← Back to Patent Explorer
US5203977A Expired / Lapsed US ⏱️ 0.0 years remaining

Magnetron sputtered boron films and TI/B multilayer structures

Assignee: University of California
•
Filing: 1991-03-11
•
Granted: 1993-04-20
•
Expires: 2011-03-11
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

Inventors

  • 👤 Daniel M. Makowiecki
  • 👤 Alan F. Jankowski

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-09 11:59
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/06; C23C14/0635; B; B82; B82Y; B82Y10/00; C23C14/0641; C23C14/0647; C23C14/14; C23C14/18; C23C14/185; C23C14/22; C23C14/34; C23C14/3407; C23C14/3414; G; G21; G21K; G21K1/00; G21K1/06; G21K1/062; G21K2201/00; G21K2201/06; G21K2201/061; G21K2201/067; Y; Y10; Y10T; Y10T428/00; Y10T428/26; Y10T428/263; Y10T428/264; Y10T428/265; Y10T428/31504; Y10T428/31678

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 44 words
A method for forming thin amorphous boron films which have no morphological growth features; comprising: subjecting a boron target having a density near theoretical density to an rf magnetron sputtering process; and depositing a thin amorphous film of sputtered boron on a substrate material.
Claim 2
Independent Claim 44 words
A method for forming thin amorphous boron films which have no morphological growth features; comprising: subjecting a boron target having a density near theoretical density to an rf magnetron sputtering process; and depositing a thin amorphous film of sputtered boron on a substrate material.
Claim 3
Dependent Claim 15 words
A method as in claim 1, wherein said boron target is high density crystalline boron.
Claim 4
Dependent Claim 24 words
A method as in claim 2, wherein said boron target is high density crystalline rhombohedral boron having a bulk density greater than 2.22 g/cc.
Claim 5
Dependent Claim 24 words
A method as in claim 3, wherein said boron target is high density crystalline rhombohedral boron having a bulk density of about 2.34 g/cc.
Claim 6
Independent Claim 64 words
A method for forming thin amorphous boron multilayer structures, comprising: subjecting a boron target having a density near theoretical density to an rf magnetron sputtering process; depositing a thin amorphous film of sputtered boron on a substrate material; subjecting a second target material to a magnetron sputtering process; and depositing a thin layer of sputtered second target material on said thin amorphous boron film.
Claim 7
Independent Claim 64 words
A method for forming thin amorphous boron multilayer structures, comprising: subjecting a boron target having a density near theoretical density to an rf magnetron sputtering process; depositing a thin amorphous film of sputtered boron on a substrate material; subjecting a second target material to a magnetron sputtering process; and depositing a thin layer of sputtered second target material on said thin amorphous boron film.
Claim 8
Dependent Claim 18 words
The method as in claim 5, wherein said second target material is high-absorbing high atomic number metal material.
Claim 9
Dependent Claim 26 words
The method as in claim 6, wherein said second target material is selected from the group consisting of titanium, transition metals, refractory metals, and noble metals.
Claim 10
Dependent Claim 13 words
The method as in claim 7, wherein said second target material is titanium.

References Cited (Backward Citations)

US4177474A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-04-19 1996-10-19 1997-04-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-04-19 2000-10-19 2001-04-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-04-19 2004-10-19 2005-04-20 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag