Patent US5493132A successfully refreshed from Google Patents.
US5493132A
Expired / Lapsed
US
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Integrated circuit contact barrier formation with ion implant
Assignee: Philips Semiconductors Inc
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Filing: 1995-02-24
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Granted: 1996-02-20
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Expires: 2015-02-24
Abstract
Abstract A titanium-tungsten barrier layer is sputtered after active areas of a CMOS structure are exposed. An ion implant through the barrier layer and into the active areas disrupts the boundaries between the barrier layer and the underlying active areas. The implant can involve argon or, alternatively, silicon. The resulting structure is annealed. A conductor layer of an aluminum-copper alloy is deposited. An antireflection coating of TiW is deposited. The three-layer structure is then photolithographically patterned to define contacts and local interconnects. The ion implant before anneal results in less contact resistance, which is particularly critical for the barrier layer boundary with positively doped active areas.
Inventors
- 👤 Hunter B. Brugge
- 👤 Kuang-Yeh Chang
- 👤 Felix Fujishiro
- 👤 Chang-Ou Lee
- 👤 Walter D. Parmantie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:32
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10D64/025; H10P; H10P14/00; H10P14/40; H10P14/418; H10W20/032; H10W20/033; H10W20/047; H10W20/051
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
72 words
An integrated circuit structure comprising: a substrate including a doped silicon region having argon implanted therein; a transition metal disposed over and in contact with said doped silicon region so as to form a boundary therewith, said transition metal having had said argon implanted therethrough so that said boundary is disrupted; and a conductive metal disposed over and contacting said transition metal, said conductive metal being more conductive than said transition metal.
Claim 2
Dependent Claim
72 words
An integrated circuit structure comprising: a substrate including a doped silicon region having argon implanted therein; a transition metal disposed over and in contact with said doped silicon region so as to form a boundary therewith, said transition metal having had said argon implanted therethrough so that said boundary is disrupted; and a conductive metal disposed over and contacting said transition metal, said conductive metal being more conductive than said transition metal.
Claim 3
Dependent Claim
101 words
A CMOS structure comprising: a substrate including a positively doped active region and a negatively doped active region; a tungsten-bearing barrier metal layer in contact with both of said active regions so as to define respective boundaries therewith; an aluminum-bearing conductor layer over and in contact with said barrier metal layer; and a nonmetallic atomic species implanted entirely through said barrier metal layer so that some of said atomic species ends up in both of said active regions, some of said atomic species ends up in said barrier metal layer, but not in said conductor layer, and said boundaries are disrupted.
Claim 4
Dependent Claim
101 words
A CMOS structure comprising: a substrate including a positively doped active region and a negatively doped active region; a tungsten-bearing barrier metal layer in contact with both of said active regions so as to define respective boundaries therewith; an aluminum-bearing conductor layer over and in contact with said barrier metal layer; and a nonmetallic atomic species implanted entirely through said barrier metal layer so that some of said atomic species ends up in both of said active regions, some of said atomic species ends up in said barrier metal layer, but not in said conductor layer, and said boundaries are disrupted.
Claim 5
Dependent Claim
14 words
A CMOS structure as recited in claim 2 wherein said atomic species is argon.
Claim 6
Dependent Claim
14 words
A CMOS structure as recited in claim 2 wherein said atomic species is silicon.
Claim 7
Dependent Claim
25 words
A CMOS structure as recited in claim 2 wherein said barrier metal electrically connects said positively doped active region with said negatively doped active region.
Claim 8
Dependent Claim
22 words
A CMOS structure as recited in claim 2 wherein said aluminum bearing conductor layer is in contact with said barrier metal layer.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-02-19 | 1999-08-21 | 2000-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-19 | 2003-08-21 | 2004-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-19 | 2007-08-21 | 2008-02-20 | $7700.00 | Window Closed / Lapsed |