pipes and for supplying the material source gases to a reaction tube, a pressure detector for detecting pressure in the gas mixing pipe, and a third controller responsive to the pressure detector for controlling the second flow rate controller to maintain a constant pressure in the gas mixing pipe. Retardation of the gases between the first and second flow rate controllers is avoided, improving thickness uniformity in grown layers.
Inventors
- 👤 Takashi Motoda
- 👤 Shoichi Karakida
- 👤 Nobuaki Kaneno
- 👤 Shigeki Kageyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:29
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C23C16/448; C23C16/4481; C23C16/4482; C23C16/4485; C30; C30B; C30B25/00; C30B25/02; C30B25/14; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3418; H10P14/3421
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
135 words
An apparatus for producing a compound semiconductor layer comprising: first flow rate adjusting means for adjusting flow rates of respective material source gases; a gas mixing pipe connected to said first flow rate adjusting means for mixing the respective material source gases; a plurality of gas distributing pipes for distributing the material source gases, said gas distributing pipes being connected to said gas mixing pipe; second flow rate adjusting means for adjusting flow rates of the material source gases flowing in said gas distributing pipes and for supplying said material source gases to a reaction tube; means for detecting gas pressure in said gas mixing pipe; and control means responsive to said means for detecting gas pressure for controlling said second flow rate adjusting means to maintain a constant pressure in said gas mixing pipe.
Claim 2
Independent Claim
135 words
An apparatus for producing a compound semiconductor layer comprising: first flow rate adjusting means for adjusting flow rates of respective material source gases; a gas mixing pipe connected to said first flow rate adjusting means for mixing the respective material source gases; a plurality of gas distributing pipes for distributing the material source gases, said gas distributing pipes being connected to said gas mixing pipe; second flow rate adjusting means for adjusting flow rates of the material source gases flowing in said gas distributing pipes and for supplying said material source gases to a reaction tube; means for detecting gas pressure in said gas mixing pipe; and control means responsive to said means for detecting gas pressure for controlling said second flow rate adjusting means to maintain a constant pressure in said gas mixing pipe.
Claim 3
Dependent Claim
55 words
The apparatus of claim 1 comprising: first shut-off valves connecting said first mass flow controller to said gas mixing pipe; a material gas by-pass pipe to which carrier gas is supplied and which is connected to an exhaust output; and second shut-off valves connecting said first mass flow controller to said material gas by-pass pipe.
Claim 4
Dependent Claim
18 words
The apparatus of claim 1 wherein said first and second flow rate adjusting means are mass flow controllers.
Claim 5
Independent Claim
172 words
An apparatus for producing a compound semiconductor layer comprising: first flow rate adjusting means for adjusting flow rates of respective material source gases; a gas mixing pipe connected to said first flow rate adjusting means for mixing the respective material source gases; a plurality of gas distributing pipes for distributing the material source gases, said gas distributing pipes being connected to said gas mixing pipe; second flow rate adjusting means for adjusting flow rates of the material source gases flowing in said gas distributing pipes and for supplying said material source gases to a reaction tube; means for detecting gas pressure in said gas mixing pipe; a by-pass pipe branching from said gas mixing pipe for exhausting the material source gases from said gas mixing pipe; a by-pass pipe flow rate adjusting means for adjusting gas flow rate in said by-pass pipe; and control means responsive to said means for detecting gas pressure for controlling said by-pass pipe flow rate adjusting means to maintain a constant pressure in said gas mixing pipe.
Claim 6
Independent Claim
172 words
An apparatus for producing a compound semiconductor layer comprising: first flow rate adjusting means for adjusting flow rates of respective material source gases; a gas mixing pipe connected to said first flow rate adjusting means for mixing the respective material source gases; a plurality of gas distributing pipes for distributing the material source gases, said gas distributing pipes being connected to said gas mixing pipe; second flow rate adjusting means for adjusting flow rates of the material source gases flowing in said gas distributing pipes and for supplying said material source gases to a reaction tube; means for detecting gas pressure in said gas mixing pipe; a by-pass pipe branching from said gas mixing pipe for exhausting the material source gases from said gas mixing pipe; a by-pass pipe flow rate adjusting means for adjusting gas flow rate in said by-pass pipe; and control means responsive to said means for detecting gas pressure for controlling said by-pass pipe flow rate adjusting means to maintain a constant pressure in said gas mixing pipe.
