Patent US5493527A successfully refreshed from Google Patents.
US5493527A
Expired / Lapsed
US
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High density ROM with select lines
Assignee: United Microelectronics Corp
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Filing: 1995-01-09
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Granted: 1996-02-20
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Expires: 2015-01-09
Abstract
Abstract A read only memory cell array and method of operation thereof comprises an array of memory transistor cells, a plurality of word lines, a plurality of bit lines, a plurality of select bit lines, a plurality of bank select lines for enabling reading of a selected bank in the array connected to bank select transistors in the bank, a select even line adapted for enabling reading of even cells in a selected bank connected to select even cell transistors in the bank, and a select odd line adapted for enabling reading of odd cells in a selected bank connected to select odd cell transistors in the array.
Inventors
- 👤 Han-Shen Lo
- 👤 Te-Sun Wu
- 👤 Stephen S. Fu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:05
CPC Classifications
G; G11; G11C; G11C7/00; G11C17/00; G11C17/08; G11C17/10; G11C17/12; G11C17/126; G11C8/00; G11C8/12
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
217 words
A read only memory cell array comprising: an array of memory transistor cells , a plurality of word lines, a plurality of buried bit lines, a plurality of main bit lines parallel to said buried bit lines, with said main bit lines overlying alternate ones of said buried bit lines, a plurality of sets of parallel columns of said memory transistor cells in said array including a first set of columns of cells and a second column of cells, said first and second columns being in side by side parallel relationship, diffusion contacts connecting said main bit lines to bank select transistors, a plurality of bank select lines for enabling a reading of a selected bank in said array connected to said bank select transistors in said bank, a select even line adapted for enabling reading of a first set of said transistor cells in said first column of cells in a selected bank connected to select said first set of said transistor cells in said bank, and a select odd line adapted for enabling reading of a second set of said transistor cells in said second column of cells next in said array to said first column of cells in a selected bank connected to select said second set of said transistor cells in said array.
Claim 2
Dependent Claim
217 words
A read only memory cell array comprising: an array of memory transistor cells , a plurality of word lines, a plurality of buried bit lines, a plurality of main bit lines parallel to said buried bit lines, with said main bit lines overlying alternate ones of said buried bit lines, a plurality of sets of parallel columns of said memory transistor cells in said array including a first set of columns of cells and a second column of cells, said first and second columns being in side by side parallel relationship, diffusion contacts connecting said main bit lines to bank select transistors, a plurality of bank select lines for enabling a reading of a selected bank in said array connected to said bank select transistors in said bank, a select even line adapted for enabling reading of a first set of said transistor cells in said first column of cells in a selected bank connected to select said first set of said transistor cells in said bank, and a select odd line adapted for enabling reading of a second set of said transistor cells in said second column of cells next in said array to said first column of cells in a selected bank connected to select said second set of said transistor cells in said array.
Claim 3
Dependent Claim
62 words
A read only memory cell array in accordance with claim i wherein said select even lines are connected to the gates of FET transistors which are connected to said first set of transistor cells in said array, and said select odd lines are connected to the gates of FET transistors which connect to said second set of transistor cells in said array.
Claim 4
Dependent Claim
35 words
A read only memory cell array in accordance with claim 1 wherein said FET transistors connect to said bit lines of said second set of transistor cells and said first set of transistor cells respectively.
Claim 5
Dependent Claim
40 words
A read only memory cell array in accordance with claim i wherein said bank select transistors are connected to energize a first set of transistor cells and a second set of transistor cells, when said bank select transistors are energized.
Claim 6
Dependent Claim
36 words
A read only memory cell array in accordance with claim 1 wherein said buried bit lines comprise buried N+ bit lines, and said bank select transistors are connected to the column decoder of said cell array.
Claim 7
Dependent Claim
68 words
A read only memory cell array in accordance with claim 5 wherein said select even lines which connect to the gates of FET transistors which connect to first set of transistor cells in said array, and said select odd lines are connected to the gates of FET transistors which connect to the gates of FET transistors which connect to said second set of transistor cells in said array.
