US5486277A
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High performance capacitors using nano-structure multilayer materials fabrication
Assignee: Lawrence Livermore National Security LLC
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Filing: 1995-02-06
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Granted: 1996-01-23
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Expires: 2015-02-06
Abstract
Abstract A high performance capacitor fabricated from nano-structure multilayer materials, such as by controlled, reactive sputtering, and having very high energy-density, high specific energy and high voltage breakdown. The multilayer capacitors, for example, may be fabricated in a "notepad" configuration composed of 200-300 alternating layers of conductive and dielectric materials so as to have a thickness of 1 mm, width of 200 mm, and length of 300 mm, with terminals at each end of the layers suitable for brazing, thereby guaranteeing low contact resistance and high durability. The "notepad" capacitors may be stacked in single or multiple rows (series-parallel banks) to increase the voltage and energy density.
Inventors
- 👤 Troy W. Barbee, Jr.
- 👤 Gary W. Johnson
- 👤 Dennis W. O'Brien
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 11:26
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/30; H01G4/306; C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/04; C23C14/042; C23C14/06; C23C14/14; C23C14/18; C23C14/185
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
100 words
A method for fabricating nano-structure multilayer capacitors, comprising: depositing at least one layer of conductive material by magnetron sputtering in an inert atmosphere; masking selected areas of the thus deposited layer of conductive material; depositing a layer of dielectric material on at least the unmasked areas of the conductive material; removing the maskant; depositing by magnetron sputtering at least another layer of conductive material on at least the dielectric material; masking selected areas of the thus deposited layer of conductive material; depositing a layer of dielectric material on at least unmasked areas of the conductive material; and removing the maskant.
Claim 2
Independent Claim
100 words
A method for fabricating nano-structure multilayer capacitors, comprising: depositing at least one layer of conductive material by magnetron sputtering in an inert atmosphere; masking selected areas of the thus deposited layer of conductive material; depositing a layer of dielectric material on at least the unmasked areas of the conductive material; removing the maskant; depositing by magnetron sputtering at least another layer of conductive material on at least the dielectric material; masking selected areas of the thus deposited layer of conductive material; depositing a layer of dielectric material on at least unmasked areas of the conductive material; and removing the maskant.
Claim 3
Dependent Claim
23 words
The method of claim 1, wherein the at least one layer of conductive material is deposited by magnetron sputtering of a cooper target.
Claim 4
Dependent Claim
18 words
The method of claim 1, wherein the magnetron sputtering is carried out in a 2 mTorr argon atmosphere.
Claim 5
Dependent Claim
27 words
The method of claim 1, wherein the magnetron sputtering is carried out using DC power, 600 watts, operating voltage of 700-750 V, and current of 0.9 amps.
Claim 6
Dependent Claim
31 words
The method of claim 1, wherein the at least one layer of conductive material is deposited at a rate greater than 30 Å per second, and a thickness of 0.1-0.2 μm.
Claim 7
Dependent Claim
48 words
The method of claim 1, wherein the depositing of the at least one layer of conductive material is carried out using a deposition time of 30-70 seconds, and wherein the layer of conductive material is deposited on a substrate maintained at a temperature of 40°-50° C. during processing.
Claim 8
Dependent Claim
26 words
The method of claim 1, wherein masking selected areas of the thus deposited layer of conductive material is carried of using nickle alloy as the maskant.
Claim 9
Dependent Claim
22 words
The method of claim 1, wherein depositing the layer of dielectric material is carried out using an argon atmosphere at 3-4 mTorr.
Claim 10
Dependent Claim
28 words
The method of claim 1, wherein the layer of dielectric material is selected from the group consisting of SiO 2 , ZrO 2 , and TiO 2 .
Claim 11
Dependent Claim
49 words
The method of claim 1, where the layer of dielectric material is composed of silicon dioxide and is deposited by reactive magnetron sputtering on the non-masked areas of the conductive material in a reactive gas, at a deposition rate of 8 Å/sec. and to a thickness of 0.5 μm.
Claim 12
Dependent Claim
16 words
The method of claim 10, wherein the reactive gas is O 2 , at 0.5-1.0 mTorr.
Claim 13
Dependent Claim
39 words
The method of claim 1, wherein the at least one layer of conductive material is deposited on a thin uniform float glass substrate with roughness of less than 1/20 of the thickness of the thinnest layer of conductive material.
Claim 14
Dependent Claim
19 words
The method of claim 1, wherein the at least one layer of conductive material is formed of multiple sublayers.
Claim 15
Dependent Claim
34 words
The method of claim 1, wherein the layers of conductive material are selected from the group composed of layers of different material, layers of similar material, and alternating layers of similar and different materials.
Claim 16
Dependent Claim
24 words
The method of claim 1, wherein, the layers of conductive material are deposited so as to form a continuous taper along the length thereof.
Claim 17
Dependent Claim
22 words
The method of claim 15, wherein each layer of conductive material is formed so as to be connected to a conductive member.
Claim 18
Dependent Claim
22 words
The method of claim 16, wherein alternate layers of conductive material are formed so as to be connected to different conductive members.
Claim 19
Dependent Claim
18 words
The method of claim 17, wherein the layers of dielectric material are formed so as to be interconnected.
Claim 20
Dependent Claim
25 words
The method of claim 1, additionally including positioning and interconnecting the thus fabricated nano-structure multilayer capacitors so as to form a bank of such capacitors.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-01-22 | 1999-07-24 | 2000-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-01-22 | 2003-07-24 | 2004-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-01-22 | 2007-07-24 | 2008-01-23 | $7700.00 | Window Closed / Lapsed |