Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
183 words
An integrated light emitting device and photodetecting device comprising: an active region including a light generation region for generating light in response to light passing therethrough, the active region having a first side and a second opposite side, the light generation region emitting light in a first direction through a first surface; a second mirror region having a first side and a second opposite side, the second mirror region for reflecting light towards the light generation region, the second mirror region being located on the first side of the active region; a first mirror region having a first side and a second opposite side, the first mirror region for reflecting light towards the light generation region, the first side of the first mirror region being located on the second side of the active region; a substrate having a first side and a second opposite side, the first side of the substrate being located on the second side of the first mirror region; and a Schottky contact for detecting light emitted in the first direction, the Schottky contact being formed on the first surface.
Claim 2
Dependent Claim
183 words
An integrated light emitting device and photodetecting device comprising: an active region including a light generation region for generating light in response to light passing therethrough, the active region having a first side and a second opposite side, the light generation region emitting light in a first direction through a first surface; a second mirror region having a first side and a second opposite side, the second mirror region for reflecting light towards the light generation region, the second mirror region being located on the first side of the active region; a first mirror region having a first side and a second opposite side, the first mirror region for reflecting light towards the light generation region, the first side of the first mirror region being located on the second side of the active region; a substrate having a first side and a second opposite side, the first side of the substrate being located on the second side of the first mirror region; and a Schottky contact for detecting light emitted in the first direction, the Schottky contact being formed on the first surface.
Claim 3
Dependent Claim
34 words
The integrated light emitting device and photodetecting device recited in claim 1, wherein the Schottky barrier of the Schottky contact is less than the photon energy of the light emitted in the first direction.
Claim 4
Dependent Claim
25 words
The integrated light emitting device and photodetecting device recited in claim 1 wherein the first surface is the second side of the second mirror region.
Claim 5
Dependent Claim
23 words
The integrated light emitting device and photodetecting device recited in claim 1 wherein the first surface is the second side of the substrate.
Claim 6
Dependent Claim
36 words
The integrated light emitting device and photodetecting device recited in claim 1 wherein the Schottky contact is comprised of a metal, the metal being at least partially transparent to the light emitted in the first direction.
Claim 7
Dependent Claim
50 words
The integrated light emitting device and photodetecting device recited in claim 1 further including a first ohmic contact formed on the first surface, wherein the Schottky contact is comprised of a metal, wherein the sidewall of the first ohmic contact does not extend past the sidewall of the Schottky contact.
Claim 8
Dependent Claim
28 words
The integrated light emitting device and photodetecting device recited in claim 6 wherein the first ohmic contact and the Schottky contact are separated by a first dielectric layer.
Claim 9
Dependent Claim
68 words
The integrated light emitting device and photodetecting device recited in claim 6, the first ohmic contact having a first sidewall, the Schottky contact including a first region generally parallel to the first surface and a second region generally orthogonal to the first surface, the second region of the Schottky contact region extending past the first sidewall of the first ohmic contact to make contact with the first surface.
Claim 10
Dependent Claim
31 words
The integrated light emitting device and photodetecting device recited in claim 6 further including an absorption layer formed on the first surface, the absorption layer being positioned underneath the Schottky contact.
Claim 11
Dependent Claim
49 words
The integrated light emitting device and photodetecting device recited in claim 1 further including a first ohmic contact formed on the first surface, wherein the first ohmic contact is biased to forward biased the light emitting device and the Schottky contact is biased to reverse bias the photodetecting device.
Claim 12
Independent Claim
191 words
A method of forming an integrated light emitting device and photodetecting device comprising the steps of: forming a first mirror region on a substrate having a first side and a second opposite side, the first mirror region having a first and second opposite side, the first mirror region for reflecting light towards a light generation region, wherein the second side of the first mirror region is located on the first side of the substrate; forming an active region including the light generation region for generating light in response to light passing therethrough, the light generation region for emitting light in a first direction through a first surface, the active region having a first side and a second opposite side, wherein the second side of the active region is located on the first side of the first mirror region; forming a second mirror region, having a first side and a second opposite side, the second mirror region for reflecting light towards the light generation region, the first side of the second mirror region being located on the first side of the active region; and forming a Schottky contact on the first surface.
Claim 13
Independent Claim
191 words
A method of forming an integrated light emitting device and photodetecting device comprising the steps of: forming a first mirror region on a substrate having a first side and a second opposite side, the first mirror region having a first and second opposite side, the first mirror region for reflecting light towards a light generation region, wherein the second side of the first mirror region is located on the first side of the substrate; forming an active region including the light generation region for generating light in response to light passing therethrough, the light generation region for emitting light in a first direction through a first surface, the active region having a first side and a second opposite side, wherein the second side of the active region is located on the first side of the first mirror region; forming a second mirror region, having a first side and a second opposite side, the second mirror region for reflecting light towards the light generation region, the first side of the second mirror region being located on the first side of the active region; and forming a Schottky contact on the first surface.
Claim 14
Dependent Claim
27 words
The method recited in claim 11 where Schottky barrier of the Schottky contact is less than the photon energy of the light emitted in the first direction.
Claim 15
Dependent Claim
19 words
The method recited in claim 11 wherein the first surface is the second side of the second mirror region.
Claim 16
Dependent Claim
17 words
The method recited in claim 11 wherein the first surface is the second side of the substrate.
Claim 17
Dependent Claim
30 words
The method recited in claim 11 wherein the Schottky contact is comprised of a metal, the metal being at least partially transparent to the light emitted in the first direction.
Claim 18
Dependent Claim
20 words
The method recited in claim 11 further including the step of forming a first ohmic contact on the first surface.
Claim 19
Dependent Claim
22 words
The method recited in claim 11 including the step of forming an absorption layer between the first surface and the Schottky contact.
Claim 20
Dependent Claim
24 words
The method recited in claim 16 further including the step of forming a dielectric region between the first ohmic contact and the Schottky contact.