Claim 8
Dependent Claim
39 words
A read only memory cell array in accordance with claim 5 wherein said transistor cells connect to said bit lines of said first set of transistors and said second set of transistors respectively for selective energization of said cells.
Claim 9
Dependent Claim
38 words
A read only memory cell array in accordance with claim 6 wherein said bank select transistors are connected to energize said first set of transistors and said second set of transistors, when said bank select transistors are energized.
Claim 10
Dependent Claim
36 words
A read only memory cell array in accordance with claim 7 wherein said buried bit lines comprise buried N+ bit lines, and said bank select transistors are connected to the column decoder of said cell array.
Claim 11
Independent Claim
223 words
A method of operating a read only memory cell array comprising: an array of memory transistor cells, a plurality of word lines, a plurality of buried bit lines, a plurality of main bit lines parallel to said buried bit lines, with said main bit lines overlying alternate ones of said buried bit lines, a plurality of sets of parallel columns of said memory transistor cells in said array including a first set of columns of cells and a second column of cells, said first and second columns being in side by side parallel relationship, diffusion contacts connecting said main bit lines to a set of bank select transistors, employing a plurality of bank select lines for enabling a reading of a selected bank in said array connected to said bank select transistors in said bank, employing a select even line adapted for enabling reading of a first set of transistor cells in said first column of cells in a selected bank connected to select said first set of said transistor cells in said bank, and employing a select odd line adapted for enabling reading of a second set of transistor cells in said second column of cells next in said array to said first column of cells in a selected bank connected to select said second set of transistor cells in said array.
Claim 12
Independent Claim
223 words
A method of operating a read only memory cell array comprising: an array of memory transistor cells, a plurality of word lines, a plurality of buried bit lines, a plurality of main bit lines parallel to said buried bit lines, with said main bit lines overlying alternate ones of said buried bit lines, a plurality of sets of parallel columns of said memory transistor cells in said array including a first set of columns of cells and a second column of cells, said first and second columns being in side by side parallel relationship, diffusion contacts connecting said main bit lines to a set of bank select transistors, employing a plurality of bank select lines for enabling a reading of a selected bank in said array connected to said bank select transistors in said bank, employing a select even line adapted for enabling reading of a first set of transistor cells in said first column of cells in a selected bank connected to select said first set of said transistor cells in said bank, and employing a select odd line adapted for enabling reading of a second set of transistor cells in said second column of cells next in said array to said first column of cells in a selected bank connected to select said second set of transistor cells in said array.
Claim 13
Dependent Claim
66 words
A method of operating a read only memory cell array in accordance with claim 12 wherein said select even lines are connected to the gates of FET transistors which are connected to said first set of transistor cells in said array, and said select odd lines are connected to the gates of FET transistors which connect to said second set of transistor cells in said array.
Claim 14
Dependent Claim
39 words
A method of operating a read only memory cell array in accordance with claim 11 wherein said FET transistors connect to said bit lines of said second set of transistor cells and said first set of transistor cells respectively.
Claim 15
Dependent Claim
44 words
A method of operating a read only memory cell array in accordance with claim 10 wherein said bank select transistors are connected to energize a first set of transistor cells and a second set of transistor cells, when said bank select transistors are energized.
Claim 16
Dependent Claim
25 words
A method of operating a read only memory cell array in accordance with claim 10 wherein said buried bit lines comprise buried N+ bit lines.
Claim 17
Dependent Claim
30 words
A method of operating a read only memory cell array in accordance with claim 14 wherein said bank select transistors are connected to the column decoder of said cell array.
Claim 18
Dependent Claim
65 words
A method of operating a read only memory cell array in accordance with claim 14 wherein said select even lines which connect to the gates of FET transistors which connect to said first set of transistor cells in said array, and said select odd lines are connected to the gates of FET transistors which connect to said second set of transistor cells in said array.
