US5495438A
Expired / Lapsed
US
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Nondestructive readout-type ferroelectric memory device having twisted hysteresis
Assignee: Olympus Corp
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Filing: 1994-10-24
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Granted: 1996-02-27
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Expires: 2014-10-24
Abstract
Abstract A first ferroelectric capacitor has a ferroelectric member having a film thickness and an area, and electrodes formed on both major surfaces of the member, respectively. Thus, the first ferroelectric capacitor has a polarization. A second ferroelectric capacitor has a ferroelectric member having a film thickness and an area, and electrodes formed on both major surfaces of the member, respectively. Thus, the second ferroelectric capacitor has a polarization. The first and second ferroelectric capacitors are connected parallel to each other, thereby forming a ferroelectric memory device. Since the ferroelectric memory device uses the synthesized hysteresis characteristics of the two ferroelectric capacitors of different coercive field values, it can use multi-value data, and perform nondestructive readout of data stored in the capacitors.
Inventors
- 👤 Masayoshi Omura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:24
CPC Classifications
H; H10; H10B; H10B53/00; G; G11; G11C; G11C11/00; G11C11/21; G11C11/22; G11C11/56; G11C11/5657
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
182 words
A ferroelectric memory device comprising: a plurality of memory cells arranged in a matrix, each memory cell including: a first ferroelectric capacitor which comprises a first ferroelectric member having a first film thickness and a first area, and a pair of electrodes comprising first and second electrodes formed on surfaces which each face the first ferroelectric member so as to hold the first ferroelectric member therebetween, the first ferroelectric capacitor having a first coercive field; and a second ferroelectric capacitor which comprises a second ferroelectric member having a second film thickness and a second area, wherein either said second film thickness differs from said first film thickness or said second area differs from said first area, a pair of electrodes comprising third and fourth electrodes formed on surfaces which each face the second ferroelectric member so as to hold the second ferroelectric member therebetween, the second ferroelectric capacitor having a second coercive field which is different from the first coercive field; and the first and second ferroelectric capacitors being connected parallel to each other via the first, second, third and fourth electrodes.
Claim 2
Dependent Claim
182 words
A ferroelectric memory device comprising: a plurality of memory cells arranged in a matrix, each memory cell including: a first ferroelectric capacitor which comprises a first ferroelectric member having a first film thickness and a first area, and a pair of electrodes comprising first and second electrodes formed on surfaces which each face the first ferroelectric member so as to hold the first ferroelectric member therebetween, the first ferroelectric capacitor having a first coercive field; and a second ferroelectric capacitor which comprises a second ferroelectric member having a second film thickness and a second area, wherein either said second film thickness differs from said first film thickness or said second area differs from said first area, a pair of electrodes comprising third and fourth electrodes formed on surfaces which each face the second ferroelectric member so as to hold the second ferroelectric member therebetween, the second ferroelectric capacitor having a second coercive field which is different from the first coercive field; and the first and second ferroelectric capacitors being connected parallel to each other via the first, second, third and fourth electrodes.
Claim 3
Dependent Claim
29 words
The ferroelectric memory device according to claim 1, wherein a ratio of the second film thickness to the first film thickness is set to a value higher than 2.
Claim 4
Dependent Claim
25 words
The ferroelectric memory device according to claim 1, wherein at least part of the first and second ferroelectric members is made of a same material.
Claim 5
Dependent Claim
21 words
The ferroelectric memory device according to claim 1, wherein the first and second ferroelectric members are made of a same material.
Claim 6
Dependent Claim
29 words
The ferroelectric memory device according to claim 4, wherein a ratio of the second coercive field to the first coercive field is set to a value higher than 2.
Claim 7
Dependent Claim
28 words
The ferroelectric memory device according to claim 1, wherein the second and fourth electrodes of the first and second ferroelectric capacitors are used as a common lower electrode.
Claim 8
Dependent Claim
20 words
The ferroelectric memory device according to claim 6, wherein the second ferroelectric capacitor is laminated on the first ferroelectric capacitor.
Claim 9
Dependent Claim
55 words
The ferroelectric memory device according to claim 6, wherein the first and second ferroelectric members, are made of a same ferroelectric material and are arranged adjacent to each other on the common lower electrode, the first and second ferroelectric capacitors differing from each other in at least one of said film thickness and said area.
Claim 10
Dependent Claim
26 words
The ferroelectric memory device according to claim 8, wherein the film thicknesses of the first and second ferroelectric members continuously vary in a linearly inclined manner.
Claim 11
Dependent Claim
181 words
A ferroelectric memory device comprising: first and second electrodes arranged parallel to each other, with a predetermined spacing therebetween; a ferroelectric member having a predetermined film thickness and area, the ferroelectric member having first and second major surfaces and the ferroelectric member being disposed such that the first and second major surfaces thereof contact the first and second electrodes, respectively, the ferroelectric member having an axis of polarization which is inclined relative to a direction perpendicular to the first and second major surfaces; and third and fourth electrodes formed on surfaces of the ferroelectric member which are opposite to each other and which are different from those surfaces of the ferroelectric member which contact the first and second electrodes; and wherein the first electrode is connected to one of the third and fourth electrodes so as to have the same potential as said one of the third and fourth electrodes, and the second electrode is connected to the other of the third and fourth electrodes so as to have the same potential as said other of the third and fourth electrodes.
Claim 12
Dependent Claim
181 words
A ferroelectric memory device comprising: first and second electrodes arranged parallel to each other, with a predetermined spacing therebetween; a ferroelectric member having a predetermined film thickness and area, the ferroelectric member having first and second major surfaces and the ferroelectric member being disposed such that the first and second major surfaces thereof contact the first and second electrodes, respectively, the ferroelectric member having an axis of polarization which is inclined relative to a direction perpendicular to the first and second major surfaces; and third and fourth electrodes formed on surfaces of the ferroelectric member which are opposite to each other and which are different from those surfaces of the ferroelectric member which contact the first and second electrodes; and wherein the first electrode is connected to one of the third and fourth electrodes so as to have the same potential as said one of the third and fourth electrodes, and the second electrode is connected to the other of the third and fourth electrodes so as to have the same potential as said other of the third and fourth electrodes.
References Cited (Backward Citations)
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