Patent US5492720A successfully refreshed from Google Patents.
US5492720A
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Method of manufacturing a magnetoresistive sensor
Assignee: International Business Machines Corp
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Filing: 1995-04-06
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Granted: 1996-02-20
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Expires: 2015-04-06
Abstract
Abstract In a magnetoresistive (MR) read sensor in which the MR layer is transversely biased by a soft magnetic layer separated from the MR layer by a nonmagnetic spacer layer an antiferromagnetic stabilization layer of NiO provides a stabilizing exchange-coupled magnetic field to the transverse bias layer insuring that the transverse bias layer is fully saturated in a preferred direction during sensor operation.
Inventors
- 👤 Hardayal S. Gill
- 👤 Tsann Lin
- 👤 Ching H. Tsang
- 👤 Albert J. Wallash
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:23
CPC Classifications
G; G11; G11B; G11B5/00; G11B5/127; G11B5/33; G11B5/39; G11B5/3903; G11B5/3906; G11B5/3929; G11B5/3932; G11B5/399
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
323 words
A method or fabricating a magnetoresistive sensor of the type having a transverse bias layer of ferromagnetic material separated from a magnetoresistive layer by a nonmagnetic spacer layer, said transverse bias layer for providing a transverse bias magnetic field in said magnetoresistive layer, and a longitudinal bias layer of an antiferromagnetic material formed in direct contact with said magnetoresistive layer for providing an exchange-coupled longitudinal bias field in said magnetoresistive layer, wherein a stabilization layer of an antiferromagnetic material is in direct contact with said transverse bias layer for inducing an exchange-coupled magnetic field in said transverse bias layer, said method comprising the steps of: depositing a stabilization layer of a first antiferromagnetic material on a substrate; depositing a transverse bias layer of a ferromagnetic material over and in contact with said stabilization layer; depositing a spacer layer of a nonmagnetic material over said transverse bias layer; depositing a layer of magnetoresistive material over said spacer layer, said magnetoresistive layer separated from said transverse bias layer by said spacer layer; depositing a longitudinal bias layer of a second antiferromagnetic material over said magnetoresistive layer and in direct contact with said magnetoresistive layer, said first and second antiferromagnetic materials having different Neel temperatures; annealing said magnetoresistive sensor at a temperature approximately equal to the higher of the Neel temperatures of said first and second antiferromagnetic materials in the presence of a magnetic field having a desired direction for setting the direction of the exchange-coupled magnetic field induced by the first or second antiferromagnetic material associated with the higher of the two Neel temperatures; and annealing said magnetoresistive sensor at a temperature approximately equal to the lower of the Neel temperatures of said first and second antiferromagnetic materials in the presence of a magnetic field having a desired direction for setting the direction of the exchange-coupled magnetic field induced by the first or second antiferromagnetic material associated with the lower of the two Neel temperatures.
Claim 2
Independent Claim
323 words
A method or fabricating a magnetoresistive sensor of the type having a transverse bias layer of ferromagnetic material separated from a magnetoresistive layer by a nonmagnetic spacer layer, said transverse bias layer for providing a transverse bias magnetic field in said magnetoresistive layer, and a longitudinal bias layer of an antiferromagnetic material formed in direct contact with said magnetoresistive layer for providing an exchange-coupled longitudinal bias field in said magnetoresistive layer, wherein a stabilization layer of an antiferromagnetic material is in direct contact with said transverse bias layer for inducing an exchange-coupled magnetic field in said transverse bias layer, said method comprising the steps of: depositing a stabilization layer of a first antiferromagnetic material on a substrate; depositing a transverse bias layer of a ferromagnetic material over and in contact with said stabilization layer; depositing a spacer layer of a nonmagnetic material over said transverse bias layer; depositing a layer of magnetoresistive material over said spacer layer, said magnetoresistive layer separated from said transverse bias layer by said spacer layer; depositing a longitudinal bias layer of a second antiferromagnetic material over said magnetoresistive layer and in direct contact with said magnetoresistive layer, said first and second antiferromagnetic materials having different Neel temperatures; annealing said magnetoresistive sensor at a temperature approximately equal to the higher of the Neel temperatures of said first and second antiferromagnetic materials in the presence of a magnetic field having a desired direction for setting the direction of the exchange-coupled magnetic field induced by the first or second antiferromagnetic material associated with the higher of the two Neel temperatures; and annealing said magnetoresistive sensor at a temperature approximately equal to the lower of the Neel temperatures of said first and second antiferromagnetic materials in the presence of a magnetic field having a desired direction for setting the direction of the exchange-coupled magnetic field induced by the first or second antiferromagnetic material associated with the lower of the two Neel temperatures.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said first antiferromagnetic material has a lower Neel temperature than said second antiferromagnetic material.
Claim 4
Dependent Claim
23 words
The method of claim 2 wherein said first antiferromagnetic material comprises nickel oxide and said second antiferromagnetic material is an alloy of manganese.
Claim 5
Dependent Claim
20 words
The method of claim 3 wherein said second antiferromagnetic material is selected from the group consisting of nickel-manganese and manganese-iron.
Claim 6
Dependent Claim
34 words
The method of claim 1 further comprising the additional step of first depositing a heat sink layer on said substrate, said stabilization layer being deposited over and in contact with said heat sink layer.
