Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
78 words
A process monitor for a CMOS integrated circuit, comprising: a ring oscillator that is fabricated integrally with the integrated circuit and includes PMOS circuit elements and NMOS circuit elements; and a processor for sensing pulses generated by the ring oscillator and computing a process factor for the integrated circuit as a predetermined function of a parameter of said sensed pulses that varies in accordance with relative electrical characteristics of the PMOS circuit elements and the NMOS circuit elements.
Claim 2
Dependent Claim
78 words
A process monitor for a CMOS integrated circuit, comprising: a ring oscillator that is fabricated integrally with the integrated circuit and includes PMOS circuit elements and NMOS circuit elements; and a processor for sensing pulses generated by the ring oscillator and computing a process factor for the integrated circuit as a predetermined function of a parameter of said sensed pulses that varies in accordance with relative electrical characteristics of the PMOS circuit elements and the NMOS circuit elements.
Claim 3
Dependent Claim
23 words
A process monitor as in claim 1, in which the processor computes said process factor in accordance with a frequency of said pulses.
Claim 4
Dependent Claim
39 words
A process monitor as in claim 1, in which the processor senses said pulses at different points in the ring oscillator and computes said process factor in accordance with a delay between edges of said pulses at said points.
Claim 5
Dependent Claim
43 words
A process monitor as in claim 3, in which the processor computes said process factor as comprising a ratio of a delay between rising edges of said pulses at said points and a delay between falling edges of said pulses at said points.
Claim 6
Dependent Claim
57 words
A process monitor as in claim 1, in which: the ring oscillator comprises first and second delay units that are interconnected in a ring; and the processor senses said pulses at outputs of the first and second delay units and computes said process factor in accordance with a delay between edges of said pulses at said outputs.
Claim 7
Dependent Claim
22 words
A process monitor as in claim 5, in which the processor comprises an exclusive-OR unit having inputs connected to said outputs respectively.
Claim 8
Dependent Claim
43 words
A process monitor as in claim 5, in which the processor computes said process factor as comprising a ratio of a delay between rising edges of said pulses at said outputs and a delay between falling edges of said pulses at said outputs.
Claim 9
Dependent Claim
64 words
A process monitor as in claim 7, in which: the first delay unit imparts a rising edge delay to said pulses that is relatively sensitive to variations in said electrical characteristics of the PMOS circuit elements; and the second delay unit imparts a rising edge delay to said pulses that is relatively insensitive to variations in said electrical characteristics of the PMOS circuit elements.
Claim 10
Dependent Claim
23 words
A process monitor as in claim 8, in which the first delay unit comprises delays said rising edges more than said falling edges.
Claim 11
Dependent Claim
64 words
A process monitor as in claim 7, in which: the second delay unit imparts a falling edge delay to said pulses that is relatively sensitive to variations in said electrical characteristics of the NMOS circuit elements; and the first delay unit imparts a falling edge delay to said pulses that is relatively insensitive to variations in said electrical characteristics of the NMOS circuit elements.
Claim 12
Dependent Claim
22 words
A process monitor as in claim 10, in which the second delay unit delays said falling edges more than said rising edges.
Claim 13
Independent Claim
81 words
A method of determining a process factor for a CMOS integrated circuit, comprising the steps of: (a) providing a ring oscillator that is fabricated integrally with the integrated circuit and includes PMOS circuit elements and NMOS circuit elements; (b) sensing pulses generated by the ring oscillator; and (c) computing said process factor as a predetermined function of a parameter of said sensed pulses that varies in accordance with relative electrical characteristics of the PMOS circuit elements and the NMOS circuit elements.
Claim 14
Independent Claim
81 words
A method of determining a process factor for a CMOS integrated circuit, comprising the steps of: (a) providing a ring oscillator that is fabricated integrally with the integrated circuit and includes PMOS circuit elements and NMOS circuit elements; (b) sensing pulses generated by the ring oscillator; and (c) computing said process factor as a predetermined function of a parameter of said sensed pulses that varies in accordance with relative electrical characteristics of the PMOS circuit elements and the NMOS circuit elements.
Claim 15
Dependent Claim
25 words
A method as in claim 12, in which step (c) comprises computing said process factor as a predetermined function of a frequency of said pulses.
Claim 16
Dependent Claim
44 words
A method as in claim 12, in which: step (b) comprises sensing said pulses at different points in the ring oscillator; and step (c) comprises computing said process factor as a predetermined function of a delay between edges of said pulses at said points.
