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US5492725A
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Process for chemical vapor deposition using precursor compounds containing hydropyridine ligands
Assignee: Individual
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Filing: 1994-11-23
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Granted: 1996-02-20
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Expires: 2014-11-23
Abstract
Abstract Chemical vapor deposition (CVD) is accomplished by the reaction of vapors of certain novel compounds containing ligands derived from partially hydrogenated aromatic nitrogen-containing heterocyclic compounds. For example, tetrakis(1,4-dihydropyridinato)titanium reacts at 400° C. to deposit films containing titanium metal. These films show good conformality, electrical conductivity and are suitable as a contact and adhesion layers in semiconductor microelectronics. Similar compounds containing 1,4-dihydropyridinato ligands can be used as CVD sources for a wide variety of elements, including metals, semiconductors and non-metals.
Inventors
- 👤 Roy G. Gordon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:26
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; H; H01; H01B; H01B1/00; H01B1/06; H01B1/12
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
72 words
A process for the chemical vapor deposition of metal or metal-containing material comprising: a) forming a vapor of a metal-containing compound whose molecules contain at least one bond between the metal atom and a nitrogen atom in a ligand that is derived from a partially hydrogenated aromatic, nitrogen-containing heterocyclic compound; b) heating said vapor; and c) depositing said metal or metal-containing material on a substrate or in the form of a powder.
Claim 2
Dependent Claim
72 words
A process for the chemical vapor deposition of metal or metal-containing material comprising: a) forming a vapor of a metal-containing compound whose molecules contain at least one bond between the metal atom and a nitrogen atom in a ligand that is derived from a partially hydrogenated aromatic, nitrogen-containing heterocyclic compound; b) heating said vapor; and c) depositing said metal or metal-containing material on a substrate or in the form of a powder.
Claim 3
Dependent Claim
24 words
The process of claim 1 in which the metal-containing compound contains dihydropyridinato ligands selected from the group consisting of 1,4-dihydropyridinato ligands and 1,2-dihydropyridinato ligands.
Claim 4
Dependent Claim
33 words
The process of claim 1 in which the metal is selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, aluminum, gallium, indium, tin, arsenic, antimony and bismuth.
Claim 5
Dependent Claim
10 words
The process of claim 3 wherein the metal is titanium.
Claim 6
Dependent Claim
15 words
The process of claim 1 which comprises: mixing said vapor with an inert carrier gas.
Claim 7
Dependent Claim
73 words
A process for the chemical vapor deposition of a semiconductor or semiconductor-containing material comprising: a) forming a vapor of a semiconductor-containing compound whose molecules contain at least one bond between the semiconductor atom and a nitrogen atom in a ligand that is derived from a partially hydrogenated aromatic, nitrogen,containing heterocyclic compound; b) heating said vapor; and c) depositing said semiconductor or semiconductor-containing material on a substrate or in the form of a powder.
Claim 8
Dependent Claim
73 words
A process for the chemical vapor deposition of a semiconductor or semiconductor-containing material comprising: a) forming a vapor of a semiconductor-containing compound whose molecules contain at least one bond between the semiconductor atom and a nitrogen atom in a ligand that is derived from a partially hydrogenated aromatic, nitrogen,containing heterocyclic compound; b) heating said vapor; and c) depositing said semiconductor or semiconductor-containing material on a substrate or in the form of a powder.
Claim 9
Dependent Claim
24 words
The process of claim 6 in which the semiconductor containing compound contains dihydropyridinato ligands selected from the group comprising 1,4-dihydropyridinato ligands and 1,2-dihydropyridinato ligands.
Claim 10
Dependent Claim
22 words
The process of claim 6 in which the semiconductor is selected from the group consisting of boron, silicon, germanium, selenium and tellurium.
Claim 11
Dependent Claim
15 words
The process of claim 6, which comprises: mixing said vapor with an inert carrier gas.
Claim 12
Dependent Claim
87 words
A process for the chemical vapor-deposition of a non-metal or non-metal-containing material comprising: a) forming a vapor of a non-metal-containing compound in which the non-metal is selected from the group consisting of phosphorous and sulfur and whose molecules contain at least one bond between the non-metal atom and a nitrogen atom in a ligand that is derived from a partially hydrogenated aromatic, nitrogen-containing heterocyclic compound; b) heating said vapor; and c) depositing said non-metal or non-metal-containing material on a substrate or in the form of a powder.
Claim 13
Dependent Claim
87 words
A process for the chemical vapor-deposition of a non-metal or non-metal-containing material comprising: a) forming a vapor of a non-metal-containing compound in which the non-metal is selected from the group consisting of phosphorous and sulfur and whose molecules contain at least one bond between the non-metal atom and a nitrogen atom in a ligand that is derived from a partially hydrogenated aromatic, nitrogen-containing heterocyclic compound; b) heating said vapor; and c) depositing said non-metal or non-metal-containing material on a substrate or in the form of a powder.
Claim 14
Dependent Claim
25 words
The process of claim 10 in which the non-metal containing compound contains dihydropyridinato ligands selected from the group consisting of 1,4-dihydropyridinato ligands and 1,2-dihydropyridinato ligands.
Claim 15
Dependent Claim
15 words
The process of claim 10 which comprises: mixing said vapor with an inert carrier gas.
References Cited (Backward Citations)
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