Claim 7
Dependent Claim
57 words
The apparatus of claim 4 comprising: first shut-off valves connecting said first flow rate adjusting means to said gas mixing pipe; a material gas by-pass pipe to which carrier gas is supplied and which is connected to an exhaust output; and second shut-off valves connecting said first flow rate adjusting means to said material gas by-pass pipe.
Claim 8
Dependent Claim
18 words
The apparatus of claim 4 wherein said first and second flow rate adjusting means are mass flow controllers.
Claim 9
Independent Claim
134 words
An apparatus for producing a compound semiconductor layer comprising: first flow rate adjusting means for adjusting flow rates of respective material source gases; a gas mixing pipe connected to said first flow rate adjusting means for mixing the respective material source gases; a plurality of gas distributing pipes for distributing the material source gases, said gas distributing pipes being connected to said gas mixing pipe; second flow rate adjusting means for adjusting flow rates of the material source gases flowing in said gas distributing pipes and for supplying said material source gases to a reaction tube; means for detecting gas pressure in said gas mixing pipe; and control means responsive to said means for detecting gas pressure for controlling said first flowrate adjusting means to maintain a constant pressure in said gas mixing pipe.
Claim 10
Independent Claim
134 words
An apparatus for producing a compound semiconductor layer comprising: first flow rate adjusting means for adjusting flow rates of respective material source gases; a gas mixing pipe connected to said first flow rate adjusting means for mixing the respective material source gases; a plurality of gas distributing pipes for distributing the material source gases, said gas distributing pipes being connected to said gas mixing pipe; second flow rate adjusting means for adjusting flow rates of the material source gases flowing in said gas distributing pipes and for supplying said material source gases to a reaction tube; means for detecting gas pressure in said gas mixing pipe; and control means responsive to said means for detecting gas pressure for controlling said first flowrate adjusting means to maintain a constant pressure in said gas mixing pipe.
Claim 11
Dependent Claim
57 words
The apparatus of claim 7 comprising: first shut-off valves connecting said first flow rate adjusting means to said gas mixing pipe; a material gas by-pass pipe to which carrier gas is supplied and which is connected to an exhaust output; and second shut-off valves connecting said first flow rate adjusting means to said material gas by-pass pipe.
Claim 12
Dependent Claim
18 words
The apparatus of claim 7 wherein said first and second flow rate adjusting means are mass flow controllers.
Claim 13
Independent Claim
169 words
An apparatus for producing a compound semiconductor layer comprising: first flow rate adjusting means for adjusting flow rates of respective material source gases; a gas mixing pipe connected to said first flow rate adjusting means for mixing the respective material source gases; a plurality of gas distributing pipes for distributing the material source gases, said gas distributing pipes being connected to said gas mixing pipe; second flow rate adjusting means for adjusting flow rates of the material source gases flowing in said gas distributing pipes and for supplying said material source gases to a reaction tube; a carrier gas pipe connected to said gas mixing pipe for supplying a carrier gas; carrier gas flow rate adjusting means connected to said carrier gas pipe for adjusting carrier gas flow rate; means for detecting gas pressure in said gas mixing pipe; and control means responsive to said means for detecting gas pressure for controlling said carrier gas flow rate adjusting means to maintain a constant pressure in said gas mixing pipe;
Claim 14
Independent Claim
169 words
An apparatus for producing a compound semiconductor layer comprising: first flow rate adjusting means for adjusting flow rates of respective material source gases; a gas mixing pipe connected to said first flow rate adjusting means for mixing the respective material source gases; a plurality of gas distributing pipes for distributing the material source gases, said gas distributing pipes being connected to said gas mixing pipe; second flow rate adjusting means for adjusting flow rates of the material source gases flowing in said gas distributing pipes and for supplying said material source gases to a reaction tube; a carrier gas pipe connected to said gas mixing pipe for supplying a carrier gas; carrier gas flow rate adjusting means connected to said carrier gas pipe for adjusting carrier gas flow rate; means for detecting gas pressure in said gas mixing pipe; and control means responsive to said means for detecting gas pressure for controlling said carrier gas flow rate adjusting means to maintain a constant pressure in said gas mixing pipe;
Claim 15
Dependent Claim
57 words
The apparatus of claim 10 comprising: first shut-off valves connecting said first flow rate adjusting means to said gas mixing pipe; a material gas by-pass pipe to which carrier gas is supplied and which is connected to an exhaust output; and second shut-off valves connecting said first flow rate adjusting means to said material gas by-pass pipe.
Claim 16
Dependent Claim
18 words
The apparatus of claim 10 wherein said first and second flow rate adjusting means are mass flow controllers.
Claim 17
Dependent Claim
17 words
The apparatus of claim 10 wherein said carrier gas flow rate adjusting means are mass flow controllers.
Claim 18
Dependent Claim
24 words
The apparatus of claim 13 including a plurality of mass flow controllers and wherein said control means controls said plurality of mass flow controllers.
Claim 19
Independent Claim
208 words
An apparatus for producing a compound semiconductor layer comprising: first flow rate adjusting means for adjusting flow rates of respective material source gases; a gas mixing pipe connected to said first flow rate adjusting means for mixing the respective material source gases; carrier gas flow rate adjusting means for adjusting a flow rate of carrier gas supplied to said gas mixing pipe; a plurality of gas distributing pipes for distributing the material source gases, said gas distributing pipes being connected to said gas mixing pipe; second flow rate adjusting means for adjusting flow rates of the material source gases flowing in said gas distributing pipes and for supplying said material source gases to a reaction tube; means for detecting gas pressure in said gas mixing pipe; a by-pass pipe branching from said gas mixing pipe for exhausting gas from said gas mixing pipe and connected to said gas mixing pipe upstream of connections of said gas distribution pipes to said gas mixing pipe; by-pass pipe flow rate adjusting means for adjusting gas flow rate in said by-pass pipe; and control means responsive to said means for detecting gas pressure for controlling said by-pass pipe flow rate adjusting means to maintain a constant pressure in said gas mixing pipe.
Claim 20
Independent Claim
208 words
An apparatus for producing a compound semiconductor layer comprising: first flow rate adjusting means for adjusting flow rates of respective material source gases; a gas mixing pipe connected to said first flow rate adjusting means for mixing the respective material source gases; carrier gas flow rate adjusting means for adjusting a flow rate of carrier gas supplied to said gas mixing pipe; a plurality of gas distributing pipes for distributing the material source gases, said gas distributing pipes being connected to said gas mixing pipe; second flow rate adjusting means for adjusting flow rates of the material source gases flowing in said gas distributing pipes and for supplying said material source gases to a reaction tube; means for detecting gas pressure in said gas mixing pipe; a by-pass pipe branching from said gas mixing pipe for exhausting gas from said gas mixing pipe and connected to said gas mixing pipe upstream of connections of said gas distribution pipes to said gas mixing pipe; by-pass pipe flow rate adjusting means for adjusting gas flow rate in said by-pass pipe; and control means responsive to said means for detecting gas pressure for controlling said by-pass pipe flow rate adjusting means to maintain a constant pressure in said gas mixing pipe.
References Cited (Backward Citations)
US4533410A
Cited
JPS60138908A
Cited
US4950621A
Cited
JPS62105997A
Cited
US4761269A
Cited
JPH01140712A
Cited
US4980204A
Cited
US5200388A
Cited
JPH0233260A
Cited
US5069930A
Cited
JPH0345957A
Cited
JPH0382763A
Cited
US5304247A
Cited
US5190913A
Cited
US5336356A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-03-05 | 1999-09-04 | 2000-03-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-03-05 | 2003-09-04 | 2004-03-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-03-05 | 2007-09-04 | 2008-03-05 | $7700.00 | Window Closed / Lapsed |