Claim 7
Dependent Claim
12 words
The method of claim 5 wherein said head sink layer comprises tantalum.
Claim 8
Dependent Claim
31 words
The method of claim 1 wherein said first antiferromagnetic material comprises a dielectric antiferromagnetic material having a low Neel temperature when compared to the Neel temperature of said second antiferromagnetic material.
Claim 9
Independent Claim
319 words
A method for fabricating a magnetoresistive sensor of the type having a transverse bias layer of ferromagnetic material separated from magnetoresistive layer by a nonmagnetic spacer layer formed in a central region of said magnetoresistive sensor, said transverse bias layer for providing a transverse bias magnetic field in said magnetoresistive layer, and a longitudinal bias layer of a high coercivity material formed in end regions of said magnetoresistive sensor, said end regions separated by said central region, said longitudinal bias layer for providing a longitudinal bias field in said magnetoresistive layer, wherein a stabilization layer of an antiferromagnetic material is in direct contact with said transverse bias layer for inducing an exchange-coupled magnetic field in said transverse bias layer, said method comprising the steps of: depositing a stabilization layer of an antiferromagnetic material on a substrate; depositing a transverse bias layer of a ferromagnetic material over and in contact with said stabilization layer; depositing a spacer layer of a nonmagnetic material over said transverse bias layer; depositing a layer of magnetoresistive material over said spacer layer, said magnetoresistive layer separated from said transverse bias layer by said spacer layer; patterning said transverse bias layer, said spacer layer and said magnetoresistive layer to extend over only said central region; depositing a longitudinal bias layer of a high coercivity material in said end regions of said magnetoresistive sensor for providing a longitudinal bias field in said magnetoresistive layer; saturating said longitudinal bias layer with an externally applied magnetic field having a desired direction with respect to the longitudinal axis of said magnetoresistive layer for setting the magnetic field direction of said longitudinal bias layer; and annealing said magnetoresistive sensor at a temperature approximately equal to the Neel temperature of antiferromagnetic material in the presence of a magnetic field having a desired direction for setting the direction of the exchange-coupled magnetic field induced in the transverse bias layer by said stabilization layer.
Claim 10
Independent Claim
319 words
A method for fabricating a magnetoresistive sensor of the type having a transverse bias layer of ferromagnetic material separated from magnetoresistive layer by a nonmagnetic spacer layer formed in a central region of said magnetoresistive sensor, said transverse bias layer for providing a transverse bias magnetic field in said magnetoresistive layer, and a longitudinal bias layer of a high coercivity material formed in end regions of said magnetoresistive sensor, said end regions separated by said central region, said longitudinal bias layer for providing a longitudinal bias field in said magnetoresistive layer, wherein a stabilization layer of an antiferromagnetic material is in direct contact with said transverse bias layer for inducing an exchange-coupled magnetic field in said transverse bias layer, said method comprising the steps of: depositing a stabilization layer of an antiferromagnetic material on a substrate; depositing a transverse bias layer of a ferromagnetic material over and in contact with said stabilization layer; depositing a spacer layer of a nonmagnetic material over said transverse bias layer; depositing a layer of magnetoresistive material over said spacer layer, said magnetoresistive layer separated from said transverse bias layer by said spacer layer; patterning said transverse bias layer, said spacer layer and said magnetoresistive layer to extend over only said central region; depositing a longitudinal bias layer of a high coercivity material in said end regions of said magnetoresistive sensor for providing a longitudinal bias field in said magnetoresistive layer; saturating said longitudinal bias layer with an externally applied magnetic field having a desired direction with respect to the longitudinal axis of said magnetoresistive layer for setting the magnetic field direction of said longitudinal bias layer; and annealing said magnetoresistive sensor at a temperature approximately equal to the Neel temperature of antiferromagnetic material in the presence of a magnetic field having a desired direction for setting the direction of the exchange-coupled magnetic field induced in the transverse bias layer by said stabilization layer.
Claim 11
Dependent Claim
14 words
The method of claim 8 wherein said antiferromagnetic material comprises a dielectric antiferromagnetic material.
Claim 12
Dependent Claim
11 words
The method of claim 8 wherein said antiferromagnetic material comprises nickel-oxide.
Claim 13
Dependent Claim
21 words
The method of claim 8 wherein said high coercivity material is selected from the group consisting of cobalt-platinum-chromium, cobalt-nickel-chromium and cobalt-chromium.
Claim 14
Dependent Claim
23 words
The method of claim 8 wherein said transverse bias layer comprises a material selected from the group consisting of nickel-iron-niobium, nickel-iron-rhodium and nickel-iron-chromium.
Claim 15
Dependent Claim
40 words
The method of claim 8 wherein said stabilization layer extends over said end regions and said central region of said magnetoresistive sensor, said longitudinal bias layer being deposited on said stabilization layer in said end regions of said magnetoresistive sensor.
Claim 16
Dependent Claim
34 words
The method of claim 8 further comprising the additional steps of first depositing a heat sink layer on said substrate, said stabilization layer being deposited over and in contact with said heat sink layer.
Claim 17
Dependent Claim
12 words
The method of claim 14 wherein said head sink layer comprises tantalum.
References Cited (Backward Citations)
US4663685A
Cited
EP0631276A2
Cited
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