Claim 17
Dependent Claim
43 words
A method as in claim 14, in which step (c) comprises computing said process factor as comprising a ratio of a delay between rising edges of said pulses at said points and a delay between falling edges of said pulses at said points.
Claim 18
Dependent Claim
66 words
A method as in claim 12, in which: step (a) comprises providing the ring oscillator as comprising first and second delay units that are interconnected in a ring; step (b) comprises sensing said pulses at outputs of the first and second delay units; and step (c) comprises computing said process factor as a predetermined function of a delay between edges of said pulses at said outputs.
Claim 19
Dependent Claim
18 words
A method as in claim 16, in which step (c) comprises performing an exclusive-OR operation on said pulses.
Claim 20
Dependent Claim
43 words
A method as in claim 16, in which step (c) comprises computing said process factor as comprising a ratio of a delay between rising edges of said pulses at said outputs and a delay between falling edges of said pulses at said outputs.
Claim 21
Dependent Claim
97 words
A CMOS integrated circuit, comprising: a semiconductor substrate; a plurality of CMOS circuit elements formed on the substrate; and a process monitor formed on the substrate, including: a ring oscillator that is fabricated integrally with the CMOS circuit elements and includes PMOS circuit elements and NMOS circuit elements; and a processor for sensing pulses generated by the ring oscillator and computing a process factor for the integrated circuit as a predetermined function of a parameter of said sensed pulses that varies in accordance with relative electrical characteristics of the PMOS circuit elements and the NMOS circuit elements.
Claim 22
Dependent Claim
97 words
A CMOS integrated circuit, comprising: a semiconductor substrate; a plurality of CMOS circuit elements formed on the substrate; and a process monitor formed on the substrate, including: a ring oscillator that is fabricated integrally with the CMOS circuit elements and includes PMOS circuit elements and NMOS circuit elements; and a processor for sensing pulses generated by the ring oscillator and computing a process factor for the integrated circuit as a predetermined function of a parameter of said sensed pulses that varies in accordance with relative electrical characteristics of the PMOS circuit elements and the NMOS circuit elements.
Claim 23
Dependent Claim
23 words
An integrated circuit as in claim 19, in which the processor computes said process factor in accordance with a frequency of said pulses.
Claim 24
Dependent Claim
39 words
An integrated circuit as in claim 19, in which the processor senses said pulses at different points in the ring oscillator and computes said process factor in accordance with a delay between edges of said pulses at said points.
Claim 25
Dependent Claim
43 words
An integrated circuit as in claim 21, in which the processor computes said process factor as comprising a ratio of a delay between rising edges of said pulses at said points and a delay between falling edges of said pulses at said points.
Claim 26
Dependent Claim
57 words
An integrated circuit as in claim 19, in which: the ring oscillator comprises first and second delay units that are interconnected in a ring; and the processor senses said pulses at outputs of the first and second delay units arid computes said process factor in accordance with a delay between edges of said pulses at said outputs.
Claim 27
Dependent Claim
22 words
An integrated circuit as in claim 23, in which the processor comprises an exclusive-OR unit having inputs connected to said outputs respectively.
Claim 28
Dependent Claim
43 words
An integrated circuit as in claim 23, in which the processor computes said process factor as comprising a ratio of a delay between rising edges of said pulses at said outputs and a delay between falling edges of said pulses at said outputs.
Claim 29
Dependent Claim
64 words
An integrated circuit as in claim 25, in which: the first delay unit imparts a rising edge delay to said pulses that is relatively sensitive to variations in said electrical characteristics of the PMOS circuit elements; and the second delay unit imparts a rising edge delay to said pulses that is relatively insensitive to variations in said electrical characteristics of the PMOS circuit elements.
Claim 30
Dependent Claim
22 words
An integrated circuit as in claim 26, in which the first delay unit delays said rising edges more than said falling edges.
Claim 31
Dependent Claim
65 words
An integrated circuit as in claim 27, in which: the second delay unit imparts a falling edge delay to said pulses that is relatively sensitive to variations in said electrical characteristics of the NMOS circuit elements; and the first delay unit imparts a falling edge delay to said pulses that is relatively in insensitive to variations in said electrical characteristics of the NMOS circuit elements.
Claim 32
Dependent Claim
22 words
An integrated circuit as in claim 28, in which the second delay unit delays said falling edges more than said rising edges.