Claim 19
Dependent Claim
45 words
A method of operating a read only memory cell array in accordance with claim 15 wherein said cell transistors connect to said bit lines of said first set of transistor cells and said second set of transistor cells respectively for selective energization of said cells.
Claim 20
Dependent Claim
44 words
A method of operating a read only memory cell array in accordance with claim 16 wherein said bank select transistors are connected to energize said first set of transistor cells and said second set of transistor cells, when said bank select transistors are energized.
Claim 21
Dependent Claim
25 words
A method of operating a read only memory cell array in accordance with claim 17 wherein said buried bit lines comprise buried N+ bit lines.
Claim 22
Dependent Claim
30 words
A method of operating a read only memory cell array in accordance with claim 18 wherein said bank select transistors are connected to the column decoder of said cell array.
Claim 23
Independent Claim
354 words
A method of operating a read only memory cell array comprising: an array of memory transistor cells, a plurality of word lines, a plurality of buried bit lines comprising buried N+ bit lines, a plurality of main bit lines parallel to said buried bit lines, with said main bit lines overlying alternate ones of said buried bit lines, a plurality of sets of parallel columns of said memory transistor cells in said array including a first set of columns of cells and a second column of cells, said first and second columns being in side by side parallel relationship, diffusion contacts connecting said main bit lines to a set of bank select transistors, employing a plurality of bank select lines for enabling a reading of a selected bank in said array connected to said bank select transistors in said bank, employing a select even line adapted for enabling reading of a first set of transistor cells in said first column of cells in a selected bank connected to select said first set of said transistor cells in said bank, and employing a select odd line adapted for enabling reading of a second set of transistor cells in said second column of cells next in said array to said first column of cells in a selected bank connected to select said second set of transistor cells in said array, said select even lines connecting to the gates of FET transistors which connect to said first set of transistor cells in said array, and said select odd lines connecting to the gates of FET transistors which connect to said second set of transistor cells in said array, said FET transistors connecting to said bit lines of said second set of transistor cells and said first set of transistor cells respectively, said bank select transistors connecting to energize a first set of transistor cells and a second set of transistor cells, when said bank select transistors are energized, said cell transistors connecting to said bit lines of said first set of transistor cells and said second set of transistor cells respectively for selective energization of said cells.
Claim 24
Independent Claim
354 words
A method of operating a read only memory cell array comprising: an array of memory transistor cells, a plurality of word lines, a plurality of buried bit lines comprising buried N+ bit lines, a plurality of main bit lines parallel to said buried bit lines, with said main bit lines overlying alternate ones of said buried bit lines, a plurality of sets of parallel columns of said memory transistor cells in said array including a first set of columns of cells and a second column of cells, said first and second columns being in side by side parallel relationship, diffusion contacts connecting said main bit lines to a set of bank select transistors, employing a plurality of bank select lines for enabling a reading of a selected bank in said array connected to said bank select transistors in said bank, employing a select even line adapted for enabling reading of a first set of transistor cells in said first column of cells in a selected bank connected to select said first set of said transistor cells in said bank, and employing a select odd line adapted for enabling reading of a second set of transistor cells in said second column of cells next in said array to said first column of cells in a selected bank connected to select said second set of transistor cells in said array, said select even lines connecting to the gates of FET transistors which connect to said first set of transistor cells in said array, and said select odd lines connecting to the gates of FET transistors which connect to said second set of transistor cells in said array, said FET transistors connecting to said bit lines of said second set of transistor cells and said first set of transistor cells respectively, said bank select transistors connecting to energize a first set of transistor cells and a second set of transistor cells, when said bank select transistors are energized, said cell transistors connecting to said bit lines of said first set of transistor cells and said second set of transistor cells respectively for selective energization of said cells.
Claim 25
Dependent Claim
21 words
A read only memory cell array in accordance with claim 8 wherein said bank select transistors are buried N+ FET transistors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-19 | 1999-08-21 | 2000-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-19 | 2003-08-21 | 2004-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-19 | 2007-08-21 | 2008-02-20 | $7700.00 | Window Closed / Lapsed |